|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
¥58.9747
-
3,984库存量
|
Mouser 零件编号
726-IMBG65R057M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
3,984库存量
|
|
|
¥58.9747
|
|
|
¥37.2222
|
|
|
¥32.5892
|
|
|
¥32.5892
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
¥134.1649
-
783库存量
|
Mouser 零件编号
726-IMBG65R022M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
783库存量
|
|
|
¥134.1649
|
|
|
¥94.8748
|
|
|
¥87.4281
|
|
|
¥87.2699
|
|
|
¥81.6425
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
30 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
67 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
¥48.2284
-
753库存量
|
Mouser 零件编号
726-IMBG65R107M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
753库存量
|
|
|
¥48.2284
|
|
|
¥34.4876
|
|
|
¥24.8939
|
|
|
¥24.8148
|
|
|
¥23.165
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
¥41.1885
-
739库存量
|
Mouser 零件编号
726-IMBG65R163M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
739库存量
|
|
|
¥41.1885
|
|
|
¥24.9843
|
|
|
¥19.5264
|
|
|
¥18.4416
|
|
|
¥17.3681
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R030M1HXTMA1
- Infineon Technologies
-
1:
¥95.7901
-
1,477库存量
|
Mouser 零件编号
726-IMBG65R030M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,477库存量
|
|
|
¥95.7901
|
|
|
¥64.184
|
|
|
¥56.4096
|
|
|
¥56.3305
|
|
|
¥53.4377
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
63 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
¥44.0926
-
442库存量
|
Mouser 零件编号
726-IMZA65R107M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
442库存量
|
|
|
¥44.0926
|
|
|
¥30.4422
|
|
|
¥25.2329
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R039M1HXTMA1
- Infineon Technologies
-
1:
¥69.4837
-
692库存量
|
Mouser 零件编号
726-IMBG65R039M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
692库存量
|
|
|
¥69.4837
|
|
|
¥49.7991
|
|
|
¥44.8271
|
|
|
¥44.1717
|
|
|
¥41.7761
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
51 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
¥59.6414
-
911库存量
|
Mouser 零件编号
726-IMBG65R072M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
911库存量
|
|
|
¥59.6414
|
|
|
¥37.7194
|
|
|
¥30.0241
|
|
|
¥29.1992
|
|
|
¥28.6229
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
140 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R260M1HXTMA1
- Infineon Technologies
-
1:
¥35.5724
-
817库存量
|
Mouser 零件编号
726-IMBG65R260M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
817库存量
|
|
|
¥35.5724
|
|
|
¥21.5943
|
|
|
¥16.5432
|
|
|
¥15.142
|
|
|
¥14.1476
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
346 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R083M1HXTMA1
- Infineon Technologies
-
1:
¥52.8501
-
466库存量
|
Mouser 零件编号
726-IMBG65R083M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
466库存量
|
|
|
¥52.8501
|
|
|
¥33.335
|
|
|
¥28.2048
|
|
|
¥27.5494
|
|
|
¥26.0578
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
44 nC
|
- 55 C
|
+ 175 C
|
126 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
¥71.8002
-
1,029库存量
|
Mouser 零件编号
726-IMBG65R048M1HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,029库存量
|
|
|
¥71.8002
|
|
|
¥46.4882
|
|
|
¥38.7929
|
|
|
¥38.7138
|
|
|
¥36.2278
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
45 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 175 C
|
183 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥105.2934
-
545库存量
|
Mouser 零件编号
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
545库存量
|
|
|
¥105.2934
|
|
|
¥63.7772
|
|
|
¥62.037
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R030M1HXKSA1
- Infineon Technologies
-
1:
¥97.1122
-
241库存量
-
240预期 2026/3/30
|
Mouser 零件编号
726-IMW65R030M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
241库存量
240预期 2026/3/30
|
|
|
¥97.1122
|
|
|
¥58.4775
|
|
|
¥55.8333
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R030M1HXKSA1
- Infineon Technologies
-
1:
¥98.8411
-
254库存量
-
240预期 2026/6/11
|
Mouser 零件编号
726-IMZA65R030M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
254库存量
240预期 2026/6/11
|
|
|
¥98.8411
|
|
|
¥59.551
|
|
|
¥57.1554
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
42 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
48 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R057M1HXKSA1
- Infineon Technologies
-
1:
¥61.4607
-
61库存量
|
Mouser 零件编号
726-IMW65R057M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
61库存量
|
|
|
¥61.4607
|
|
|
¥38.2166
|
|
|
¥33.4141
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
¥59.6414
-
194库存量
-
240预期 2026/4/9
|
Mouser 零件编号
726-IMW65R072M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
194库存量
240预期 2026/4/9
|
|
|
¥59.6414
|
|
|
¥34.4876
|
|
|
¥29.4478
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R083M1HXKSA1
- Infineon Technologies
-
1:
¥55.8333
-
320库存量
|
Mouser 零件编号
726-IMW65R083M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
320库存量
|
|
|
¥55.8333
|
|
|
¥32.092
|
|
|
¥29.7755
|
|
|
¥26.9618
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
111 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
19 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
¥52.4433
-
141库存量
-
240预期 2026/3/30
|
Mouser 零件编号
726-IMW65R107M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
141库存量
240预期 2026/3/30
|
|
|
¥52.4433
|
|
|
¥30.0241
|
|
|
¥24.3176
|
|
|
¥24.1481
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
¥120.6049
-
210库存量
-
720预期 2026/3/30
|
Mouser 零件编号
726-IMZA65R027M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
210库存量
720预期 2026/3/30
|
|
|
¥120.6049
|
|
|
¥76.84
|
|
|
¥66.0033
|
|
|
¥65.9242
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R039M1HXKSA1
- Infineon Technologies
-
1:
¥78.0039
-
120库存量
-
240预期 2026/3/30
|
Mouser 零件编号
726-IMZA65R039M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
120库存量
240预期 2026/3/30
|
|
|
¥78.0039
|
|
|
¥47.234
|
|
|
¥44.0926
|
|
|
¥43.1773
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥81.6425
-
138库存量
-
240预期 2026/8/13
|
Mouser 零件编号
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
138库存量
240预期 2026/8/13
|
|
|
¥81.6425
|
|
|
¥51.4489
|
|
|
¥43.0078
|
|
|
¥42.9287
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R057M1HXKSA1
- Infineon Technologies
-
1:
¥67.1672
-
132库存量
|
Mouser 零件编号
726-IMZA65R057M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
132库存量
|
|
|
¥67.1672
|
|
|
¥39.211
|
|
|
¥34.4085
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
133 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R039M1HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
1,200在途量
|
Mouser 零件编号
726-IMW65R039M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,200在途量
在途量:
720 预期 2026/5/7
480 预期 2026/6/11
|
|
|
¥84.0381
|
|
|
¥53.4377
|
|
|
¥44.9175
|
|
|
¥44.8271
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
50 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
41 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
¥73.9472
-
480预期 2026/6/16
|
Mouser 零件编号
726-IMW65R048M1HXKSA
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
480预期 2026/6/16
|
|
|
¥73.9472
|
|
|
¥43.4259
|
|
|
¥39.0415
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥60.7149
-
无库存交货期 52 周
|
Mouser 零件编号
726-IMZA65R072M1HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
|
¥60.7149
|
|
|
¥35.4029
|
|
|
¥33.5836
|
|
|
¥30.6004
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
