|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥192.891
-
922库存量
-
新产品
|
Mouser 零件编号
511-SCT016H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
922库存量
|
|
|
¥192.891
|
|
|
¥139.4646
|
|
|
¥139.3742
|
|
|
¥139.216
|
|
|
¥113.7345
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
¥206.8691
-
274库存量
-
600预期 2026/3/9
-
新产品
|
Mouser 零件编号
511-SCT011HU75G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
274库存量
600预期 2026/3/9
|
|
|
¥206.8691
|
|
|
¥152.0302
|
|
|
¥151.9511
|
|
|
¥124.1531
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥171.6357
-
640库存量
-
新产品
|
Mouser 零件编号
511-SCT012W90G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640库存量
|
|
|
¥171.6357
|
|
|
¥146.3237
|
|
|
¥126.56
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥169.6469
-
739库存量
-
新产品
|
Mouser 零件编号
511-SCT020HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
739库存量
|
|
|
¥169.6469
|
|
|
¥140.5381
|
|
|
¥121.5089
|
|
|
¥112.7401
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥157.9853
-
513库存量
-
新产品
|
Mouser 零件编号
511-SCT020W120G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513库存量
|
|
|
¥157.9853
|
|
|
¥130.3568
|
|
|
¥129.2833
|
|
|
¥127.0572
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥149.3069
-
502库存量
-
新产品
|
Mouser 零件编号
511-SCT025W120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502库存量
|
|
|
¥149.3069
|
|
|
¥119.5201
|
|
|
¥103.3159
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥111.7457
-
1,011库存量
-
600预期 2027/1/4
-
新产品
|
Mouser 零件编号
511-SCT040HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,011库存量
600预期 2027/1/4
|
|
|
¥111.7457
|
|
|
¥78.2525
|
|
|
¥68.9865
|
|
|
¥67.6644
|
|
|
¥58.4775
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
¥141.9393
-
14库存量
-
2,000预期 2026/10/12
-
新产品
|
Mouser 零件编号
511-SCT025H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
14库存量
2,000预期 2026/10/12
|
|
|
¥141.9393
|
|
|
¥100.7508
|
|
|
¥94.0499
|
|
|
¥76.7609
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥169.9859
-
160库存量
|
Mouser 零件编号
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
160库存量
|
|
|
¥169.9859
|
|
|
¥122.0852
|
|
|
¥118.6161
|
|
|
¥96.8636
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥107.8585
-
629库存量
|
Mouser 零件编号
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
629库存量
|
|
|
¥107.8585
|
|
|
¥75.4388
|
|
|
¥57.0763
|
|
|
¥53.9349
|
|
|
¥53.8445
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥104.8866
-
142库存量
|
Mouser 零件编号
511-SCT040HU65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
142库存量
|
|
|
¥104.8866
|
|
|
¥73.5291
|
|
|
¥63.9354
|
|
|
¥52.2738
|
|
|
¥52.1947
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
40 mOhms
|
- 30 V, + 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥112.9096
-
73库存量
-
1,200预期 2026/2/27
|
Mouser 零件编号
511-SCT070HU120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73库存量
1,200预期 2026/2/27
|
|
|
¥112.9096
|
|
|
¥79.0774
|
|
|
¥69.9809
|
|
|
¥57.0763
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥142.267
-
593库存量
|
Mouser 零件编号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593库存量
|
|
|
¥142.267
|
|
|
¥88.253
|
|
|
¥77.0886
|
|
|
¥77.0095
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
¥145.2502
-
90库存量
|
Mouser 零件编号
511-SCTWA40N12G24AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90库存量
|
|
|
¥145.2502
|
|
|
¥103.2255
|
|
|
¥79.5746
|
|
|
¥79.0774
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥200.4168
-
600预期 2026/7/27
|
Mouser 零件编号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600预期 2026/7/27
|
|
|
¥200.4168
|
|
|
¥164.0308
|
|
|
¥144.8321
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥150.29
-
1,200在途量
|
Mouser 零件编号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200在途量
在途量:
600 预期 2026/5/1
600 预期 2026/9/14
|
|
|
¥150.29
|
|
|
¥120.3563
|
|
|
¥104.0617
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
¥104.8866
-
996预期 2026/4/22
|
Mouser 零件编号
511-SCT040H120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996预期 2026/4/22
|
|
|
¥104.8866
|
|
|
¥73.5291
|
|
|
¥63.9354
|
|
|
¥63.8563
|
|
|
¥52.1947
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
¥103.4741
-
1,113预期 2026/2/23
|
Mouser 零件编号
511-SCT055HU65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113预期 2026/2/23
|
|
|
¥103.4741
|
|
|
¥72.9528
|
|
|
¥63.28
|
|
|
¥51.6975
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
¥138.7979
-
100在途量
-
新产品
|
Mouser 零件编号
511-SCT025H120G3-7
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100在途量
|
|
|
¥138.7979
|
|
|
¥107.3613
|
|
|
¥92.8069
|
|
|
¥92.8069
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
¥94.129
-
100在途量
-
新产品
|
Mouser 零件编号
511-SCT040W120G3-4
新产品
|
STMicroelectronics
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碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
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100在途量
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¥94.129
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¥76.6818
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¥63.8563
|
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¥56.9068
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¥48.3075
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最低： 1
倍数： 1
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Through Hole
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HiP247-4
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N-Channel
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1 Channel
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1.2 kV
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40 A
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54 mOhms
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- 10 V, + 22 V
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3.1 V
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56 nC
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- 55 C
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+ 200 C
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312 W
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Enhancement
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AEC-Q101
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碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
¥149.2165
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无库存交货期 32 周
-
NRND
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Mouser 零件编号
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
无库存交货期 32 周
|
|
|
¥149.2165
|
|
|
¥113.6554
|
|
|
¥95.5415
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|
最低： 1
倍数： 1
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Through Hole
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HiP247-3
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N-Channel
|
1 Channel
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1.2 kV
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36 A
|
100 mOhms
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- 10 V, + 22 V
|
2.45 V
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61 nC
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- 55 C
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+ 200 C
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278 W
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Enhancement
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