Tube 碳化硅MOSFET

结果: 622
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 338库存量
240在途量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 80 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 181库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 15库存量
240在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 85 A 20 mOhms - 7 V, + 23 V 5.6 V 74 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 255库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 28 A 78 mOhms - 7 V, + 23 V 5.6 V 20 nC - 55 C + 175 C 108 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 6库存量
480在途量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 172 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 483 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 25库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC

onsemi 碳化硅MOSFET SIC MOSFET 900V TO247-4L 20MOHM 2,235库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC
APC-E 碳化硅MOSFET 650V 50mR, TO-247-4L, Automotive Grade 266库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E 碳化硅MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 290库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 81A N-CH SIC 521库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 81 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-4L 40MOHM 1200V M3 1,097库存量
最低: 1
倍数: 1
最大: 20

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET RECT 1.2KV 40A RDL SIC SKY 784库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 4 V 106 nC + 175 C 262 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 641库存量
最低: 1
倍数: 1
最大: 20

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 31A N-CH SIC 503库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC + 175 C 165 W Enhancement

onsemi 碳化硅MOSFET 20MW 1200V 893库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC

IXYS 碳化硅MOSFET 1200V 80mOhm SiC MOSFET 1,158库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 39 A 80 mOhms - 5 V, + 20 V 2.8 V 95 nC - 55 C + 150 C 179 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-4L 40MOHM 1200V 1,404库存量
最低: 1
倍数: 1
最大: 30

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 160MOHM 1200V 2,422库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,104库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO247-4 3,280库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
Diodes Incorporated DMWSH120H37SM4
Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 30库存量
最低: 1
倍数: 1


onsemi 碳化硅MOSFET 60MOHM 900V 1,078库存量
最低: 1
倍数: 1
最大: 60

Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 60MOHM 244库存量
最低: 1
倍数: 1
Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement AEC-Q101 EliteSiC


Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package 1,273库存量
最低: 1
倍数: 1

Through Hole N-Channel 1 Channel 1.2 kV 127 A 14 mOhms - 10 V, + 23 V 4.2 V 110 nC - 55 C + 150 C 455 W Enhancement
SemiQ 碳化硅MOSFET 1200V, 40mOhm, TO-263-7L MOSFET 25库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 66 A 38 mOhms - 10 V, + 25 V 4 V 112 nC - 55 C + 175 C 357 W Enhancement