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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,106.7768
-
28库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
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28库存量
|
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¥3,106.7768
|
|
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¥2,682.1567
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¥2,576.1175
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¥2,512.1934
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报价
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报价
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最低: 1
倍数: 1
:
50
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N-Channel
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Si
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36 A
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133 V
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1.8 MHz to 500 MHz
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23 dB
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1.5 kW
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- 40 C
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+ 150 C
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SMD/SMT
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OM-1230-4
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Reel, Cut Tape
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9H10S-500AWT/OMP-780/REELDP
- BLP9H10S-500AWTY
- Ampleon
-
1:
¥478.8375
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57库存量
-
Mouser 的新产品
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Mouser 零件编号
94-BLP9H10S-500AWTY
Mouser 的新产品
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Ampleon
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9H10S-500AWT/OMP-780/REELDP
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|
57库存量
|
|
|
¥478.8375
|
|
|
¥394.6412
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¥373.6232
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¥349.5542
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|
最低: 1
倍数: 1
:
100
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Dual N-Channel
|
LDMOS
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48 V
|
174 mOhms, 250 mOhms
|
600 MHz to 960 MHz
|
19 dB
|
500 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
OMP-780-6F-1-7
|
Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥66.8734
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42库存量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
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42库存量
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¥66.8734
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¥51.2455
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¥44.2056
|
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¥41.0755
|
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查看
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¥32.2276
|
|
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¥38.3861
|
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¥36.1261
|
|
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¥34.1373
|
|
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¥32.2276
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|
最低: 1
倍数: 1
:
1,000
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N-Channel
|
Si
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3 A
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30 V
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136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
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- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
- MMRF1014NT1
- NXP Semiconductors
-
1:
¥184.1222
-
246库存量
-
寿命结束
|
Mouser 零件编号
841-MMRF1014NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
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246库存量
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|
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¥184.1222
|
|
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¥146.787
|
|
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¥136.9673
|
|
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¥134.2779
|
|
|
查看
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|
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¥127.238
|
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¥122.2886
|
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¥120.4693
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¥114.2995
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报价
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最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
50 mA
|
68 V
|
|
1 MHz to 2 GHz
|
19 dB
|
4 W
|
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
NXP Semiconductors MMRF1310HR5
- MMRF1310HR5
- NXP Semiconductors
-
1:
¥1,343.2536
-
1库存量
-
寿命结束
|
Mouser 零件编号
841-MMRF1310HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
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1库存量
|
|
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¥1,343.2536
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¥1,343.2536
|
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最低: 1
倍数: 1
|
|
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N-Channel
|
Si
|
|
133 V
|
|
1.8 MHz to 600 MHz
|
28 dB
|
300 W
|
|
+ 150 C
|
SMD/SMT
|
NI-780H-4
|
Reel, Cut Tape
|
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