|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
NXP Semiconductors AFT27S006NT1
- AFT27S006NT1
- NXP Semiconductors
-
1:
¥191.0717
-
1,248库存量
-
寿命结束
|
Mouser 零件编号
841-AFT27S006NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
|
|
1,248库存量
|
|
|
¥191.0717
|
|
|
¥142.6964
|
|
|
¥132.4473
|
|
|
¥127.7578
|
|
|
查看
|
|
|
¥99.3609
|
|
|
¥123.4977
|
|
|
¥120.119
|
|
|
¥116.9889
|
|
|
¥99.3609
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
|
65 V
|
728 MHz to 3.7 GHz
|
16 dB
|
28.8 dBm
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5W
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,081.51
-
28库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
28库存量
|
|
|
¥3,081.51
|
|
|
¥2,682.0663
|
|
|
¥2,576.1175
|
|
|
¥2,509.3119
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
36 A
|
133 V
|
1.8 MHz to 500 MHz
|
23 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
- MRFX1K80NR5
- NXP Semiconductors
-
1:
¥3,067.0799
-
53库存量
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS 1800W CW 1.8-400MHz
|
|
53库存量
|
|
|
¥3,067.0799
|
|
|
¥2,647.1493
|
|
|
¥2,531.2904
|
|
|
¥2,449.0377
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
24.4 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
OM-1230-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥46.9063
-
22,475库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
22,475库存量
|
|
|
¥46.9063
|
|
|
¥30.5778
|
|
|
¥26.8375
|
|
|
¥25.3572
|
|
|
¥18.8484
|
|
|
查看
|
|
|
¥23.9673
|
|
|
¥21.7977
|
|
|
¥20.0688
|
|
|
¥18.4077
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
4 A
|
30 V
|
136 MHz to 941 MHz
|
20.9 dB
|
4.9 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
SOT-89-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
- MRFE6VP61K25HR5
- NXP Semiconductors
-
1:
¥3,782.7428
-
138库存量
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP61K25HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230H
|
|
138库存量
|
|
|
¥3,782.7428
|
|
|
¥3,269.9714
|
|
|
¥3,142.1232
|
|
|
¥3,064.7408
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 600 MHz
|
24 dB
|
1.25 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥386.0532
-
413库存量
-
1,750预期 2026/7/15
-
寿命结束
|
Mouser 零件编号
771-MRF101AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
413库存量
1,750预期 2026/7/15
|
|
|
¥386.0532
|
|
|
¥315.4395
|
|
|
¥307.4617
|
|
|
¥276.0138
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,646.736
-
357库存量
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
|
|
357库存量
|
|
|
¥3,646.736
|
|
|
¥3,160.6213
|
|
|
¥3,039.2028
|
|
|
¥2,965.9901
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
1.8 MHz to 400 MHz
|
25.1 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
- AFM907NT1
- NXP Semiconductors
-
1:
¥56.8955
-
10,000库存量
-
7,000在途量
-
寿命结束
|
Mouser 零件编号
841-AFM907NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
|
|
10,000库存量
7,000在途量
|
|
|
¥56.8955
|
|
|
¥37.2561
|
|
|
¥31.6061
|
|
|
¥29.3574
|
|
|
¥23.278
|
|
|
查看
|
|
|
¥27.4477
|
|
|
¥25.7979
|
|
|
¥24.408
|
|
|
¥22.7582
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15 dB
|
8 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
DFN-16
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥539.688
-
523库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
|
|
523库存量
|
|
|
¥539.688
|
|
|
¥374.934
|
|
|
¥374.8549
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WB-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥205.4114
-
2,108库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
2,108库存量
|
|
|
¥205.4114
|
|
|
¥164.415
|
|
|
¥152.5161
|
|
|
¥147.126
|
|
|
查看
|
|
|
¥134.6169
|
|
|
¥142.1766
|
|
|
¥138.2668
|
|
|
¥134.6169
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031NR1
- NXP Semiconductors
-
1:
¥209.8297
-
988库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
988库存量
|
|
|
¥209.8297
|
|
|
¥167.9745
|
|
|
¥155.8157
|
|
|
¥150.3465
|
|
|
查看
|
|
|
¥137.5775
|
|
|
¥145.2954
|
|
|
¥141.3178
|
|
|
¥137.5775
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
- MRF1K50HR5
- NXP Semiconductors
-
1:
¥3,558.0536
-
64库存量
-
100预期 2026/10/12
-
寿命结束
|
Mouser 零件编号
841-MRF1K50HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
|
|
64库存量
100预期 2026/10/12
|
|
|
¥3,558.0536
|
|
|
¥3,081.849
|
|
|
¥2,963.0295
|
|
|
¥2,891.2971
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
36 A
|
135 V
|
1.8 MHz to 500 MHz
|
23.7 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
NI-1230H-4S
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥2,924.6547
-
270库存量
-
250预期 2026/10/12
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP6300HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
|
|
270库存量
250预期 2026/10/12
|
|
|
¥2,924.6547
|
|
|
¥2,508.3627
|
|
|
¥2,399.103
|
|
|
¥2,341.1001
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
|
130 V
|
1.8 MHz to 600 MHz
|
26.5 dB
|
300 W
|
|
+ 150 C
|
Screw Mount
|
NI-780-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥341.2374
-
288库存量
-
寿命结束
|
Mouser 零件编号
771-MHT1803B
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
288库存量
|
|
|
¥341.2374
|
|
|
¥276.8839
|
|
|
¥259.6853
|
|
|
¥255.1653
|
|
|
查看
|
|
|
¥240.8369
|
|
|
¥235.7067
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
300 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101BN
- NXP Semiconductors
-
1:
¥339.5085
-
56库存量
-
500预期 2026/10/8
-
寿命结束
|
Mouser 零件编号
771-MRF101BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
56库存量
500预期 2026/10/8
|
|
|
¥339.5085
|
|
|
¥276.1042
|
|
|
¥272.8046
|
|
|
¥250.8261
|
|
|
查看
|
|
|
¥243.0065
|
|
|
¥234.7575
|
|
最低: 1
倍数: 1
|
否
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
- AFT09MS031NR1
- NXP Semiconductors
-
1:
¥169.8051
-
215库存量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ 13.6V
|
|
215库存量
|
|
|
¥169.8051
|
|
|
¥135.4079
|
|
|
¥126.7973
|
|
|
¥123.1587
|
|
|
¥115.0001
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
- MRFE6S9060NR1
- NXP Semiconductors
-
1:
¥850.6301
-
48库存量
-
1,000预期 2026/7/21
-
寿命结束
|
Mouser 零件编号
841-MRFE6S9060NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV6E 60W TO270-2N FET
|
|
48库存量
1,000预期 2026/7/21
|
|
|
¥850.6301
|
|
|
¥710.0129
|
|
|
¥674.9264
|
|
|
¥661.9879
|
|
|
查看
|
|
|
¥606.8326
|
|
|
¥634.9809
|
|
|
¥634.721
|
|
|
¥606.8326
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
1.5 A
|
66 V
|
1 GHz
|
21.1 dB
|
14 W
|
|
+ 150 C
|
Screw Mount
|
TO-270
|
Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
-
1:
¥38.9059
-
97库存量
-
1,000预期 2026/7/23
-
寿命结束
|
Mouser 零件编号
841-AFM906NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
|
|
97库存量
1,000预期 2026/7/23
|
|
|
¥38.9059
|
|
|
¥28.928
|
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¥25.3572
|
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¥23.8882
|
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查看
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¥17.8088
|
|
|
¥22.5774
|
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¥19.888
|
|
|
¥18.6789
|
|
|
¥17.8088
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
4.7 A
|
30 V
|
136 MHz to 941 MHz
|
16.2 dB
|
6.5 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
HVSON-16
|
Reel, Cut Tape
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,542.0545
-
1库存量
-
寿命结束
|
Mouser 零件编号
841-MRF6V10010NR4
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
|
|
1库存量
|
|
|
¥1,542.0545
|
|
|
¥1,308.0767
|
|
|
¥1,246.503
|
|
|
¥1,229.9146
|
|
|
¥1,143.8312
|
|
|
查看
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报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
N-Channel
|
Si
|
|
100 V
|
960 MHz to 1.4 GHz
|
25 dB
|
10 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥760.1284
-
479预期 2026/7/20
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
479预期 2026/7/20
|
|
|
¥760.1284
|
|
|
¥637.659
|
|
|
¥567.147
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥68.1729
-
13,940在途量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
13,940在途量
在途量:
1,000 待发货
6,940 预期 2026/7/17
6,000 预期 2026/10/8
|
|
|
¥68.1729
|
|
|
¥52.3755
|
|
|
¥48.025
|
|
|
¥46.7255
|
|
|
查看
|
|
|
¥37.3465
|
|
|
¥44.1265
|
|
|
¥41.5162
|
|
|
¥39.8664
|
|
|
¥37.3465
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
1:
¥339.4181
-
239预期 2026/10/8
-
寿命结束
|
Mouser 零件编号
771-MHT1803A
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
239预期 2026/10/8
|
|
|
¥339.4181
|
|
|
¥276.1946
|
|
|
¥257.7756
|
|
|
¥234.1586
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
330 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300BN
- NXP Semiconductors
-
1:
¥759.5182
-
交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-MRF300BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
交货期 53 周
|
|
|
¥759.5182
|
|
|
¥632.8113
|
|
|
¥595.8038
|
|
|
¥562.7061
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
- A2T08VD020NT1
- NXP Semiconductors
-
1:
¥238.317
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-A2T08VD020NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
|
|
无库存交货期 53 周
|
|
|
¥238.317
|
|
|
¥156.1547
|
|
|
¥132.4473
|
|
|
¥123.0683
|
|
|
查看
|
|
|
¥97.4512
|
|
|
¥115.0001
|
|
|
¥108.2201
|
|
|
¥97.4512
|
|
|
¥97.4512
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
64 mA
|
105 V
|
728 MHz to 960 MHz
|
19.1 dB
|
2 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PQFN-24
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ13.6V
- AFT09MS031GNR1
- NXP Semiconductors
-
1:
¥273.9233
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ13.6V
|
|
无库存交货期 53 周
|
|
|
¥273.9233
|
|
|
¥221.1297
|
|
|
¥207.92
|
|
|
¥193.4221
|
|
|
¥186.5517
|
|
|
¥182.3933
|
|
最低: 1
倍数: 1
:
500
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|