最新MOSFET

PANJIT 50V Enhancement Mode MOSFETs
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
PANJIT 60V Automotive P-Channel MOSFETs
PANJIT 60V Automotive P-Channel MOSFETs
04/21/2025
Advanced trench process technology minimizes RDS(ON) while maximizing avalanche ruggedness.
PANJIT 80V & 100V Shield Gate Trench N-Channel MOSFETs
PANJIT 80V & 100V Shield Gate Trench N-Channel MOSFETs
02/17/2025
Shield gate trench (SGT) MOSFETs featuring a low RDS(ON) and a high switching speed.
PANJIT PSMB033N10NS2 100V N-Channel MOSFET
PANJIT PSMB033N10NS2 100V N-Channel MOSFET
09/04/2024
Features a high switching speed and low reverse transfer capacitance.
PANJIT 60/100/150V Automotive-Grade MOSFETs
PANJIT 60/100/150V Automotive-Grade MOSFETs
09/03/2024
Family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs.
PANJIT 150V N-Channel Automotive MOSFETs
PANJIT 150V N-Channel Automotive MOSFETs
08/29/2024
Optimized to have excellent FOM and AEC-Q101 qualified with standard-level gate drive.
PANJIT 150V N-Channel Enhancement-Mode MOSFETs
PANJIT 150V N-Channel Enhancement-Mode MOSFETs
08/29/2024
Features a high switching speed and operates from 4A to 125A continuous drain current.
PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs
PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs
06/20/2024
Designed with logic level gate drive and are ideal for automotive applications.
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
06/20/2024
Reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature.
PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs
PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs
10/16/2023
Feature a -30V drain-source voltage, ±25V gate-source voltage, and 3W power dissipation @TC=25°C.
PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET
PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET
10/16/2023
Features a -30V drain-source voltage, ±25V gate-source voltage, and 30W power dissipation @TC=25°C.
PANJIT 100V N-Channel Enhancement Mode MOSFETs
PANJIT 100V N-Channel Enhancement Mode MOSFETs
08/15/2023
Feature low RDS(ON) and high switching speed.
PANJIT 40V Enhancement Mode MOSFETs
PANJIT 40V Enhancement Mode MOSFETs
06/06/2023
Low-voltage MOSFETs with an on-resistance of under 1Ω.
PANJIT 60V N-Channel Enhancement Mode MOSFETs
PANJIT 60V N-Channel Enhancement Mode MOSFETs
05/30/2023
Offers a low reverse transfer capacitance in an AEC-Q101-qualified, DFN5060-8L package.
PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs
PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs
11/16/2022
Utilize Trench technology to improve the product characteristics.
PANJIT 60V P-Channel Enhancement Mode MOSFETs
PANJIT 60V P-Channel Enhancement Mode MOSFETs
07/08/2022
Features advanced Trench Process technology and optimized for use as relay drivers and line drivers.
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IXYS X4-Class Power MOSFETs
IXYS X4-Class Power MOSFETs
02/02/2026
Offer low on-state resistance and conduction losses, with improved efficiency.
onsemi NVBYST0D6N08X 80 V N沟道功率MOSFET
onsemi NVBYST0D6N08X 80 V N沟道功率MOSFET
12/26/2025
该器件具有低QRR和软恢复体二极管,采用TCPAK1012 (TopCool) 封装。
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
12/23/2025
凭借广泛的产品组合确立了行业性能基准。
onsemi NVMFD5877NL双N沟道MOSFET
onsemi NVMFD5877NL双N沟道MOSFET
12/19/2025
专为紧凑高效的设计而打造,具有优异的热性能。
onsemi FDC642P-F085小信号MOSFET
onsemi FDC642P-F085小信号MOSFET
11/25/2025
采用高性能沟槽技术,具备极低RDS(on)和快速开关速度。
onsemi NTTFS007P02P8 P沟道低/中压MOSFET
onsemi NTTFS007P02P8 P沟道低/中压MOSFET
11/25/2025
采用PowerTrench技术打造,具备极低RDS(on)、快速开关性能及耐用性。
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs
11/24/2025
Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.
onsemi NVD6824NL单N沟道MOSFET
onsemi NVD6824NL单N沟道MOSFET
11/20/2025
具备低RDS(on),可将导通损耗降至最低,同时兼具大电流能力。
onsemi NVD5867NL单N沟道功率MOSFET
onsemi NVD5867NL单N沟道功率MOSFET
11/20/2025
具有60V漏源电压、39mΩ漏源导通电阻,并通过AEC-Q101认证。
onsemi NVMFS5832NL单N沟道功率MOSFET
onsemi NVMFS5832NL单N沟道功率MOSFET
11/19/2025
专为低电压应用设计的高性能MOSFET,可实现高效的电源切换。
onsemi NVMFS5830NL单N沟道功率MOSFET
onsemi NVMFS5830NL单N沟道功率MOSFET
11/19/2025
一款高效的单N沟道功率MOSFET,专为高要求电源管理应用而设计。
Diodes Incorporated 2N7002 N沟道增强模式场效应晶体管
Diodes Incorporated 2N7002 N沟道增强模式场效应晶体管
10/31/2025
具有快速开关性能和低栅极电荷特性,最大漏源电压为60V。
Diodes Incorporated DMTH64M2LPDW双N沟道增强模式MOSFET
Diodes Incorporated DMTH64M2LPDW双N沟道增强模式MOSFET
10/31/2025
将两个MOSFET集成到单个PowerDI® 5mm x 6mm封装中,具有优异的散热性能。
Diodes Incorporated DMN1057UCA3 N沟道增强模式MOSFET
Diodes Incorporated DMN1057UCA3 N沟道增强模式MOSFET
10/21/2025
具有卓越的开关性能,非常适合高效电源管理应用。
Toshiba TPH2R70AR5 N沟道MOSFET
Toshiba TPH2R70AR5 N沟道MOSFET
10/17/2025
该器件适用于高功效的直流-直流转换器,采用SOP Advance (N)封装。
ROHM Semiconductor RD3x汽车N沟道功率MOSFET
ROHM Semiconductor RD3x汽车N沟道功率MOSFET
10/16/2025
AEC-Q101 MOSFET具有正向电压低、恢复时间快、浪涌能力高等特性。
onsemi NTK3139P P沟道单通道功率MOSFET
onsemi NTK3139P P沟道单通道功率MOSFET
10/14/2025
封装占位面积比SC-89小44%,厚度比SC-89薄38%。
onsemi NVNJWS200N031L单N沟道功率MOSFET
onsemi NVNJWS200N031L单N沟道功率MOSFET
10/14/2025
该器件具有低RDS(on) 和低栅极阈值特性,采用可湿性侧翼封装。
IXYS MMIX1T500N20X4 200V X4-Class 功率MOSFET
IXYS MMIX1T500N20X4 200V X4-Class 功率MOSFET
10/08/2025
基于陶瓷的隔离封装提高了整体Rth(j-s) 和功率处理能力。
onsemi T10低/中压MOSFET
onsemi T10低/中压MOSFET
10/06/2025
40V和80V单通道N沟道MOSFET,具备更优性能与更高系统效率。 
Infineon Technologies OptiMOS™ 7优化40V功率MOSFET
Infineon Technologies OptiMOS™ 7优化40V功率MOSFET
10/02/2025
为驱动器、电源和园艺工具中的高效电源转换提供定制解决方案。
Infineon Technologies N沟道OptiMOS™ 7功率MOSFET
Infineon Technologies N沟道OptiMOS™ 7功率MOSFET
09/30/2025
高性能N沟道晶体管专为要求苛刻的电源转换应用而设计。
Nexperia MLPAK33-WF封装的BUK7Q N沟道MOSFET
Nexperia MLPAK33-WF封装的BUK7Q N沟道MOSFET
09/29/2025
采用沟槽9技术,符合AEC-Q101要求。
Nexperia BUK9Q N沟道沟槽MOSFET
Nexperia BUK9Q N沟道沟槽MOSFET
09/09/2025
逻辑级兼容,开关速度快,完全符合AEC-Q101标准,工作温度为175°C。
onsemi NTK3134N单N沟道功率MOSFET
onsemi NTK3134N单N沟道功率MOSFET
09/08/2025
优化用于高效开关应用的强大20V、890mA N沟道功率MOSFET。
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