NXP Semiconductors MRF1K50H 1500W射频功率晶体管
NXP MRF1K50H 1500W 射频功率晶体管将最高射频输出功率与卓越坚固结构和热性能完美结合。这款晶体管设计用于在 50V 电压下提供 1.50 kW CW 功率，减少了大功率射频放大器中的晶体管使用数量。MRF1K50H具有无与伦比的输入和输出设计，允许在1.8MHz - 500MHz宽频率范围内使用。应用包括粒子加速器的激光和等离子源、工业焊接机器、无线电和VHF电视广播信号传送器以及业务无线电线性放大器。
特性
- Housed in a NI-1230 air-cavity ceramic package
- Extreme Ruggedness, 65:1 VSWR
- High drain-source avalanche energy absorption capability
- Unmatched input and output allows wide frequency range utilization
- Can be used single-ended or in a push-pull configuration
- Characterized from 30V to 50V for ease of use
- Suitable for linear applications
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- RoHS compliant
应用
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding, and drying systems
- Broadcast
- Radio broadcast
- VHF TV broadcast
- Aerospace
- VHF Omnidirectional Range (VOR)
- HF and VHF communications
- Weather radar
- Mobile radio
- VHF and UHF base stations
规范
- 50VDC maximum operating voltage
- 230MHz frequency
- Typical capacitance
- 3.48pF reverse transfer
- 205pF output
- 664pF input
- 22.5dB to 25.5dB power gain range
- 74.0% typical drain efficiency
- -9dB maximum input return loss
- 50V test voltage
- Junction to case
- 0.10°C/W thermal resistance
- 0.028°C/W thermal impedance
- >65:1 VSWR at all phase angles
- Temperature ranges
- -40°C to +150°C case operating
- -40°C to +225°C operating junction
- -65°C to +150°C storage
Related Transistors
NXP Semiconductors MRF1K50N 1500W射频功率晶体管
1500W 射频功率晶体管，将高射频输出、卓越坚固结构和热性能完美结合。
NXP Semiconductors MRFX系列65V LDMOS晶体管
连续波射频功率晶体管，具有高射频输出功率，非常坚固耐用。
Development Tools
NXP Semiconductors MRFX1K80参考电路
设计工具，支持对NXP MRFX1K80射频功率晶体管进行快速评估和原型设计。
发布日期: 2016-06-28
| 更新日期: 2022-03-11