|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor.Mosfet,60W,28V,2-175MHz
- DU2860U
- MACOM
-
1:
¥1,502.2107
-
16库存量
|
Mouser 零件编号
937-DU2860U
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor.Mosfet,60W,28V,2-175MHz
|
|
16库存量
|
|
|
¥1,502.2107
|
|
|
¥1,268.4476
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
12 A
|
65 V
|
|
175 MHz
|
13 dB
|
60 W
|
|
+ 200 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 5 Watts 28Volt Gain 11dB
- MRF134
- MACOM
-
1:
¥822.7756
-
5库存量
-
360在途量
|
Mouser 零件编号
937-MRF134
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 5 Watts 28Volt Gain 11dB
|
|
5库存量
360在途量
在途量:
120 预期 2027/1/8
240 预期 2027/1/18
|
|
|
¥822.7756
|
|
|
¥684.3958
|
|
|
¥671.9884
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
900 mA
|
65 V
|
|
400 MHz
|
11 dB
|
5 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
211-07-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 4Watts 28Volt Gain 16dB
- MRF160
- MACOM
-
1:
¥923.3569
-
5库存量
|
Mouser 零件编号
937-MRF160
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 4Watts 28Volt Gain 16dB
|
|
5库存量
|
|
|
¥923.3569
|
|
|
¥768.1062
|
|
|
¥699.6169
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
1 A
|
65 V
|
|
500 MHz
|
18 dB
|
4 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
249-06
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 100Watts 28Volt 10dB
- UF28100V
- MACOM
-
1:
¥2,970.657
-
14库存量
|
Mouser 零件编号
937-UF28100V
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 100Watts 28Volt 10dB
|
|
14库存量
|
|
|
¥2,970.657
|
|
|
¥2,508.5322
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
12 A
|
65 V
|
|
100 MHz to 500 MHz
|
10 dB
|
100 W
|
- 55 C
|
+ 150 C
|
SMD/SMT
|
744A-01
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,40W,28V,100-500MHz
- UF2840P
- MACOM
-
1:
¥1,212.2075
-
2库存量
|
Mouser 零件编号
937-UF2840P
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,40W,28V,100-500MHz
|
|
2库存量
|
|
|
¥1,212.2075
|
|
|
¥1,013.0224
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
100 MHz to 500 MHz
|
10 dB
|
40 W
|
|
+ 200 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH31F
- CML Micro
-
1:
¥276.624
-
20库存量
|
Mouser 零件编号
938-MWT-PH31F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
20库存量
|
|
|
¥276.624
|
|
|
¥256.1258
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
|
GaAs
|
240 mA to 280 mA
|
|
|
18 GHz
|
13 dB
|
30 dBm
|
|
+ 150 C
|
|
Die
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH32F
- CML Micro
-
1:
¥334.5591
-
9库存量
|
Mouser 零件编号
938-MWT-PH32F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
9库存量
|
|
|
¥334.5591
|
|
|
¥309.8008
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
|
GaAs
|
310 mA to 360 mA
|
|
|
12 GHz
|
13 dB
|
30.5 dBm
|
|
+ 150 C
|
|
Die
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH33F
- CML Micro
-
10:
¥150.516
-
30库存量
|
Mouser 零件编号
938-MWT-PH33F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
30库存量
|
|
|
¥150.516
|
|
|
¥150.2561
|
|
|
¥123.6785
|
|
|
¥116.0397
|
|
|
查看
|
|
|
¥114.6385
|
|
|
报价
|
|
最低： 10
倍数： 10
|
|
|
N-Channel
|
GaAs
|
|
|
|
26 GHz
|
14 dB
|
24 dBm
|
|
|
SMD/SMT
|
Die
|
Gel Pack
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G18XS-400AVT/SOT1275/REEL
- BLC10G18XS-400AVTY
- Ampleon
-
1:
¥759.0888
-
80库存量
|
Mouser 零件编号
94-BLC10G18XS400AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G18XS-400AVT/SOT1275/REEL
|
|
80库存量
|
|
|
¥759.0888
|
|
|
¥633.8509
|
|
|
¥602.2561
|
|
|
¥577.6899
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
74 mOhms, 128 mOhms
|
1.805 GHz to 1.88 GHz
|
15.7 dB
|
400 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G18XS-551AVT/SOT1258/REEL
- BLC10G18XS-551AVTY
- Ampleon
-
1:
¥968.2744
-
90库存量
|
Mouser 零件编号
94-BLC10G18XS551AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G18XS-551AVT/SOT1258/REEL
|
|
90库存量
|
|
|
¥968.2744
|
|
|
¥810.8654
|
|
|
¥769.5865
|
|
|
¥745.3593
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
62 mOhms, 108 mOhms
|
1.805 GHz to 1.88 GHz
|
16.1 dB
|
550 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G22XS-400AVT/SOT1258/REEL
- BLC10G22XS-400AVTY
- Ampleon
-
1:
¥759.0888
-
78库存量
|
Mouser 零件编号
94-BLC10G22XS400AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G22XS-400AVT/SOT1258/REEL
|
|
78库存量
|
|
|
¥759.0888
|
|
|
¥633.8509
|
|
|
¥602.3352
|
|
|
¥573.475
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
74 mOhms, 128 mOhms
|
2.1 GHz to 2.2 GHz
|
16.3 dB
|
400 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G22XS-570AVT/SOT1258/REEL
- BLC10G22XS-570AVTY
- Ampleon
-
1:
¥912.6897
-
100库存量
|
Mouser 零件编号
94-BLC10G22XS570AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G22XS-570AVT/SOT1258/REEL
|
|
100库存量
|
|
|
¥912.6897
|
|
|
¥764.2981
|
|
|
¥742.9524
|
|
|
¥696.1365
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
65 mOhms, 111 Ohms
|
2.11 GHz to 2.18 GHz
|
15.7 dB
|
570 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G27XS-400AVT/SOT1258/REELDP
- BLC10G27XS-400AVTY
- Ampleon
-
1:
¥994.0836
-
87库存量
|
Mouser 零件编号
94-BLC10G27XS400AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G27XS-400AVT/SOT1258/REELDP
|
|
87库存量
|
|
|
¥994.0836
|
|
|
¥832.4484
|
|
|
¥807.6336
|
|
|
¥758.2526
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
90.1 mOhms, 155.8 mOhms
|
2.496 GHz to 2.69 GHz
|
13.3 dB
|
400 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G27XS-551AVT/SOT1258/REEL
- BLC10G27XS-551AVTY
- Ampleon
-
1:
¥1,344.3045
-
99库存量
|
Mouser 零件编号
94-BLC10G27XS551AVTY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC10G27XS-551AVT/SOT1258/REEL
|
|
99库存量
|
|
|
¥1,344.3045
|
|
|
¥1,139.9892
|
|
|
¥1,088.9584
|
|
|
¥1,065.8838
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
62 mOhms, 108 mOhms
|
2.62 GHz to 2.69 GHz
|
6.4 dB
|
550 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1258-4-7
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC9H10XS-350A/SOT1273/REELDP
- BLC9H10XS-350AY
- Ampleon
-
1:
¥733.031
-
100库存量
|
Mouser 零件编号
94-BLC9H10XS-350AY
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC9H10XS-350A/SOT1273/REELDP
|
|
100库存量
|
|
|
¥733.031
|
|
|
¥609.4542
|
|
|
¥592.7415
|
|
|
¥548.2421
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
LDMOS
|
|
50 V
|
203 mOhms, 300 mOhms
|
617 MHz to 960 MHz
|
18.1 dB
|
350 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1273-1-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC9H10XS-350A/SOT1273/TRAYDP
- BLC9H10XS-350AZ
- Ampleon
-
1:
¥726.9855
-
35库存量
|
Mouser 零件编号
94-BLC9H10XS-350AZ
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC9H10XS-350A/SOT1273/TRAYDP
|
|
35库存量
|
|
|
¥726.9855
|
|
|
¥582.8201
|
|
|
¥563.4632
|
|
|
¥548.2421
|
|
最低： 1
倍数： 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
50 V
|
203 mOhms, 300 mOhms
|
617 MHz to 960 MHz
|
18.1 dB
|
350 W
|
- 40 C
|
+ 125 C
|
SMD/SMT
|
SOT1273-1-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-stage power MMIC
- BLM7G1822S-40PBGY
- Ampleon
-
1:
¥370.4027
-
45库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM7G1822S-40PBGY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-stage power MMIC
|
|
45库存量
|
|
|
¥370.4027
|
|
|
¥320.355
|
|
|
¥304.5576
|
|
|
¥267.584
|
|
|
¥262.7928
|
|
最低： 1
倍数： 1
:
100
|
|
|
|
LDMOS
|
|
65 V
|
|
1.805 GHz to 2.17 GHz
|
33 dB
|
45.1 W
|
|
+ 150 C
|
SMD/SMT
|
SOT1212-3-16
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-Stage Power MMIC
- BLM7G1822S-80PBGY
- Ampleon
-
1:
¥579.0911
-
19库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM7G1822S-80PBGY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LDMOS 2-Stage Power MMIC
|
|
19库存量
|
|
|
¥579.0911
|
|
|
¥479.9223
|
|
|
¥455.7629
|
|
|
¥429.1288
|
|
最低： 1
倍数： 1
:
100
|
|
|
|
LDMOS
|
|
28 V
|
|
1.805 GHz to 2.17 GHz
|
29 dB
|
49.6 dBm
|
|
+ 150 C
|
SMD/SMT
|
SOT1212-3-16
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15H9S100G/TO270/REEL
- BLP15H9S100GXY
- Ampleon
-
1:
¥251.2103
-
70库存量
-
100预期 2026/10/5
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15H9S100GXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15H9S100G/TO270/REEL
|
|
70库存量
100预期 2026/10/5
|
|
|
¥251.2103
|
|
|
¥201.0835
|
|
|
¥186.5291
|
|
|
¥165.6806
|
|
|
¥157.3299
|
|
|
¥154.7648
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
50 V
|
30 mOhms
|
2 GHz
|
19 dB
|
100 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2G-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S70/TO270/REEL
- BLP15M9S70XY
- Ampleon
-
1:
¥242.5206
-
59库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15M9S70XY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S70/TO270/REEL
|
|
59库存量
|
|
|
¥242.5206
|
|
|
¥194.134
|
|
|
¥180.0768
|
|
|
¥159.9741
|
|
|
¥151.872
|
|
|
查看
|
|
|
¥149.6346
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
65 V
|
185 mOhms
|
2 GHz
|
17.8 dB
|
70 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2F-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP5LA55S/TO270/REEL
- BLP5LA55SXY
- Ampleon
-
1:
¥236.735
-
54库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP5LA55SXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP5LA55S/TO270/REEL
|
|
54库存量
|
|
|
¥236.735
|
|
|
¥189.501
|
|
|
¥175.7715
|
|
|
¥156.166
|
|
|
¥148.3125
|
|
|
查看
|
|
|
¥146.0751
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
30 V
|
60 mOhms
|
520 MHz
|
19.6 dB
|
55 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2F-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9LA25SG/TO270/REEL
- BLP9LA25SGXY
- Ampleon
-
1:
¥179.2406
-
100库存量
-
200预期 2026/7/21
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP9LA25SGXY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9LA25SG/TO270/REEL
|
|
100库存量
200预期 2026/7/21
|
|
|
¥179.2406
|
|
|
¥133.9163
|
|
|
¥124.1531
|
|
|
¥110.2654
|
|
|
¥105.4629
|
|
|
查看
|
|
|
¥103.395
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
LDMOS
|
|
40 V
|
128 mOhms
|
941 MHz
|
18.8 dB
|
25 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2G-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
Microchip Technology ARF461BG
- ARF461BG
- Microchip Technology
-
1:
¥489.8437
-
30库存量
|
Mouser 零件编号
494-ARF461BG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
|
|
30库存量
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
6.5 A
|
1 kV
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
- PTVA030121EA-V1-R0
- MACOM
-
1:
¥424.0099
-
39库存量
-
NRND
|
Mouser 零件编号
941-PTVA030121EA1R0
NRND
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
|
|
39库存量
|
|
|
¥424.0099
|
|
|
¥361.6452
|
|
|
¥361.6452
|
|
|
¥316.3096
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
:
50
|
|
|
|
Si
|
1 mA
|
105 V
|
2.8 Ohms
|
390 MHz to 450 MHz
|
25 dB
|
12 W
|
|
+ 225 C
|
SMD/SMT
|
H-36265-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
- PTVA120251EA-V2-R0
- MACOM
-
1:
¥462.5655
-
7库存量
-
NRND
|
Mouser 零件编号
941-PTVA120251EA2R0
NRND
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
|
|
7库存量
|
|
|
¥462.5655
|
|
|
¥441.6379
|
|
|
¥441.6379
|
|
|
¥412.111
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
10 mA
|
105 V
|
1.4 Ohms
|
500 MHz to 1.4 GHz
|
18 dB
|
25 W
|
|
+ 225 C
|
SMD/SMT
|
H-36265-2
|
Reel, Cut Tape, MouseReel
|
|
