STMicroelectronics STDRIVEG600半桥栅极驱动器

STMicroelectronics STDRIVEG600半桥栅极驱动器是一款单芯片半桥栅极驱动器，用于GaN（氮化镓）eHEMT（增强模式高电子迁移率晶体管）或N沟道功率MOSFET。STDRIVEG600的高侧设计用于承受高达600V的电压，适合用于总线电压高达500V的设计。该器件具有大电流能力、短传播延迟以及低至5V的工作电源电压，因此非常适合用于驱动高速GaN和硅FET。

STDRIVEG600在上下驱动部分均具有UVLO（欠压闭锁）保护功能，防止电源开关在低效率或危险条件下运行。该器件还包括联锁功能，可消除交叉传导情况。

逻辑输入端兼容CMOS/TTL，低至3.3V，便于连接微控制器和DSP。

STMicroelectronics STDRIVEG600半桥栅极驱动器采用SO-16封装，工作结温范围为-40°C至150°C。

The STDRIVEG210 and the STDRIVEG211 are two new high-voltage half-bridge gate drivers for N channel Enhancement Mode GaN with High voltage rail up to 220 V. Both the STDRIVEG210 and STDRIVEG211 feature the high-side driver section to stand a voltage rail up to 220 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG210 and the STDRIVEG211 optimized for driving high-speed GaN.

The STDRIVEG210 features supply UVLOs tailored to fast startup and low consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).

The STDRIVEG211 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD. The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.

Both the STDRIVEG210 and the STDRIVEG211 operate in the industrial temperature range, -40 °C to 125 °C. The devices are available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.