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ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™with Molded Modules
03/17/2026
03/17/2026
该器件额定电压为1200V,外形尺寸为41.6mm × 52.5mm ,搭载第四代SiC MOSFET元件。
ROHM Semiconductor RH7G03BBJFRA P沟道功率MOSFET
11/18/2025
11/18/2025
该功率MOSFET的VDSS额定值为-40V,ID额定值(VDS =-10V)为±22A。
ROHM Semiconductor SCT2H12NWB 1700V N沟道SiC功率MOSFET
08/21/2025
08/21/2025
一款额定漏源电压 (VDSS) 为1700V、额定漏极连续电流 (ID) 为3.9A的SiC MOSFET。
ROHM Semiconductor RQ3G120BKFRA 40V N沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,额定VDSS 为40V,额定ID 为±12A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7G04 40 V N通道功率MOSFET
08/19/2025
08/19/2025
该设备为车规级MOSFET,额定VDSS 为40V,额定ID为±40A,符合AEC-Q101认证要求。
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STMicroelectronics ISM6HGK256X Intelligent IMU
09/03/2026
09/03/2026
A high-end, low-noise, low-power 6-axis intelligent inertial measurement unit (IMU).
NXP Semiconductors NAFE33352-UIOM AIO AFE Arduino® Shield Eval Board
09/03/2026
09/03/2026
Designed for the NAFE33352 industrial-grade universal analog input and output front-end (AFE).
STMicroelectronics LSM6DSK320X 6-Axis Inertial Measurement Unit (IMU)
09/03/2026
09/03/2026
A compact, low-power, high-performance 6-axis inertial measurement unit (IMU).
Infineon Technologies 65W USB-C™ Power Delivery Reference Designs
09/03/2026
09/03/2026
These reference designs were developed for a USB-PD charger or a notebook USB-PD adapter.
Microchip Technology HV-D3 mSiC® Power Modules
09/01/2026
09/01/2026
Simplifies and accelerates adoption of SSTs in data centers & other high-voltage power applications.
Espressif Systems ESP32-P4 System-on-Chip (SoC)
09/01/2026
09/01/2026
High-performance RISC-V SoC with integrated media processing, HMI, and security capabilities.
Apex Microtechnology PA168 High Voltage Power Operational Amplifiers
08/25/2026
08/25/2026
Feature a monolithic amplifier core designed for high-density power applications.
Kingston M.2 2280 QLC PCIe NVMe Solid State Drives (SSDs)
08/25/2026
08/25/2026
These devices are high-performance storage solutions built on the PCIe Gen 4x4 NVMe 1.4 interface.
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