STMicroelectronics 意法半导体 650V M 系列沟槽式栅极场终止型 IGBT
意法半导体 650V M 系列沟槽式栅极场终止型 IGBT 是一款高速 IGBT，采用了先进的、具有专利的沟槽式栅极和场终止型结构。650V M 系列提供 3A-150A 最大集电极电流，适用于工作频率高达 100kHz 的应用。它们具有经优化的设计，可定制成内嵌反向并联二极管。
特性
- 6μs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10A,
- 30A (STGP30M65DF2, STGB30M65DF2, STGWA30M65DF2)
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery anti-parallel diode
应用
- Motor control
- UPS
- PFC
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View Results ( 17 ) Page
| 物料编号 | 描述 | 数据表 |
|---|---|---|
| STGYA120M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 120 A low loss |  |
| STGD6M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 6 A low loss | |
| STGP30M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 30 A low loss | |
| STGP6M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 6 A low loss | |
| STGB15M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package | |
| STGD4M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 650 V, 4 A low loss | |
| STGWA50M65DF2AG | 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT | |
| STGB30M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 30 A low loss | |
| STGW75M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 75 A low loss | |
| STGWA50M65DF2 | 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads | |
发布日期: 2015-07-02
| 更新日期: 2026-01-12