Infineon Technologies 1200V CoolSiC肖特基二极管
Infineon 1200V CoolSiC肖特基势垒二极管采用TO-247封装、TO-220封装和DPAK封装，其正向电流分别高达40A、20A和10A。CoolSiC二极管设计用于太阳能逆变器、UPS、3P SMPS以及能量储存与电机驱动应用。这些二极管降低了正向电压和温度依存性，从而使系统效率提升到新的水平。此外，与硅基解决方案相比，热性能的提高增加了系统可靠性，还能提高既定形状因子下的输出功率。它们结合了Si高速3 IGBT，可将Si IGBT导通损耗降低40%，同时降低电磁干扰。
Infineon Technologies Gen 5 1200V CoolSiC Schottky Diodes offer improved thermal performance compared to a silicon-based solution increasing system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.
特性
- Zero diode turn-off loss
- Improved thermal performance and lowered static losses
- 2A up to 40A rated current
- System efficiency improvement
- 30% higher output power over Si diodes solution
- High system reliability
应用
- Solar, UPS, SMPS, Storage, Motor Drives, Welding
- Micro Inverter, String Inverter, PFC Stage in UPS, Vienna Rectifier in UPS
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Block Diagram
发布日期: 2016-02-09
| 更新日期: 2024-01-10