结果: 24
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L 1,292库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L 569库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L 430库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L 1,824库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L 3,923库存量
最低: 1
倍数: 1
卷轴: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 40MOHM 1200V 1,511库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 40MOHM 1200V 1,014库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 2,060库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 2,176库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS 20MOHM 900V 1,861库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 20MOHM 1200V 257库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 686库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 60MOHM 900V 1,230库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L 1,595库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOSFET 900V TO247-4L 60MOHM 314库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS 60MOHM 900V 1,276库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L 828库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS 20MW 1200V 1,471库存量
最低: 1
倍数: 1
卷轴: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 20MW 1200V 723库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC

onsemi 碳化硅MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L 212库存量
最低: 1
倍数: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 80MOHM 1200V 253库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 20MOHM 900V 370库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 40MOHM 1200V 635库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 160MOHM 1200V 990库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC