750V N沟道SiC MOSFET

ROHM Semiconductor 750V N通道SiC MOSFET可提升开关频率,因此减少所需的电容器、电抗器以及其他组件的数量。这些SiC MOSFET采用TO-247N、TOLL、TO-263-7L、TO-263-7LA和TO-247-4L封装。此系列器件的静态漏源导通电阻(RDS(on))额定值为13mΩ至65mΩ(典型值),连续漏极电流(ID)和源极电流(IS)范围为22A至120A(TC=25°C时)。这些ROHM Semiconductor 750V SiC MOSFET具有高耐压、低导通电阻和高速开关特性,充分利用了SiC技术的独特优势。

结果: 23
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最大工作温度 Pd-功率耗散 通道模式 资格
ROHM Semiconductor 碳化硅MOSFET TO247 750V 105A N-CH SIC 402库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 2,008库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 635库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 375库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 31A N-CH SIC 1,946库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450库存量
最低: 1
倍数: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 430库存量
最低: 1
倍数: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 700库存量
最低: 1
倍数: 1
卷轴: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 26A SIC 784库存量
最低: 1
倍数: 1
卷轴: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 37A SIC 8库存量
2,000预期 2026/7/17
最低: 1
倍数: 1
卷轴: 2,000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 1,460库存量
最低: 1
倍数: 1
最大: 100
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 31A N-CH SIC 3,032库存量
最低: 1
倍数: 1
最大: 100
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 45 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 105A N-CH SIC 615库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 98A N-CH SIC 344库存量
最低: 1
倍数: 1
卷轴: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 98 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 588库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 321库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450预期 2026/5/14
最低: 1
倍数: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
450预期 2026/5/14
最低: 1
倍数: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 750V, 45mO, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
1,000预期 2026/5/14
最低: 1
倍数: 1
最大: 100
卷轴: 1,000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 120A SIC
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 120 A 4.8 V 170 nC + 175 V 405 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 80A SIC
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 61A SIC
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 61 A 4.8 V 94 nC + 175 V 214 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TOLL 750V 46A SIC

SMD/SMT TOLL-9 N Channel 1 Channel 750 V 46 A 4.8 V 72 nC + 175 V 164 W Enhancement