MOSFET

结果: 1,312
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STMicroelectronics MOSFET N-Ch 60 Volt 16 Amp
11,185预期 2026/9/18
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 16 A 100 mOhms - 20 V, 20 V 2 V 10 nC - 55 C + 175 C 45 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-channel 600 V 0.27 ohm 13A MDmesh
2,000预期 2027/5/7
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp
800在途量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 56 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube
STMicroelectronics MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
1,000预期 2026/10/23
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 180 A 2.5 mOhms - 20 V, 20 V 4 V 193 nC - 55 C + 175 C 315 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2
1,988预期 2027/3/26
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 120 mOhms - 25 V, 25 V 3 V 37 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET 1500V 6Ohm 2.5A N-Channel
1,000预期 2026/7/28
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.5 kV 2.5 A 9 Ohms - 30 V, 30 V 5 V 29.3 nC - 50 C + 150 C 140 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
1,694预期 2027/2/5
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 5 V 82 nC - 55 C + 150 C 208 W Enhancement MDmesh Tube
STMicroelectronics MOSFET PowerMESH MOSFET
2,946预期 2026/8/19
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.5 kV 4 A 5 Ohms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 160 W Enhancement PowerMESH Tube
STMicroelectronics MOSFET N Ch 250V 0.21 15A Pwr MOSFET
2,000预期 2026/12/4
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 45 A 69 mOhms - 20 V, 20 V 2 V 68.2 nC - 55 C + 150 C 160 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 900 Volt 8.0 A Zener SuperMESH
3,000预期 2027/1/8
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 8 A 1.3 Ohms - 30 V, 30 V 3 V 72 nC - 55 C + 150 C 160 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-Ch 950V 1Ohm 9A pwr MDmesh K5
3,000预期 2026/10/2
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 9 A 1.25 Ohms - 30 V, 30 V 4 V 13 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH
590预期 2027/3/5
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 13 A 550 mOhms - 30 V, 30 V 3 V 66 nC - 55 C + 150 C 150 W Enhancement SuperMESH Tube

STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
570预期 2027/1/29
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 18.5 A 299 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 250 W Enhancement SuperMESH Tube

STMicroelectronics MOSFET N-Ch 250 Volt 52 Amp Zener SuperMESH
591预期 2026/8/28
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 52 A 45 mOhms - 30 V, 30 V 4.5 V 160 nC - 55 C + 150 C 300 W Enhancement SuperMESH Tube

STMicroelectronics MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 packag
441预期 2027/5/28
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 60 mOhms - 25 V, 25 V 3 V 90 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
257在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 69 A 24 mOhms - 25 V, 25 V 4 V 203 nC - 55 C + 150 C 450 W Enhancement AEC-Q100 MDmesh Tube
STMicroelectronics MOSFET N-Ch 55 Volt 120 Amp
996预期 2026/7/16
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 55 V 120 A 6 mOhms - 20 V, 20 V 2 V 190 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET 60V 0.032Ohm 30A N-Channel
1,977预期 2026/8/7
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 30 A 40 mOhms - 18 V, 18 V 1 V 17 nC - 55 C + 175 C 70 W Enhancement AEC-Q100 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100 Volt 40 Amp
879预期 2026/8/7
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 40 A 30 mOhms - 15 V, 15 V 1 V 64 nC - 65 C + 175 C 150 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET i 756库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 80 A 6 mOhms - 20 V, 20 V 2 V 36 nC - 55 C + 175 C 70 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 26库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 3.8 A 1.95 Ohms - 30 V, 30 V 4.5 V 14 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 400 Volt 3.0 A 820库存量
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 400 V 3 A 1.8 Ohms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 45 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP p 861库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.5 A 550 mOhms - 25 V, 25 V 2 V 12.4 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag 153库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 10 A 325 mOhms - 25 V, 25 V 2 V 15 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa 631库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 275 mOhms - 25 V, 25 V 2 V 20 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube