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Infineon Technologies 600V 和 1200V TRENCHSTOP IGBT

Infineon 600V & 1200V TRENCHSTOP™ IGBT 结合了沟槽顶部单元和场终止概念，因此可显著提高静态和动态性能。 IGBT 和软恢复发射极控制二极管的组合进一步降低了导通损耗。 开关和传导损耗之间的折衷可获得高效率。

The Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs are offered in TO-220-3, TO-247-3, TO-252-3, and TO-263-3 packages and are Pb-free and RoHS compliant.

特性

  • Better performance: Lower switching losses, lower diode recovery losses
  • Low-speed dV/dt switching (<5V/ns), easy design
  • 5µs SC rating
  • Very low VCEsat
  • Low EMI
  • Low turn-off losses
  • Short tail current
  • Cost competitive
  • +175°C maximum junction temperature
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating
  • RoHS compliant

应用

  • Uninterruptible power supplies
  • Drives
  • Solar inverters
  • Converters with medium switching frequency

资源

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发布日期: 2016-05-23 | 更新日期: 2022-03-11