|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART700FH/SOT1214/TRAY
- ART700FHU
- Ampleon
-
1:
¥1,748.2004
-
90库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-ART700FHU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART700FH/SOT1214/TRAY
|
|
90库存量
|
|
|
¥1,748.2004
|
|
|
¥1,467.6327
|
|
|
¥1,412.6243
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
55 V
|
171 mOhms
|
1 MHz to 450 MHz
|
28.6 dB
|
700 W
|
|
+ 225 C
|
Screw Mount
|
SOT1214A-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
- B11G2327N71DYZ
- Ampleon
-
1:
¥576.6164
-
313库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-B11G2327N71DYZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
|
|
313库存量
|
|
|
¥576.6164
|
|
|
¥477.6849
|
|
|
¥453.6159
|
|
|
¥451.1299
|
|
|
¥429.626
|
|
最低: 1
倍数: 1
:
300
|
|
|
|
LDMOS
|
|
65 V
|
|
2.3 GHz to 2.7 GHz
|
33.5 dB
|
49.5 dBm
|
|
+ 200 C
|
SMD/SMT
|
QFN-36
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLA9H0912L-1200P/SOT539/TRAY
- BLA9H0912L-1200PU
- Ampleon
-
1:
¥5,274.5462
-
125库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLA9H0912L-1200PU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLA9H0912L-1200P/SOT539/TRAY
|
|
125库存量
|
|
|
¥5,274.5462
|
|
|
¥5,274.0603
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
50 V
|
60 mOhms
|
960 MHz to 1.215 GHz
|
19 dB
|
1.2 kW
|
|
+ 225 C
|
Screw Mount
|
SOT539A-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS500P/SOT1250/TRAYD
- BLC2425M10LS500PZ
- Ampleon
-
1:
¥1,874.0146
-
105库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLC2425M10LS500PZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS500P/SOT1250/TRAYD
|
|
105库存量
|
|
|
¥1,874.0146
|
|
|
¥1,550.0097
|
|
|
¥1,508.4935
|
|
最低: 1
倍数: 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
45.5 mOhms
|
2.4 GHz to 2.5 GHz
|
14.5 dB
|
500 W
|
|
+ 225 C
|
SMD/SMT
|
SOT1250-1-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
- BLF647P,112
- Ampleon
-
1:
¥1,876.9074
-
183库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLF647P112
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
|
|
183库存量
|
|
|
¥1,876.9074
|
|
|
¥1,605.3571
|
|
|
¥1,564.824
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Dual N-Channel
|
LDMOS
|
100 mA
|
65 V
|
140 mOhms
|
1.5 GHz
|
18 dB
|
200 W
|
|
+ 225 C
|
SMD/SMT
|
SOT-1121A-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF974P/SOT539/TRAY
- BLF974PU
- Ampleon
-
1:
¥1,854.33
-
143库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLF974PU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF974P/SOT539/TRAY
|
|
143库存量
|
|
|
¥1,854.33
|
|
|
¥1,533.2292
|
|
|
¥1,531.7376
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
50 V
|
110 mOhms
|
700 MHz
|
25.7 dB
|
500 W
|
|
+ 225 C
|
Screw Mount
|
SOT539A-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLL9G1214L-600/SOT502/TRAY
- BLL9G1214L-600U
- Ampleon
-
1:
¥2,480.237
-
115库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLL9G1214L-600U
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLL9G1214L-600/SOT502/TRAY
|
|
115库存量
|
|
|
¥2,480.237
|
|
|
¥2,136.1407
|
|
|
¥2,109.0094
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
LDMOS
|
|
65 V
|
26 mOhms
|
1.2 GHz to 1.4 GHz
|
19 dB
|
600 W
|
|
+ 225 C
|
Screw Mount
|
SOT502A-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLF3H0035S-100/SOT467B/TRAY
- CLF3H0035S-100U
- Ampleon
-
1:
¥2,434.9918
-
60库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-CLF3H0035S-100U
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLF3H0035S-100/SOT467B/TRAY
|
|
60库存量
|
|
|
¥2,434.9918
|
|
|
¥2,030.2597
|
|
|
¥1,996.0207
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
GaN Si
|
|
50 V
|
240 mOhms
|
0 Hz to 3.5 GHz
|
15 dB
|
100 W
|
|
+ 300 C
|
SMD/SMT
|
SOT467B-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460AG
- Microchip Technology
-
1:
¥468.6675
-
85库存量
|
Mouser 零件编号
494-ARF460AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
85库存量
|
|
|
¥468.6675
|
|
|
¥396.5396
|
|
|
¥378.4257
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
14 A
|
500 V
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
- ARF463AP1G
- Microchip Technology
-
1:
¥372.4706
-
400库存量
|
Mouser 零件编号
494-ARF463AP1G
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
|
|
400库存量
|
|
|
¥372.4706
|
|
|
¥351.8707
|
|
|
¥351.6221
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
9 A
|
500 V
|
|
100 MHz
|
15 dB
|
100 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
- ARF475FL
- Microchip Technology
-
1:
¥1,244.13
-
19库存量
|
Mouser 零件编号
494-ARF475FL
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
|
|
19库存量
|
|
|
¥1,244.13
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
10 A
|
500 V
|
|
150 MHz
|
15 dB
|
900 W
|
- 55 C
|
+ 175 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 300 W 150 MHz M177
- VRF2933
- Microchip Technology
-
1:
¥1,364.3959
-
23库存量
|
Mouser 零件编号
494-VRF2933
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 300 W 150 MHz M177
|
|
23库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
42 A
|
180 V
|
|
30 MHz
|
25 dB
|
300 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
- MRFX1K80HR5
- NXP Semiconductors
-
1:
¥3,646.736
-
111库存量
-
250预期 2026/6/22
-
寿命结束
|
Mouser 零件编号
771-MRFX1K80HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 65V LDMOS Transistor
|
|
111库存量
250预期 2026/6/22
|
|
|
¥3,646.736
|
|
|
¥3,160.6213
|
|
|
¥3,039.2028
|
|
|
¥2,965.9901
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
43 A
|
179 V
|
|
1.8 MHz to 400 MHz
|
25.1 dB
|
1.8 kW
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-1230H-4
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
- AFM907NT1
- NXP Semiconductors
-
1:
¥56.8955
-
6,000库存量
-
4,000预期 2026/6/25
-
寿命结束
|
Mouser 零件编号
841-AFM907NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power
|
|
6,000库存量
4,000预期 2026/6/25
|
|
|
¥56.8955
|
|
|
¥37.2561
|
|
|
¥31.6061
|
|
|
¥29.3574
|
|
|
¥23.278
|
|
|
查看
|
|
|
¥27.4477
|
|
|
¥25.7979
|
|
|
¥24.408
|
|
|
¥22.7582
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
|
136 MHz to 941 MHz
|
15 dB
|
8 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
DFN-16
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥46.9063
-
24,223库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
24,223库存量
|
|
|
¥46.9063
|
|
|
¥30.5778
|
|
|
¥26.8375
|
|
|
¥25.3572
|
|
|
¥18.8484
|
|
|
查看
|
|
|
¥23.9673
|
|
|
¥21.7977
|
|
|
¥20.0688
|
|
|
¥18.4077
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
N-Channel
|
Si
|
4 A
|
30 V
|
|
136 MHz to 941 MHz
|
20.9 dB
|
4.9 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
SOT-89-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
- MRF1K50HR5
- NXP Semiconductors
-
1:
¥3,558.0536
-
65库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
|
|
65库存量
|
|
|
¥3,558.0536
|
|
|
¥3,081.849
|
|
|
¥2,963.0295
|
|
|
¥2,891.2971
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
36 A
|
135 V
|
|
1.8 MHz to 500 MHz
|
23.7 dB
|
1.5 kW
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
NI-1230H-4S
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
- MRFE6VP6300HR5
- NXP Semiconductors
-
1:
¥2,924.6547
-
282库存量
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP6300HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 300W50VISM NI780H-4
|
|
282库存量
|
|
|
¥2,924.6547
|
|
|
¥2,508.3627
|
|
|
¥2,399.103
|
|
|
¥2,341.1001
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
|
N-Channel
|
Si
|
|
130 V
|
|
1.8 MHz to 600 MHz
|
26.5 dB
|
300 W
|
|
+ 150 C
|
Screw Mount
|
NI-780-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177
- VRF2944
- Microchip Technology
-
1:
¥1,636.7824
-
10库存量
|
Mouser 零件编号
494-VRF2944
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177
|
|
10库存量
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
50 A
|
180 V
|
|
30 MHz
|
25 dB
|
400 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD55003L-E
- STMicroelectronics
-
1:
¥64.8507
-
2,669库存量
-
3,000预期 2026/7/6
|
Mouser 零件编号
511-PD55003L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
2,669库存量
3,000预期 2026/7/6
|
|
|
¥64.8507
|
|
|
¥46.5673
|
|
|
¥41.7761
|
|
|
¥39.0415
|
|
|
¥39.0415
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerFLAT (5x5)
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003TR-E
- STMicroelectronics
-
1:
¥74.5235
-
394库存量
|
Mouser 零件编号
511-PD55003TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
394库存量
|
|
|
¥74.5235
|
|
|
¥53.7654
|
|
|
¥48.7143
|
|
|
¥45.4938
|
|
最低: 1
倍数: 1
:
600
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55008TR-E
- STMicroelectronics
-
1:
¥128.707
-
605库存量
|
Mouser 零件编号
511-PD55008TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
605库存量
|
|
|
¥128.707
|
|
|
¥95.1234
|
|
|
¥88.8406
|
|
|
¥88.8406
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
600
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD55025-E
- STMicroelectronics
-
1:
¥261.9566
-
70库存量
-
400预期 2027/2/19
|
Mouser 零件编号
511-PD55025-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
70库存量
400预期 2027/2/19
|
|
|
¥261.9566
|
|
|
¥191.987
|
|
|
¥180.4045
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
7 A
|
40 V
|
|
1 GHz
|
14.5 dB
|
25 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥263.7759
-
112库存量
|
Mouser 零件编号
511-PD55025S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
112库存量
|
|
|
¥263.7759
|
|
|
¥193.3882
|
|
|
¥184.2126
|
|
|
¥176.1896
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
7 A
|
40 V
|
|
1 GHz
|
14.5 dB
|
25 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035-E
- STMicroelectronics
-
1:
¥273.2905
-
501库存量
|
Mouser 零件编号
511-PD85035-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
|
501库存量
|
|
|
¥273.2905
|
|
|
¥200.7558
|
|
|
¥191.3994
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
870 MHz
|
14.9 dB
|
35 W
|
- 65 C
|
+ 165 C
|
SMD/SMT
|
PowerSO-12
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-10W
- STMicroelectronics
-
1:
¥774.5472
-
30库存量
-
550预期 2026/7/13
|
Mouser 零件编号
511-SD2931-10W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
30库存量
550预期 2026/7/13
|
|
|
¥774.5472
|
|
|
¥615.3189
|
|
|
¥581.9952
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
20 A
|
125 V
|
|
230 MHz
|
15 dB
|
150 W
|
|
+ 150 C
|
SMD/SMT
|
M174
|
Bulk
|
|