碳化硅MOSFET

结果: 59
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Through Hole HiP247-3 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 10 V, 22 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

AEC-Q100
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A

Through Hole N-Channel 1 Channel 1.2 kV 239 A 10.5 mOhms - 10 V, 22 V 4.4 V 304 nC - 55 C + 200 C 994 W Enhancement AEC-Q100
STMicroelectronics SCT012HU90G3AG
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A

STMicroelectronics SCT019H120G3AG
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an

AEC-Q100
STMicroelectronics SCT040H65G3-7
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package

STMicroelectronics SCT040W65G3AG
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A

AEC-Q100
STMicroelectronics SCT055H65G3-7
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package

STMicroelectronics SCT055H65G3AG
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

AEC-Q100