|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
¥53.6863
-
869库存量
-
新产品
|
Mouser 零件编号
726-IMT65R075M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
869库存量
|
|
|
¥53.6863
|
|
|
¥35.1543
|
|
|
¥25.8883
|
|
|
¥22.9955
|
|
|
¥20.3513
|
|
|
¥20.3513
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
|
TOLL-8
|
|
|
650 V
|
|
75 mOhms
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R075M2HXTMA1
- Infineon Technologies
-
1:
¥54.2626
-
791库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
791库存量
|
|
|
¥54.2626
|
|
|
¥36.4764
|
|
|
¥26.3064
|
|
|
¥24.3967
|
|
|
¥22.826
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
|
+ 175 C
|
124 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMLT65R075M2HXTMA1
- Infineon Technologies
-
1:
¥48.8047
-
771库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
771库存量
|
|
|
¥48.8047
|
|
|
¥32.5892
|
|
|
¥23.4136
|
|
|
¥19.7637
|
|
|
¥19.7637
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
34.7 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R075M2HXTMA1
- Infineon Technologies
-
1:
¥46.4882
-
643库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
643库存量
|
|
|
¥46.4882
|
|
|
¥30.9394
|
|
|
¥22.0802
|
|
|
¥20.9276
|
|
|
¥18.532
|
|
|
¥18.532
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
LHSOF-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
141 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R075M2HXKSA1
- Infineon Technologies
-
1:
¥59.9691
-
50库存量
-
480在途量
-
新产品
|
Mouser 零件编号
726-IMW65R075M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
50库存量
480在途量
|
|
|
¥59.9691
|
|
|
¥37.5499
|
|
|
¥30.6908
|
|
|
¥25.5606
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R075M2HXKSA1
- Infineon Technologies
-
1:
¥60.5454
-
218库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R075M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
218库存量
|
|
|
¥60.5454
|
|
|
¥34.7362
|
|
|
¥29.0297
|
|
|
¥26.3855
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R010M2HXTMA1
- Infineon Technologies
-
1:
¥197.524
-
256库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R010M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
256库存量
|
|
|
¥197.524
|
|
|
¥145.7474
|
|
|
¥131.0235
|
|
|
¥128.4584
|
|
|
¥111.418
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
158 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R026M2HXTMA1
- Infineon Technologies
-
1:
¥104.4685
-
950库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
950库存量
|
|
|
¥104.4685
|
|
|
¥72.6251
|
|
|
¥57.9012
|
|
|
¥54.3417
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
33 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R033M2HXTMA1
- Infineon Technologies
-
1:
¥87.1795
-
280库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
280库存量
|
|
|
¥87.1795
|
|
|
¥63.3591
|
|
|
¥55.4152
|
|
|
¥52.1947
|
|
|
¥45.1661
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R015M2HXUMA1
- Infineon Technologies
-
1:
¥126.0628
-
913库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R015M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
913库存量
|
|
|
¥126.0628
|
|
|
¥93.1346
|
|
|
¥85.9365
|
|
|
¥80.8176
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
94 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
499 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R020M2HXUMA1
- Infineon Technologies
-
1:
¥106.3782
-
528库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R020M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
528库存量
|
|
|
¥106.3782
|
|
|
¥78.0039
|
|
|
¥71.303
|
|
|
¥66.9977
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
97 A
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
¥84.7048
-
1,664库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
1,664库存量
|
|
|
¥84.7048
|
|
|
¥56.50
|
|
|
¥44.0022
|
|
|
¥41.358
|
|
|
¥41.358
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R010M2HXUMA1
- Infineon Technologies
-
1:
¥174.4494
-
671库存量
-
2,000在途量
-
新产品
|
Mouser 零件编号
726-IMT65R010M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
671库存量
2,000在途量
|
|
|
¥174.4494
|
|
|
¥126.8877
|
|
|
¥114.5594
|
|
|
¥110.514
|
|
|
¥107.7794
|
|
|
¥107.7794
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
168 A
|
13.1 mOhms
|
- 7V, + 23 V
|
4.5 V
|
113 nC
|
- 55 C
|
+ 175 C
|
681 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R026M2HXUMA1
- Infineon Technologies
-
1:
¥96.615
-
1,440库存量
-
新产品
|
Mouser 零件编号
726-IMT65R026M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,440库存量
|
|
|
¥96.615
|
|
|
¥66.3423
|
|
|
¥54.5112
|
|
|
¥52.771
|
|
|
¥51.2003
|
|
|
¥51.2003
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
81 A
|
33 mOhms
|
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
365 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R033M2HXUMA1
- Infineon Technologies
-
1:
¥86.4337
-
2,518库存量
-
新产品
|
Mouser 零件编号
726-IMT65R033M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
2,518库存量
|
|
|
¥86.4337
|
|
|
¥59.3024
|
|
|
¥45.3243
|
|
|
¥42.5106
|
|
|
¥42.5106
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R060M2HXUMA1
- Infineon Technologies
-
1:
¥54.918
-
1,048库存量
-
2,000预期 2027/5/25
-
新产品
|
Mouser 零件编号
726-IMT65R060M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,048库存量
2,000预期 2027/5/25
|
|
|
¥54.918
|
|
|
¥36.8945
|
|
|
¥26.6341
|
|
|
¥24.8148
|
|
|
¥23.8995
|
|
|
¥23.2441
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
41.4 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
208 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMTA65R026M2HXTMA1
- Infineon Technologies
-
1:
¥93.7222
-
1,968库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,968库存量
|
|
|
¥93.7222
|
|
|
¥63.0314
|
|
|
¥55.5847
|
|
|
¥50.5449
|
|
|
¥46.5673
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
79 A
|
33 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
- IMTA65R033M2HXTMA1
- Infineon Technologies
-
1:
¥80.3995
-
1,712库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
|
|
1,712库存量
|
|
|
¥80.3995
|
|
|
¥53.2682
|
|
|
¥41.1885
|
|
|
¥38.6234
|
|
|
¥38.6234
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
68 A
|
41 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥187.5122
-
276库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
276库存量
|
|
|
¥187.5122
|
|
|
¥122.2547
|
|
|
¥117.7008
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R060M2HXTMA1
- Infineon Technologies
-
1:
¥59.7996
-
416库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
416库存量
|
|
|
¥59.7996
|
|
|
¥40.4427
|
|
|
¥34.239
|
|
|
¥31.9338
|
|
|
¥26.0578
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
34.9 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
18 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R010M2HXUMA1
- Infineon Technologies
-
1:
¥187.8512
-
11库存量
-
2,250在途量
-
新产品
|
Mouser 零件编号
726-IMDQ65R010M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
11库存量
2,250在途量
在途量:
1,500 预期 2027/1/28
750 预期 2027/5/13
|
|
|
¥187.8512
|
|
|
¥139.3742
|
|
|
¥127.2945
|
|
|
¥115.9719
|
|
|
¥115.9719
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
154 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
113 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R050M2HXUMA1
- Infineon Technologies
-
1:
¥54.7598
-
44库存量
-
4,000预期 2027/5/31
-
新产品
|
Mouser 零件编号
726-IMT65R050M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
44库存量
4,000预期 2027/5/31
|
|
|
¥54.7598
|
|
|
¥38.6234
|
|
|
¥33.4141
|
|
|
¥30.5213
|
|
|
¥27.1313
|
|
|
¥27.1313
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
48.1 A
|
62 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
22 nC
|
- 55 C
|
+ 175 C
|
237 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥110.6722
-
69库存量
-
480预期 2026/6/29
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
69库存量
480预期 2026/6/29
|
|
|
¥110.6722
|
|
|
¥72.546
|
|
|
¥62.8619
|
|
|
¥58.3193
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
¥94.2985
-
237库存量
-
新产品
|
Mouser 零件编号
726-IMW65R033M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
237库存量
|
|
|
¥94.2985
|
|
|
¥57.2345
|
|
|
¥48.7143
|
|
|
¥48.477
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
¥67.1672
-
112库存量
-
720在途量
-
新产品
|
Mouser 零件编号
726-IMW65R060M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
112库存量
720在途量
在途量:
240 预期 2026/6/11
480 预期 2026/8/13
|
|
|
¥67.1672
|
|
|
¥40.9399
|
|
|
¥35.0752
|
|
|
¥30.2727
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
