NXP Semiconductors MRF1K50N 1500W射频功率晶体管
NXP MRF1K50N 和 MRF1K50GNR5 1500W 射频功率晶体管将高射频输出功率与卓越坚固结构和热性能完美结合。这些LDMOS器件采用超模压塑料封装，与陶瓷MRF1K50H相比，热阻最多可低30%。NXP的塑料封装技术有助于从射频晶体管中提取更多性能，同时由于更小的尺寸公差和更好的焊料连接，简化了放大器的可制造性。 NXP MRF1K50N和MRF1K50GNR5射频功率晶体管设计用于在50V电压下提供1.50kW CW功率，以及减少大功率射频放大器中的晶体管使用数量。这些器件的输入和输出设计使其可以在 1.8-500MHz 的宽频率范围内使用。
NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8MHz to 500MHz.
特性
- High drain-source avalanche energy absorption capability
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single-ended or in a push-pull configuration
- Characterized from 30V to 50V for ease of use
- Suitable for linear application
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Offered in OM-1230-4L (MRF1K50N) and OM-1230G-4L (MRF1K50GN) packages for design flexibility
- RoHS compliant
应用
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI, diathermy, skin laser, and ablation
- Industrial heating, welding, and drying systems
- Broadcast
- Radio broadcast
- VHF TV broadcast
- Aerospace
- VHF Omnidirectional Range (VOR)
- HF and VHF communications
- Weather radar
- Mobile Radio
- VHF and UHF base stations
规范
- N-channel polarity
- Si technology
- 36A continuous drain current
- 133V drain-source breakdown voltage
- 1.8MHz to 500MHz operating frequency range
- 23dB gain
- 1.5kW output power
- -40°C to +150°C operating temperature range
Development Tools
NXP Semiconductors MRFX1K80参考电路
设计工具，支持对NXP MRFX1K80射频功率晶体管进行快速评估和原型设计。
Related Transistors
NXP Semiconductors MRF1K50H 1500W射频功率晶体管
将最高射频输出功率与卓越坚固结构和热性能完美结合。
NXP Semiconductors MRFX系列65V LDMOS晶体管
连续波射频功率晶体管，具有高射频输出功率，非常坚固耐用。
发布日期: 2016-12-07
| 更新日期: 2022-03-11