RF晶体管

结果: 919
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 安装风格 封装 / 箱体 晶体管类型 技术 工作频率 输出功率 最小工作温度 最大工作温度 增益 资格 封装
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G2729L-350/SOT502/TRAY

RF MOSFETs Screw Mount SOT502A-3 LDMOS 2.7 GHz to 2.9 GHz 350 W + 225 C 14 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G2729LS-350/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502B-3 LDMOS 2.7 GHz to 2.9 GHz 350 W + 225 C 14 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G2731LS-400/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502B-3 LDMOS 2.7 GHz to 3.1 GHz 400 W + 225 C 13 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G2934L-400/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502A-3 LDMOS 2.9 GHz to 3.4 GHz 400 W + 225 C 11 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G2934LS-400/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502B-3 LDMOS 2.9 GHz to 3.4 GHz 400 W + 225 C 11 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G3135L-400/SOT502/TRAY

RF MOSFETs Screw Mount SOT502A-3 LDMOS 3.1 GHz to 3.5 GHz 400 W + 225 C 11 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G3135LS-115/SOT1135/TRAY

RF MOSFETs SMD/SMT SOT1135B-3 LDMOS 3.1 GHz to 3.5 GHz 115 W + 225 C 14 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLS9G3135LS-400/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502B-3 LDMOS 3.1 GHz to 3.5 GHz 400 W + 225 C 11 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLU9H0408L-800P/SOT539/TRAY

RF MOSFETs SMD/SMT SOT539A-5 LDMOS 400 MHz to 800 MHz 800 W + 225 C 20.5 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLF24H4LS300P/SOT1214/REEL

RF MOSFETs SMD/SMT SOT1214B-5 GaN SiC 2.4 GHz to 2.5 GHz 300 W + 225 C 16 dB Reel, Cut Tape, MouseReel
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLL3H0914L-700/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502A-3 GaN SiC 900 MHz to 1.4 GHz 700 W + 225 C 17 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLL3H0914LS-700/SOT502/TRAY

RF MOSFETs SMD/SMT SOT502B-3 GaN SiC 900 MHz to 1.4 GHz 700 W + 225 C 17 dB Tray
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLP24H4S30P/DFN-6.5X7/REEL

RF MOSFETs SMD/SMT DFN-6 GaN SiC 2.4 GHz to 2.5 GHz 30 W + 225 C 18.4 dB Reel
CML Micro 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band Linear Amplifier and Oscillator Applications

RF MOSFET Transistors Die GaAs 26 GHz 21 dBm + 150 C 15 dB Bulk
STMicroelectronics RF5L051K0CB4
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 1 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor

RF MOSFET Transistors Si Tray
STMicroelectronics RF5L051K5CB4
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.5 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor

RF MOSFET Transistors Si Tray
STMicroelectronics RF5L052K0CB4
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 2 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor

RF MOSFET Transistors Si Tray
STMicroelectronics RF5L05500CB4
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 550 W, 50 V, HF to 250 MHz RF Power LDMOS transistor

RF MOSFET Transistors Si Reel
STMicroelectronics RF5L05750CF2
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, HF to 500 MHz RF power LDMOS transistor

RF MOSFET Transistors Si Reel
STMicroelectronics RF5L05950CF2
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

RF MOSFET Transistors Si Reel
STMicroelectronics SD2931-14
STMicroelectronics 射频金属氧化物半导体场效应(RF MOSFET)晶体管 .500 DIA 4-L W/FLG
RF MOSFET Transistors Si Bulk
Microchip Technology DRF1310
Microchip Technology 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 500 V 2000 W 30 MHz T4
RF MOSFETs Si 30 MHz
Microchip Technology DRF1310-CLASS-D
Microchip Technology 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 13.56 MHz Reference Design Kit
RF MOSFETs
Diodes Incorporated 2DB1188QQ-13
Diodes Incorporated 射频(RF)双极晶体管 Pwr Mid Perf Transistor SOT89 T&R 2.5K

RF Bipolar Transistors Reel, Cut Tape, MouseReel
MACOM CGHV1J070D-GP5
MACOM 射频结栅场效应晶体管(RF JFET)晶体管 DIE, 70W, 18.0GHz, GaN HEMT, GP5, 510438

RF JFET Transistors