|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMBG65R075M2HXTMA1
- Infineon Technologies
-
1:
¥60.2968
-
798库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
798库存量
|
|
|
¥60.2968
|
|
|
¥40.6913
|
|
|
¥29.5269
|
|
|
¥28.0353
|
|
|
¥26.216
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
|
+ 175 C
|
124 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMLT65R075M2HXTMA1
- Infineon Technologies
-
1:
¥54.1835
-
846库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
846库存量
|
|
|
¥54.1835
|
|
|
¥36.3973
|
|
|
¥26.216
|
|
|
¥22.7469
|
|
|
¥22.7469
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
34.7 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
¥55.3361
-
911库存量
-
新产品
|
Mouser 零件编号
726-IMT65R075M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
911库存量
|
|
|
¥55.3361
|
|
|
¥29.4478
|
|
|
¥26.8827
|
|
|
¥23.6622
|
|
|
¥23.6622
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
|
TOLL-8
|
|
|
650 V
|
|
75 mOhms
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R075M2HXTMA1
- Infineon Technologies
-
1:
¥54.0931
-
146库存量
-
2,000预期 2026/9/3
-
新产品
|
Mouser 零件编号
726-IMTA65R075M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
146库存量
2,000预期 2026/9/3
|
|
|
¥54.0931
|
|
|
¥32.5101
|
|
|
¥27.0522
|
|
|
¥22.1706
|
|
|
¥21.5039
|
|
|
¥21.5039
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
LHSOF-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
141 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R075M2HXKSA1
- Infineon Technologies
-
1:
¥69.5628
-
246库存量
-
240预期 2026/8/20
-
新产品
|
Mouser 零件编号
726-IMW65R075M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
246库存量
240预期 2026/8/20
|
|
|
¥69.5628
|
|
|
¥41.0303
|
|
|
¥34.4876
|
|
|
¥29.6964
|
|
|
¥29.4478
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R075M2HXKSA1
- Infineon Technologies
-
1:
¥67.2463
-
173库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R075M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
173库存量
|
|
|
¥67.2463
|
|
|
¥35.5724
|
|
|
¥32.6683
|
|
|
¥30.6908
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R020M2HXUMA1
- Infineon Technologies
-
1:
¥124.6503
-
1,930库存量
-
新产品
|
Mouser 零件编号
726-IMT65R020M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,930库存量
|
|
|
¥124.6503
|
|
|
¥87.5185
|
|
|
¥72.8737
|
|
|
¥67.9921
|
|
|
¥67.9921
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R010M2HXTMA1
- Infineon Technologies
-
1:
¥204.2249
-
256库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R010M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
256库存量
|
|
|
¥204.2249
|
|
|
¥141.6907
|
|
|
¥137.3063
|
|
|
¥137.2272
|
|
|
¥129.95
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
158 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R026M2HXTMA1
- Infineon Technologies
-
1:
¥116.2996
-
938库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
938库存量
|
|
|
¥116.2996
|
|
|
¥81.3148
|
|
|
¥66.5909
|
|
|
¥62.2065
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
33 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R033M2HXTMA1
- Infineon Technologies
-
1:
¥97.1122
-
280库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
280库存量
|
|
|
¥97.1122
|
|
|
¥70.8849
|
|
|
¥62.037
|
|
|
¥57.0763
|
|
|
¥51.6184
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R060M2HXTMA1
- Infineon Technologies
-
1:
¥66.4214
-
416库存量
-
新产品
|
Mouser 零件编号
726-IMBG65R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
416库存量
|
|
|
¥66.4214
|
|
|
¥40.4427
|
|
|
¥35.9001
|
|
|
¥33.6627
|
|
|
¥29.7755
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
34.9 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
18 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R015M2HXUMA1
- Infineon Technologies
-
1:
¥143.2614
-
901库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R015M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
901库存量
|
|
|
¥143.2614
|
|
|
¥106.3782
|
|
|
¥98.8411
|
|
|
¥92.3097
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
94 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
499 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R020M2HXUMA1
- Infineon Technologies
-
1:
¥136.5605
-
499库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R020M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
499库存量
|
|
|
¥136.5605
|
|
|
¥82.0493
|
|
|
¥77.5858
|
|
|
¥77.5858
|
|
最低： 1
倍数： 1
:
750
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
97 A
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
¥94.2081
-
909库存量
-
1,800预期 2026/11/5
-
新产品
|
Mouser 零件编号
726-IMLT65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
909库存量
1,800预期 2026/11/5
|
|
|
¥94.2081
|
|
|
¥65.0993
|
|
|
¥50.624
|
|
|
¥47.234
|
|
|
¥47.234
|
|
最低： 1
倍数： 1
:
1,800
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R010M2HXUMA1
- Infineon Technologies
-
1:
¥197.8517
-
835库存量
-
2,000预期 2027/3/4
-
新产品
|
Mouser 零件编号
726-IMT65R010M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
835库存量
2,000预期 2027/3/4
|
|
|
¥197.8517
|
|
|
¥142.6851
|
|
|
¥131.8484
|
|
|
¥123.1587
|
|
|
¥123.1587
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
168 A
|
13.1 mOhms
|
- 7V, + 23 V
|
4.5 V
|
113 nC
|
- 55 C
|
+ 175 C
|
681 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R033M2HXUMA1
- Infineon Technologies
-
1:
¥96.3664
-
2,301库存量
-
2,000预期 2027/8/5
-
新产品
|
Mouser 零件编号
726-IMT65R033M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
2,301库存量
2,000预期 2027/8/5
|
|
|
¥96.3664
|
|
|
¥66.67
|
|
|
¥52.1156
|
|
|
¥48.6352
|
|
|
¥48.6352
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R060M2HXUMA1
- Infineon Technologies
-
1:
¥60.9635
-
870库存量
-
2,000预期 2026/9/11
-
新产品
|
Mouser 零件编号
726-IMT65R060M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
870库存量
2,000预期 2026/9/11
|
|
|
¥60.9635
|
|
|
¥41.1885
|
|
|
¥29.945
|
|
|
¥28.4534
|
|
|
¥26.6341
|
|
|
¥26.6341
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
41.4 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
208 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMTA65R026M2HXTMA1
- Infineon Technologies
-
1:
¥102.9769
-
1,968库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
1,968库存量
|
|
|
¥102.9769
|
|
|
¥69.8114
|
|
|
¥63.9354
|
|
|
¥56.9859
|
|
|
¥53.1891
|
|
|
¥53.1891
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
79 A
|
33 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
- IMTA65R033M2HXTMA1
- Infineon Technologies
-
1:
¥89.5864
-
1,700库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
|
|
1,700库存量
|
|
|
¥89.5864
|
|
|
¥61.7093
|
|
|
¥53.0987
|
|
|
¥48.3075
|
|
|
¥44.2508
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
68 A
|
41 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥213.1632
-
259库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
259库存量
|
|
|
¥213.1632
|
|
|
¥136.1537
|
|
|
¥135.3288
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥123.2491
-
538库存量
-
240预期 2026/9/10
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
538库存量
240预期 2026/9/10
|
|
|
¥123.2491
|
|
|
¥75.0207
|
|
|
¥67.0881
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
¥106.8641
-
203库存量
-
新产品
|
Mouser 零件编号
726-IMW65R033M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
203库存量
|
|
|
¥106.8641
|
|
|
¥64.2744
|
|
|
¥55.6638
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
¥74.6139
-
992库存量
-
新产品
|
Mouser 零件编号
726-IMW65R060M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
992库存量
|
|
|
¥74.6139
|
|
|
¥43.5954
|
|
|
¥36.725
|
|
|
¥36.6459
|
|
|
¥34.7362
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R020M2HXTMA1
- Infineon Technologies
-
1:
¥120.684
-
10,336库存量
|
Mouser 零件编号
726-IMTA65R020M2HXTM
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
10,336库存量
|
|
|
¥120.684
|
|
|
¥84.5353
|
|
|
¥69.8905
|
|
|
¥65.2575
|
|
|
¥65.2575
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
20 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R007M2HXKSA1
- Infineon Technologies
-
1:
¥289.7546
-
1,004库存量
|
Mouser 零件编号
726-IMZA65R007M2HXKS
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,004库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
210 A
|
8.5 mOhms
|
- 18 V, + 18 V
|
5.6 V
|
439 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
CoolSiC
|
|
