绝缘栅双极晶体管(IGBT)

 绝缘栅双极晶体管(IGBT)
IGBT晶体管(IGBT Transistor),应有尽有。Mouser Electronics(贸泽电子)是众多IGBT晶体管原厂的授权代理商,提供多家业界知名制造商的IGBT晶体管,包括Infineon、IXYS、ON Semiconductor, STMicroelectronics、Vishay等。想了解更多IGBT晶体管产品,请浏览下列产品分类。
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Microchip Technology 绝缘栅双极晶体管(IGBT) IGBT PT MOS 8 Combi 900 V 80 A TO-264
214在途量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 900 V 2.5 V - 30 V, 30 V 145 A 625 W - 55 C + 150 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
1,978预期 2026/9/14
最低: 1
倍数: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.7 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGB30H60DLLFBAG AEC-Q101 Reel, Cut Tape, MouseReel

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
3,817预期 2026/9/14
最低: 1
倍数: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) IGBT 1200V 7A PowerMESH Ultrafast
4,000预期 2026/9/16
最低: 1
倍数: 1
: 1,000

Si D2PAK SMD/SMT Single 1.2 kV 2.3 V - 20 V, 20 V 14 A 75 W - 55 C + 150 C STGB3NC120HD Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed
10,000在途量
最低: 1
倍数: 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) PowerMESH&#34 IGBT
5,000在途量
最低: 1
倍数: 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.9 V - 20 V, 20 V 15 A 63 W - 55 C + 150 C STGD6NC60HDT4 Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-Ch 600 Volt 7 Amp
4,900预期 2026/9/9
最低: 1
倍数: 1
: 2,500

Si TO-252-3 SMD/SMT Single 600 V 1.6 V - 20 V, 20 V 15 A 55 W - 65 C + 150 C STGD7NB60S Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 20A High Speed Trench Gate IGBT
3,729在途量
最低: 1
倍数: 1

Si TO-220-3 FP Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 37 W - 55 C + 175 C STGF20H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
1,984预期 2027/4/2
最低: 1
倍数: 1
: 1,000

Si H2PAK-2 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 10 A low loss
4,000在途量
最低: 1
倍数: 1

Si STGP10M65DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-Ch 600 Volt 30 Amp
1,750在途量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 2.5 V - 20 V, 20 V 60 A 200 W - 55 C + 150 C STGP20NC60V Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 30A High Speed Trench Gate IGBT
2,855在途量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 2.4 V - 20 V, 20 V 60 A 260 W - 40 C + 175 C STGP30H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 600 V, 30 A high speed HB series IGBT
9,000在途量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGP30H60DFB Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
1,000预期 2026/9/14
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) N Ch 500V 0.21 15A Pwr MOSFET
5,000预期 2026/12/4
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 2.2 V - 20 V, 20 V 15 A 65 W - 55 C + 150 C STGP8NC60KD Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
3,115在途量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
1,593预期 2026/9/14
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
984在途量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
1,200预期 2027/5/28
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWA80H65FB Tube

onsemi 绝缘栅双极晶体管(IGBT) 1200V 5A Field Stop Trench IGBT
7,460预期 2026/10/6
最低: 1
倍数: 1
最大: 320
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 1.2 kV 2.9 V - 25 V, 25 V 10 A 69 W - 55 C + 150 C FGD5T120SH Reel, Cut Tape, MouseReel


Infineon Technologies 绝缘栅双极晶体管(IGBT) DISCRETE SWITCHES
346预期 2026/9/10
最低: 1
倍数: 1

Si Through Hole Single 750 V 1.3 V - 20 V, 20 V 150 A 682 W - 40 C + 175 C Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) DISCRETES
960在途量
最低: 1
倍数: 1

Si Through Hole Single 650 V 1.66 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C TRENCHSTOP 5 H5 Tube

Infineon Technologies 绝缘栅双极晶体管(IGBT) IGBT PRODUCTS
960预期 2026/9/3
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 305 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies 绝缘栅双极晶体管(IGBT) 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
4,995预期 2026/10/1
最低: 1
倍数: 1
: 2,500

Si TO-252-3 SMD/SMT Single 600 V 2 V - 20 V, 20 V 11.7 A 51.7 W - 40 C + 175 C Trenchstop RC Reel, Cut Tape
Infineon Technologies 绝缘栅双极晶体管(IGBT) HOME APPLIANCES
5,999在途量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT Single 600 V 2 V - 20 V, 20 V 8 A 7.2 W - 40 C + 150 C Reel, Cut Tape, MouseReel