Diotec Semiconductor Advanced Trench Technology Power MOSFETs
Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.
Features
- Small signal and power MOSFETs
- Advanced trench technology
- Logic level and standard level drive
- N- and P-channel
- Fast switching times
- Low total gate charge
- Low on-state resistance
- Single, dual, and H bridge configurations
- Enhancement mode options
- Surface mount or through-hole options
Applications
- DC/DC converters
- Power supplies
- DC drives
- Power tools
- Synchronous rectification
- Reverse polarity protection
Specifications
- 20V to 250V drain-source breakdown voltage range (VDS)
- 100mA to 280A continuous drain current range (ID)
- 1.4mΩ to 15Ω drain-source resistance range (RDS-on)
- ±12V, ±20V, and ±30V gate-source voltage options (VGS)
- 400mV to 4V gate-source threshold voltage range (VGS-th)
- 440pC to 56C gate charge range (QG)
- 200mW to 425W power dissipation range (PD)
- -55°C to 150°C/175°C operating temperature range
Videos
Additional Resource
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