|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R007M2HXUMA1
- Infineon Technologies
-
1:
¥235.6615
-
258库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R007M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
258库存量
|
|
|
¥235.6615
|
|
|
¥196.9477
|
|
|
¥172.3024
|
|
|
¥172.3024
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
196 A
|
8.5 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
179 nC
|
- 55 C
|
+ 175 C
|
937 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R015M2HXUMA1
- Infineon Technologies
-
1:
¥133.4982
-
447库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R015M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
447库存量
|
|
|
¥133.4982
|
|
|
¥103.3159
|
|
|
¥89.3378
|
|
|
¥89.2474
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
94 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
499 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMDQ65R020M2HXUMA1
- Infineon Technologies
-
1:
¥110.4236
-
624库存量
-
新产品
|
Mouser 零件编号
726-IMDQ65R020M2HXUM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
624库存量
|
|
|
¥110.4236
|
|
|
¥82.4674
|
|
|
¥71.3821
|
|
|
¥67.574
|
|
|
¥57.2345
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
97 A
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
394 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R026M2HXTMA1
- Infineon Technologies
-
1:
¥92.2306
-
1,048库存量
-
1,800预期 2026/2/20
-
新产品
|
Mouser 零件编号
726-IMLT65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
1,048库存量
1,800预期 2026/2/20
|
|
|
¥92.2306
|
|
|
¥72.1279
|
|
|
¥60.1386
|
|
|
¥53.5959
|
|
|
¥45.4938
|
|
|
¥45.4147
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
82 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
365 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
¥79.1565
-
1,676库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
1,676库存量
|
|
|
¥79.1565
|
|
|
¥58.8956
|
|
|
¥49.0533
|
|
|
¥43.7536
|
|
|
¥38.9624
|
|
|
¥38.872
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMLT65R040M2HXTMA1
- Infineon Technologies
-
1:
¥63.8563
-
1,627库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R040M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,627库存量
|
|
|
¥63.8563
|
|
|
¥43.5954
|
|
|
¥33.335
|
|
|
¥27.3008
|
|
|
¥27.2104
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
|
40 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMLT65R060M2HXTMA1
- Infineon Technologies
-
1:
¥48.3075
-
1,783库存量
-
新产品
|
Mouser 零件编号
726-IMLT65R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,783库存量
|
|
|
¥48.3075
|
|
|
¥36.4764
|
|
|
¥29.5269
|
|
|
¥26.216
|
|
|
¥23.3232
|
|
|
¥23.2441
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
|
60 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R020M2HXUMA1
- Infineon Technologies
-
1:
¥104.2199
-
682库存量
-
新产品
|
Mouser 零件编号
726-IMT65R020M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
682库存量
|
|
|
¥104.2199
|
|
|
¥77.8344
|
|
|
¥67.3254
|
|
|
¥63.7772
|
|
|
¥63.6868
|
|
|
¥54.014
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R026M2HXUMA1
- Infineon Technologies
-
1:
¥92.9764
-
1,960库存量
-
新产品
|
Mouser 零件编号
726-IMT65R026M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,960库存量
|
|
|
¥92.9764
|
|
|
¥72.7946
|
|
|
¥60.6358
|
|
|
¥54.0931
|
|
|
¥54.014
|
|
|
¥45.8215
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
81 A
|
33 mOhms
|
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
365 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R040M2HXUMA1
- Infineon Technologies
-
1:
¥64.4326
-
1,868库存量
-
新产品
|
Mouser 零件编号
726-IMT65R040M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,868库存量
|
|
|
¥64.4326
|
|
|
¥45.4938
|
|
|
¥37.8889
|
|
|
¥34.0808
|
|
|
¥28.8715
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
58.7 A
|
49 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
28 nC
|
- 55 C
|
+ 175 C
|
277 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥179.7378
-
348库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
348库存量
|
|
|
¥179.7378
|
|
|
¥153.2732
|
|
|
¥132.5942
|
|
|
¥132.5151
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R015M2HXKSA1
- Infineon Technologies
-
1:
¥138.5493
-
480库存量
-
240预期 2026/6/18
-
新产品
|
Mouser 零件编号
726-IMW65R015M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
480库存量
240预期 2026/6/18
|
|
|
¥138.5493
|
|
|
¥110.9208
|
|
|
¥95.8692
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
93 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
341 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R020M2HXKSA1
- Infineon Technologies
-
1:
¥114.0622
-
122库存量
-
240预期 2026/8/20
-
新产品
|
Mouser 零件编号
726-IMW65R020M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
122库存量
240预期 2026/8/20
|
|
|
¥114.0622
|
|
|
¥69.5628
|
|
|
¥61.1217
|
|
|
¥60.2177
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
83 A
|
24 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
57 nC
|
- 55 C
|
+ 175 C
|
273 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥100.6604
-
380库存量
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
380库存量
|
|
|
¥100.6604
|
|
|
¥81.9702
|
|
|
¥68.3198
|
|
|
¥60.794
|
|
|
¥51.6184
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R050M2HXKSA1
- Infineon Technologies
-
1:
¥65.427
-
394库存量
-
新产品
|
Mouser 零件编号
726-IMW65R050M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
394库存量
|
|
|
¥65.427
|
|
|
¥38.0471
|
|
|
¥32.092
|
|
|
¥29.0297
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
62 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
22 nC
|
- 55 C
|
+ 175 C
|
153 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMZA65R010M2HXKSA1
- Infineon Technologies
-
1:
¥176.0201
-
243库存量
-
480预期 2026/2/16
-
新产品
|
Mouser 零件编号
726-IMZA65R010M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
243库存量
480预期 2026/2/16
|
|
|
¥176.0201
|
|
|
¥111.4971
|
|
|
¥105.2143
|
|
|
¥105.1352
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
144 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R015M2HXKSA1
- Infineon Technologies
-
1:
¥137.5549
-
1,063库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R015M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,063库存量
|
|
|
¥137.5549
|
|
|
¥85.2811
|
|
|
¥76.7609
|
|
|
¥76.6818
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
103 A
|
18 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
79 nC
|
- 55 C
|
+ 175 C
|
341 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R050M2HXKSA1
- Infineon Technologies
-
1:
¥67.6644
-
361库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R050M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
361库存量
|
|
|
¥67.6644
|
|
|
¥39.5387
|
|
|
¥33.335
|
|
|
¥30.3518
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
62 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
22 nC
|
- 55 C
|
+ 175 C
|
153 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
¥60.9635
-
262库存量
-
新产品
|
Mouser 零件编号
726-IMW65R060M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
262库存量
|
|
|
¥60.9635
|
|
|
¥43.0078
|
|
|
¥35.9001
|
|
|
¥31.9338
|
|
|
查看
|
|
|
¥28.4534
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMZA65R060M2HXKSA1
- Infineon Technologies
-
1:
¥63.6868
-
299库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R060M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
299库存量
|
|
|
¥63.6868
|
|
|
¥44.9966
|
|
|
¥37.4708
|
|
|
¥33.335
|
|
|
¥29.6964
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R040M2HXTMA1
- Infineon Technologies
-
1:
¥60.4663
-
343库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R040M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
343库存量
|
|
|
¥60.4663
|
|
|
¥42.6801
|
|
|
¥35.5724
|
|
|
¥31.9338
|
|
|
¥27.0522
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
40 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R050M2HXTMA1
- Infineon Technologies
-
1:
¥51.4489
-
333库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R050M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
333库存量
|
|
|
¥51.4489
|
|
|
¥39.4596
|
|
|
¥31.9338
|
|
|
¥28.3743
|
|
|
¥27.459
|
|
|
¥23.2441
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
50 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R060M2HXTMA1
- Infineon Technologies
-
1:
¥48.7143
-
276库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R060M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
276库存量
|
|
|
¥48.7143
|
|
|
¥34.0808
|
|
|
¥27.5494
|
|
|
¥24.4871
|
|
|
¥24.1481
|
|
|
¥20.4304
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
60 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMT65R015M2HXUMA1
- Infineon Technologies
-
1:
¥127.3849
-
1,996预期 2027/2/3
-
新产品
|
Mouser 零件编号
726-IMT65R015M2HXUMA
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,996预期 2027/2/3
|
|
|
¥127.3849
|
|
|
¥98.5925
|
|
|
¥91.0667
|
|
|
¥79.9814
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
131 A
|
18 mOhms
|
- 7 V to 23 V
|
4.5 V
|
148 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMTA65R020M2HXTMA1
- Infineon Technologies
-
1:
¥102.0729
-
3,999预期 2026/7/9
-
新产品
|
Mouser 零件编号
726-IMTA65R020M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
3,999预期 2026/7/9
|
|
|
¥102.0729
|
|
|
¥71.303
|
|
|
¥61.5398
|
|
|
¥54.014
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
|
|
20 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
