|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
¥164.3585
-
188库存量
-
新产品
|
Mouser 零件编号
726-IMY120R018CM2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
188库存量
|
|
|
¥164.3585
|
|
|
¥125.1475
|
|
|
¥104.3103
|
|
|
¥90.3209
|
|
|
¥78.8288
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
¥117.8703
-
235库存量
-
新产品
|
Mouser 零件编号
726-IMY120R036AM2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
235库存量
|
|
|
¥117.8703
|
|
|
¥89.7446
|
|
|
¥74.7721
|
|
|
¥66.67
|
|
|
¥62.2856
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
¥106.9545
-
182库存量
-
新产品
|
Mouser 零件编号
726-IMY120R036CM2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
182库存量
|
|
|
¥106.9545
|
|
|
¥79.6537
|
|
|
¥66.4214
|
|
|
¥58.0707
|
|
|
查看
|
|
|
¥50.4545
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
¥392.4829
-
5库存量
-
960在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R007M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
5库存量
960在途量
在途量:
240 预期 2026/10/22
720 预期 2027/5/18
|
|
|
¥392.4829
|
|
|
¥277.4263
|
|
|
¥239.6278
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
¥405.8056
-
588库存量
-
新产品
|
Mouser 零件编号
726-IMSQ120R012M2HHX
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
588库存量
|
|
|
¥405.8056
|
|
|
¥346.1642
|
|
|
¥285.6188
|
|
|
¥285.6188
|
|
最低： 1
倍数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥142.606
-
1,580库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,580库存量
|
|
最低： 1
倍数： 1
最大： 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
¥132.5151
-
1,832库存量
-
新产品
|
Mouser 零件编号
726-IMCQ120R026M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,832库存量
|
|
|
¥132.5151
|
|
|
¥100.909
|
|
|
¥84.0381
|
|
|
¥74.9416
|
|
|
¥70.06
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
¥102.152
-
255库存量
-
750预期 2026/8/13
-
新产品
|
Mouser 零件编号
726-IMCQ120R040M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
255库存量
750预期 2026/8/13
|
|
|
¥102.152
|
|
|
¥73.8681
|
|
|
¥61.5398
|
|
|
¥54.8389
|
|
|
¥51.2794
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
¥81.3148
-
345库存量
-
750预期 2027/5/18
-
新产品
|
Mouser 零件编号
726-IMCQ120R053M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
345库存量
750预期 2027/5/18
|
|
|
¥81.3148
|
|
|
¥54.4321
|
|
|
¥40.8608
|
|
|
¥37.8889
|
|
|
¥37.4708
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
¥76.4332
-
856库存量
-
新产品
|
Mouser 零件编号
726-IMCQ120R078M2HXT
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856库存量
|
|
|
¥76.4332
|
|
|
¥53.7654
|
|
|
¥43.505
|
|
|
¥38.6234
|
|
|
¥34.239
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
¥207.9426
-
692库存量
-
新产品
|
Mouser 零件编号
726-IMSQ120R026M2HHX
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
692库存量
|
|
|
¥207.9426
|
|
|
¥148.143
|
|
|
¥131.7693
|
|
|
¥124.5712
|
|
|
¥124.5712
|
|
最低： 1
倍数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
¥175.6924
-
670库存量
-
新产品
|
Mouser 零件编号
726-IMSQ120R040M2HHX
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
670库存量
|
|
|
¥175.6924
|
|
|
¥131.193
|
|
|
¥113.4859
|
|
|
¥107.4517
|
|
|
¥100.4118
|
|
最低： 1
倍数： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
¥238.7238
-
125库存量
-
240预期 2026/8/13
-
新产品
|
Mouser 零件编号
726-IMZA120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
125库存量
240预期 2026/8/13
|
|
最低： 1
倍数： 1
最大： 10
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
¥189.9191
-
147库存量
-
240在途量
-
新产品
|
Mouser 零件编号
726-IMZA120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
147库存量
240在途量
|
|
最低： 1
倍数： 1
最大： 30
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
¥157.9062
-
341库存量
-
新产品
|
Mouser 零件编号
726-IMZA120R022M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
341库存量
|
|
最低： 1
倍数： 1
最大： 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
¥104.638
-
352库存量
-
新产品
|
Mouser 零件编号
726-IMZA120R040M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
352库存量
|
|
|
¥104.638
|
|
|
¥68.9074
|
|
|
¥59.89
|
|
|
¥51.2003
|
|
|
¥50.8726
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥220.2709
-
640库存量
-
240预期 2026/10/22
-
新产品
|
Mouser 零件编号
726-IMZC120R012M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
640库存量
240预期 2026/10/22
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥183.0487
-
129库存量
-
480预期 2026/7/17
-
新产品
|
Mouser 零件编号
726-IMZC120R017M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
129库存量
480预期 2026/7/17
|
|
最低： 1
倍数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥141.2839
-
471库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R026M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
471库存量
|
|
最低： 1
倍数： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
1,001库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
1,001库存量
|
|
最低： 1
倍数： 1
最大： 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥84.0381
-
739库存量
-
新产品
|
Mouser 零件编号
726-IMZC120R053M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
739库存量
|
|
|
¥84.0381
|
|
|
¥49.5505
|
|
|
¥41.9343
|
|
|
¥41.8552
|
|
|
¥41.1885
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
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碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
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1:
¥298.3539
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1,063库存量
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1,000预期 2026/9/3
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Mouser 零件编号
726-IMBG120R008M2HXT
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Infineon Technologies
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碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1,063库存量
1,000预期 2026/9/3
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¥298.3539
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¥223.9999
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¥223.9999
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最低： 1
倍数： 1
最大： 10
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1,000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.2 kV
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189 A
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7.7 mOhms
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- 7 V, + 20 V
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5.1 V
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195 nC
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- 55 C
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+ 175 C
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800 W
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Enhancement
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碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
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1:
¥172.1329
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3,290库存量
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Mouser 零件编号
726-IMBG120R017M2HXT
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Infineon Technologies
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碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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3,290库存量
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¥172.1329
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¥124.2435
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¥102.4006
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¥100.6604
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¥86.106
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报价
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报价
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最低： 1
倍数： 1
:
1,000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.2 kV
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107 A
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17.1 mOhms
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- 7 V, + 20 V
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5.1 V
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89 nC
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- 55 C
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+ 175 C
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470 W
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Enhancement
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碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R007M2HXTMA1
- Infineon Technologies
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1:
¥368.6625
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6库存量
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1,500预期 2026/7/24
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新产品
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Mouser 零件编号
726-IMCQ120R007M2HXT
新产品
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Infineon Technologies
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碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
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6库存量
1,500预期 2026/7/24
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¥368.6625
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¥314.4903
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¥259.4819
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¥259.4819
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最低： 1
倍数： 1
:
750
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SMD/SMT
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PG-HDSOP-22
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1.2 kV
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257 A
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7.5 mOhms
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4.2 V
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+ 175 C
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- 55 C
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1.172 kW
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CoolSiC
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碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
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1:
¥152.9455
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146库存量
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新产品
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Mouser 零件编号
726-IMSQ120R053M2HHX
新产品
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Infineon Technologies
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碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
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146库存量
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¥152.9455
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¥116.5482
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¥97.1122
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¥86.5241
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¥80.8967
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最低： 1
倍数： 1
:
750
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1.2 kV
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