CoolSiC™ 650 V G2碳化硅MOSFET

英飞凌科技CoolSiC™ 650V G2碳化硅MOSFET利用 碳化硅的性能能力,降低能量损耗,从而在电源转换过程中实现更高的效率。 英飞凌CoolSiC 650V G2 MOSFET为光伏、储能、直流电动汽车充电、电机驱动器和工业电源等各种功率半导体应用带来优势。配备CoolSiC G2的电动汽车DC快速充电站与上一代产品相比,功率损耗可减少10%,同时在不影响外形因子的前提下,实现更高的充电容量。

结果: 53
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Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2 10库存量
720在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,292库存量
1,800预期 2027/1/28
最低: 1
倍数: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 15 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,733库存量
最低: 1
倍数: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 20 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,262库存量
最低: 1
倍数: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,771库存量
最低: 1
倍数: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 50 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 1,763库存量
最低: 1
倍数: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 630库存量
10,000在途量
最低: 1
倍数: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 20 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 570库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 303库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 146库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 32库存量
240预期 2027/5/25
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 191库存量
720预期 2026/6/11
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 7库存量
960在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 251库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 5库存量
2,000预期 2026/12/24
最低: 1
倍数: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2 11库存量
720在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2 33库存量
240在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
1,450在途量
最低: 1
倍数: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies 碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
4,396在途量
最低: 1
倍数: 1
: 1,800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
4,000预期 2027/2/25
最低: 1
倍数: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
2,000预期 2026/6/11
最低: 1
倍数: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
3,972预期 2026/12/31
最低: 1
倍数: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
15,600在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
1,200在途量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET
480预期 2027/6/10
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC