|
|
GaN 场效应晶体管 DC-3.2GHz 120W 50V SSG 17.5dB GaN
- QPD1008
- Qorvo
-
1:
¥2,796.976
-
19预期 2026/12/29
|
Mouser 零件编号
772-QPD1008
|
Qorvo
|
GaN 场效应晶体管 DC-3.2GHz 120W 50V SSG 17.5dB GaN
|
|
19预期 2026/12/29
|
|
|
¥2,796.976
|
|
|
¥2,796.185
|
|
|
¥2,144.2767
|
|
最低: 1
倍数: 1
|
|
|
|
|
射频放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB
- TGA2237
- Qorvo
-
25:
¥1,079.0483
-
50预期 2026/7/30
|
Mouser 零件编号
772-TGA2237
|
Qorvo
|
射频放大器 .03-2.5GHz 10W GaN Sm Sig. Gain 19dB
|
|
50预期 2026/7/30
|
|
最低: 25
倍数: 25
|
|
|
|
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
- NCP58920MNTWG
- onsemi
-
1:
¥78.8627
-
2,975预期 2026/8/3
-
新产品
|
Mouser 零件编号
863-NCP58920MNTWG
新产品
|
onsemi
|
栅极驱动器 SINGLE CHANNEL INTEGRATED
|
|
2,975预期 2026/8/3
|
|
|
¥78.8627
|
|
|
¥54.0253
|
|
|
¥54.0253
|
|
最低: 1
倍数: 1
最大: 20
:
3,000
|
|
|
|
|
GaN 场效应晶体管 GaN FET, 700V, 75m, DPAK
- NTD100N70GN1TXG
- onsemi
-
1:
¥23.8204
-
2,500预期 2026/7/28
-
新产品
|
Mouser 零件编号
863-NTD100N70GN1TXG
新产品
|
onsemi
|
GaN 场效应晶体管 GaN FET, 700V, 75m, DPAK
|
|
2,500预期 2026/7/28
|
|
|
¥23.8204
|
|
|
¥15.3002
|
|
|
¥10.4186
|
|
|
¥10.4186
|
|
|
¥8.7688
|
|
|
查看
|
|
|
¥7.797
|
|
|
¥7.3676
|
|
|
¥6.9947
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 GaN FET, 700V, 75m, 8x8
- NTMT100N70GN1TXG
- onsemi
-
1:
¥24.7357
-
2,500预期 2026/7/28
-
新产品
|
Mouser 零件编号
863-NTMT100N70GN1TXG
新产品
|
onsemi
|
GaN 场效应晶体管 GaN FET, 700V, 75m, 8x8
|
|
2,500预期 2026/7/28
|
|
|
¥24.7357
|
|
|
¥15.9669
|
|
|
¥11.0062
|
|
|
¥11.0062
|
|
|
¥8.8479
|
|
|
查看
|
|
|
¥8.2603
|
|
|
¥7.9665
|
|
|
¥7.7066
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 GaN FET, 700V, 132m, 8x8
- NTMT170N70GN1TXG
- onsemi
-
1:
¥21.1762
-
2,500预期 2026/7/22
-
新产品
|
Mouser 零件编号
863-NTMT170N70GN1TXG
新产品
|
onsemi
|
GaN 场效应晶体管 GaN FET, 700V, 132m, 8x8
|
|
2,500预期 2026/7/22
|
|
|
¥21.1762
|
|
|
¥13.4809
|
|
|
¥9.0965
|
|
|
¥9.0965
|
|
|
¥7.345
|
|
|
查看
|
|
|
¥6.5766
|
|
|
¥6.1472
|
|
|
¥5.8421
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
射频放大器 Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
- MGA-445940-02
- CML Micro
-
1:
¥1,746.5054
-
40在途量
|
Mouser 零件编号
938-MGA-445940-02
|
CML Micro
|
射频放大器 Point-to-Point Radio and WiMAX GaN based High Power Amplifiers
|
|
40在途量
在途量:
20 预期 2026/8/4
20 预期 2026/8/18
|
|
|
¥1,746.5054
|
|
|
¥1,746.5054
|
|
|
¥1,606.9391
|
|
最低: 1
倍数: 1
:
10
|
|
|
|
|
GaN 场效应晶体管 10W, 4.0GHz, 830120P, GaN HEMT, PILL
- CGH40010P
- MACOM
-
1:
¥958.6694
-
117预期 2026/11/17
|
Mouser 零件编号
941-CGH40010P
|
MACOM
|
GaN 场效应晶体管 10W, 4.0GHz, 830120P, GaN HEMT, PILL
|
|
117预期 2026/11/17
|
|
|
¥958.6694
|
|
|
¥797.4749
|
|
|
¥782.8753
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
- CGHV27015S
- MACOM
-
1:
¥525.7438
-
110预期 2026/7/22
|
Mouser 零件编号
941-CGHV27015S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
|
|
110预期 2026/7/22
|
|
|
¥525.7438
|
|
|
¥456.7573
|
|
|
¥428.4734
|
|
|
¥403.4891
|
|
|
¥371.2276
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
- MASTERGAN5
- STMicroelectronics
-
1:
¥51.1212
-
62库存量
|
Mouser 零件编号
511-MASTERGAN5
|
STMicroelectronics
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
|
|
62库存量
|
|
|
¥51.1212
|
|
|
¥39.211
|
|
|
¥36.2278
|
|
|
¥32.9169
|
|
|
查看
|
|
|
¥31.3462
|
|
|
¥30.4422
|
|
|
¥30.1032
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG210QTR
- STMicroelectronics
-
1:
¥24.8939
-
700在途量
-
新产品
|
Mouser 零件编号
511-STDRIVEG210QTR
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700在途量
|
|
|
¥24.8939
|
|
|
¥18.532
|
|
|
¥16.9613
|
|
|
¥15.2211
|
|
|
查看
|
|
|
¥12.9046
|
|
|
¥14.3962
|
|
|
¥14.0572
|
|
|
¥13.3227
|
|
|
¥12.9046
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
- STDRIVEG211QTR
- STMicroelectronics
-
1:
¥24.8939
-
700在途量
-
新产品
|
Mouser 零件编号
511-STDRIVEG211QTR
新产品
|
STMicroelectronics
|
栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches 220V
|
|
700在途量
|
|
|
¥24.8939
|
|
|
¥18.532
|
|
|
¥16.9613
|
|
|
¥15.2211
|
|
|
查看
|
|
|
¥12.9046
|
|
|
¥14.3962
|
|
|
¥14.0572
|
|
|
¥13.3227
|
|
|
¥12.9046
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 650V, 35mohm GaN FET in TO247-4L
- TP65H035G4YS
- Renesas Electronics
-
1,200:
¥47.234
-
无库存交货期 18 周
|
Mouser 零件编号
227-TP65H035G4YS
|
Renesas Electronics
|
GaN 场效应晶体管 650V, 35mohm GaN FET in TO247-4L
|
|
无库存交货期 18 周
|
|
最低: 1,200
倍数: 600
|
|
|
|
|
栅极驱动器 High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
- MASTERGAN3
- STMicroelectronics
-
1,560:
¥31.2671
-
无库存交货期 26 周
|
Mouser 零件编号
511-MASTERGAN3
|
STMicroelectronics
|
栅极驱动器 High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
|
|
无库存交货期 26 周
|
|
最低: 1,560
倍数: 1,560
|
|
|
|
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
- MASTERGAN5TR
- STMicroelectronics
-
3,000:
¥33.9113
-
无库存交货期 26 周
|
Mouser 零件编号
511-MASTERGAN5TR
|
STMicroelectronics
|
栅极驱动器 High power density 600 V half-bridge driver with two enhancement mode GaN power
|
|
无库存交货期 26 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT
- LMG3411R050RWHR
- Texas Instruments
-
2,000:
¥74.693
-
无库存交货期 16 周
|
Mouser 零件编号
595-LMG3411R050RWHR
|
Texas Instruments
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT
|
|
无库存交货期 16 周
|
|
|
¥74.693
|
|
|
报价
|
|
|
报价
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT
- LMG3422R030RQZR
- Texas Instruments
-
2,000:
¥98.4343
-
无库存交货期 16 周
|
Mouser 零件编号
595-LMG3422R030RQZR
|
Texas Instruments
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT
|
|
无库存交货期 16 周
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT
- LMG3425R030RQZR
- Texas Instruments
-
2,000:
¥118.9438
-
无库存交货期 16 周
|
Mouser 零件编号
595-LMG3425R030RQZR
|
Texas Instruments
|
栅极驱动器 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT
|
|
无库存交货期 16 周
|
|
最低: 2,000
倍数: 2,000
:
2,000
|
|
|
|
|
射频放大器 8.5-10.5 GHz 2W
- QPA2610TR7
- Qorvo
-
500:
¥283.9125
-
无库存交货期 19 周
|
Mouser 零件编号
772-QPA2610TR7
|
Qorvo
|
射频放大器 8.5-10.5 GHz 2W
|
|
无库存交货期 19 周
|
|
最低: 500
倍数: 500
:
500
|
|
|
|
|
射频放大器 100 W S-Bd GaN PA
- QPA3055P
- Qorvo
-
10:
¥9,693.705
-
无库存交货期 21 周
|
Mouser 零件编号
772-QPA3055P
|
Qorvo
|
射频放大器 100 W S-Bd GaN PA
|
|
无库存交货期 21 周
|
|
最低: 10
倍数: 10
|
|
|
|
|
RF 开关 IC 50W 0.15-2.8GHz GaN SPDT
- QPC1005
- Qorvo
-
1:
¥1,486.6393
-
无库存交货期 28 周
|
Mouser 零件编号
772-QPC1005
|
Qorvo
|
RF 开关 IC 50W 0.15-2.8GHz GaN SPDT
|
|
无库存交货期 28 周
|
|
|
¥1,486.6393
|
|
|
¥1,486.4698
|
|
|
¥1,060.1095
|
|
|
¥1,060.1095
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
RF 开关 IC 50W, 0.15-2.8GHz GaN SP3T
- QPC1006
- Qorvo
-
100:
¥684.6557
-
无库存交货期 28 周
|
Mouser 零件编号
772-QPC1006
|
Qorvo
|
RF 开关 IC 50W, 0.15-2.8GHz GaN SP3T
|
|
无库存交货期 28 周
|
|
|
¥684.6557
|
|
|
查看
|
|
|
报价
|
|
最低: 100
倍数: 100
:
100
|
|
|
|
|
GaN 场效应晶体管 3.3-3.8GHz 5W 50V GaN Transistor
- QPD0005TR13
- Qorvo
-
2,500:
¥42.036
-
无库存交货期 20 周
|
Mouser 零件编号
772-QPD0005TR13
|
Qorvo
|
GaN 场效应晶体管 3.3-3.8GHz 5W 50V GaN Transistor
|
|
无库存交货期 20 周
|
|
最低: 2,500
倍数: 2,500
:
2,500
|
|
|
|
|
GaN 场效应晶体管 3.4-3.8GHz 15W 50V GaN Single Channel
- QPD0007TR13
- Qorvo
-
2,500:
¥99.6773
-
无库存交货期 20 周
|
Mouser 零件编号
772-QPD0007TR13
|
Qorvo
|
GaN 场效应晶体管 3.4-3.8GHz 15W 50V GaN Single Channel
|
|
无库存交货期 20 周
|
|
最低: 2,500
倍数: 2,500
:
2,500
|
|
|
|
|
射频放大器 100W GaN25HV
- QPD0060TR7
- Qorvo
-
500:
¥568.3561
-
无库存交货期 22 周
|
Mouser 零件编号
772-QPD0060TR7
|
Qorvo
|
射频放大器 100W GaN25HV
|
|
无库存交货期 22 周
|
|
|
¥568.3561
|
|
|
报价
|
|
|
报价
|
|
最低: 500
倍数: 500
:
500
|
|
|