结果: 29
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 1,285库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 3,421库存量
最低: 1
倍数: 1
: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 1,222库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 776库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS TOLL 650V 1,374库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT PSOF-8 N-Channel 1 Channel 650 V 73 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 1,802库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 569库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 1,595库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 430库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 798库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 418库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 32MOHM 650V M3S 773库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 32MOHM 650V M3S 679库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 23MOHM 650V M3S 720库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 32MOHM 650V M3S 800库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 23MOHM 650V M3S 410库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 67 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 245 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 32MOHM 650V M3S 396库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-3L 23MOHM 650V M3S 450库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-3L 23MOHM 650V M3S 23库存量
4,050在途量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS TO247-3L 32MOHM 650V M3S 30库存量
3,150在途量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 51 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 312库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 449库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 422库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 8 V, + 22 V 4.3 V 50 nC - 55 C + 175 C 129 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 8库存量
900预期 2026/6/26
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 189库存量
最低: 1
倍数: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC