|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
- MRFX035HR5
- NXP Semiconductors
-
1:
¥1,175.4486
-
4库存量
-
寿命结束
|
Mouser 零件编号
771-MRFX035HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
|
|
4库存量
|
|
|
¥1,175.4486
|
|
|
¥915.4243
|
|
|
¥915.4243
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
193 V
|
|
1.8 MHz to 512 MHz
|
24.8 dB
|
35 W
|
- 40 C
|
+ 150 C
|
Screw Mount
|
NI-360H-2SB
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
- AFM906NT1
- NXP Semiconductors
-
1:
¥38.9059
-
147库存量
-
寿命结束
|
Mouser 零件编号
841-AFM906NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V
|
|
147库存量
|
|
|
¥38.9059
|
|
|
¥28.928
|
|
|
¥25.3572
|
|
|
¥23.8882
|
|
|
查看
|
|
|
¥17.8088
|
|
|
¥22.5774
|
|
|
¥19.888
|
|
|
¥18.6789
|
|
|
¥17.8088
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
4.7 A
|
30 V
|
|
136 MHz to 941 MHz
|
16.2 dB
|
6.5 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
HVSON-16
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥539.688
-
23库存量
-
500预期 2026/7/1
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 75W 12.5V TO270WB4
|
|
23库存量
500预期 2026/7/1
|
|
|
¥539.688
|
|
|
¥374.934
|
|
|
¥374.8549
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-WB-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
- MRF6V10010NR4
- NXP Semiconductors
-
1:
¥1,542.0545
-
1库存量
-
寿命结束
|
Mouser 零件编号
841-MRF6V10010NR4
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 10W PULSE PLD1.5
|
|
1库存量
|
|
|
¥1,542.0545
|
|
|
¥1,308.0767
|
|
|
¥1,246.503
|
|
|
¥1,229.9146
|
|
|
¥1,143.8312
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
:
100
|
|
|
N-Channel
|
Si
|
|
100 V
|
|
960 MHz to 1.4 GHz
|
25 dB
|
10 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174 MATCHED PAIR
Microchip Technology VRF150MP
- VRF150MP
- Microchip Technology
-
1:
¥1,155.877
-
5库存量
-
56预期 2026/10/23
|
Mouser 零件编号
494-VRF150MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174 MATCHED PAIR
|
|
5库存量
56预期 2026/10/23
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
16 A
|
180 V
|
|
150 MHz
|
18 dB
|
150 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 NFET SC88 60V 295MA 1.6OH
onsemi NVJD5121NT1G-M06
- NVJD5121NT1G-M06
- onsemi
-
1:
¥3.6386
-
16,597库存量
|
Mouser 零件编号
863-NVJD5121NT1G-M06
|
onsemi
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 NFET SC88 60V 295MA 1.6OH
|
|
16,597库存量
|
|
|
¥3.6386
|
|
|
¥2.2261
|
|
|
¥1.4012
|
|
|
¥1.0509
|
|
|
¥0.93451
|
|
|
¥0.72772
|
|
最低： 1
倍数： 1
:
3,000
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
- PTFC270101M-V1-R1K
- MACOM
-
1:
¥252.1369
-
1库存量
-
工厂特别订单
|
Mouser 零件编号
941-PTFC270101M1RK
工厂特别订单
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
|
|
1库存量
|
|
|
¥252.1369
|
|
|
查看
|
|
|
¥215.2989
|
|
|
¥215.7396
|
|
|
¥215.2989
|
|
|
¥215.2989
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
10 mA
|
65 V
|
2 Ohms
|
900 MHz to 2.7 GHz
|
19.5 dB
|
5 W
|
|
+ 225 C
|
SMD/SMT
|
SON-10
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<150MHz,28V,150W,TMOS
MACOM MRF175GU
- MRF175GU
- MACOM
-
1:
¥2,521.1882
-
4库存量
|
Mouser 零件编号
937-MRF175GU
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,<150MHz,28V,150W,TMOS
|
|
4库存量
|
|
|
¥2,521.1882
|
|
|
¥2,128.9426
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 80Watts 28Volt Gain 13dB
- MRF173
- MACOM
-
1:
¥1,249.9269
-
150预期 2026/12/4
|
Mouser 零件编号
937-MRF173
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 80Watts 28Volt Gain 13dB
|
|
150预期 2026/12/4
|
|
|
¥1,249.9269
|
|
|
¥1,044.5381
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
9 A
|
65 V
|
|
200 MHz
|
13 dB
|
80 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
221-11-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FE/SOT539/TRAY
- ART2K0FEU
- Ampleon
-
1:
¥2,258.8135
-
607在途量
-
Mouser 的新产品
|
Mouser 零件编号
94-ART2K0FEU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FE/SOT539/TRAY
|
|
607在途量
在途量:
367 预期 2026/9/23
240 预期 2026/10/6
|
|
|
¥2,258.8135
|
|
|
¥1,894.0269
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Dual N-Channel
|
LDMOS
|
|
65 V
|
100 mOhms
|
1 MHz to 400 MHz
|
28.4 dB
|
2 kW
|
|
+ 225 C
|
Screw Mount
|
SOT539AN-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1275/REELDP
- BLM9D2327-26BZ
- Ampleon
-
1:
¥250.2159
-
1,500在途量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM9D2327-26BZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1275/REELDP
|
|
1,500在途量
在途量:
500 预期 2026/8/31
1,000 预期 2026/9/11
|
|
|
¥250.2159
|
|
|
¥202.2361
|
|
|
¥190.2468
|
|
|
¥183.7154
|
|
|
¥177.9185
|
|
|
¥173.8731
|
|
最低： 1
倍数： 1
:
500
|
|
|
|
LDMOS
|
|
65 V
|
|
2.3 GHz to 2.7 GHz
|
31.3 dB
|
44.8 dBm
|
|
+ 200 C
|
SMD/SMT
|
QFN-20
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S100G/TO270/REEL
- BLP15M9S100GZ
- Ampleon
-
1:
¥226.3955
-
1,000预期 2026/7/21
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15M9S100GZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S100G/TO270/REEL
|
|
1,000预期 2026/7/21
|
|
|
¥226.3955
|
|
|
¥182.3933
|
|
|
¥171.3871
|
|
|
¥164.6862
|
|
|
¥159.556
|
|
|
¥155.0134
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
LDMOS
|
|
65 V
|
143 mOhms
|
1.5 GHz
|
16 dB
|
100 W
|
|
+ 225 C
|
SMD/SMT
|
TO-270-2G-1-3
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLF3H0035-100/SOT467C/TRAY
- CLF3H0035-100U
- Ampleon
-
1:
¥2,434.9918
-
60预期 2026/9/25
-
Mouser 的新产品
|
Mouser 零件编号
94-CLF3H0035-100U
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 CLF3H0035-100/SOT467C/TRAY
|
|
60预期 2026/9/25
|
|
|
¥2,434.9918
|
|
|
¥2,030.2597
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
GaN Si
|
|
50 V
|
240 mOhms
|
0 Hz to 3.5 GHz
|
15 dB
|
100 W
|
|
+ 300 C
|
Screw Mount
|
SOT467C-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174
- VRF150
- Microchip Technology
-
1:
¥566.4351
-
157预期 2026/7/7
|
Mouser 零件编号
494-VRF150
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 150 MHz M174
|
|
157预期 2026/7/7
|
|
|
¥566.4351
|
|
|
¥545.7561
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
16 A
|
180 V
|
|
150 MHz
|
18 dB
|
150 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- MRF101AN
- NXP Semiconductors
-
1:
¥386.0532
-
2,612预期 2026/6/29
-
寿命结束
|
Mouser 零件编号
771-MRF101AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
|
|
2,612预期 2026/6/29
|
|
|
¥386.0532
|
|
|
¥315.4395
|
|
|
¥307.4617
|
|
|
¥276.0138
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
8.8 A
|
133 V
|
|
1.8 MHz to 250 MHz
|
21.1 dB
|
115 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-220-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥760.1284
-
480预期 2026/7/9
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
480预期 2026/7/9
|
|
|
¥760.1284
|
|
|
¥637.659
|
|
|
¥567.147
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
- AFT05MS031NR1
- NXP Semiconductors
-
1:
¥200.7219
-
1,124在途量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
|
|
1,124在途量
在途量:
124 预期 2026/6/23
1,000 预期 2026/7/6
|
|
|
¥200.7219
|
|
|
¥160.6747
|
|
|
¥149.6459
|
|
|
¥146.6062
|
|
|
查看
|
|
|
¥138.5267
|
|
|
¥142.3461
|
|
|
¥138.5267
|
|
|
¥138.5267
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
Si
|
7.5 A
|
40 V
|
|
136 MHz to 520 MHz
|
17.7 dB
|
33 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥68.1729
-
9,541在途量
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LANDMOBILE 7W PLD1.5W
|
|
9,541在途量
在途量:
541 预期 2026/7/2
9,000 预期 2026/7/6
|
|
|
¥68.1729
|
|
|
¥52.3755
|
|
|
¥48.025
|
|
|
¥46.7255
|
|
|
查看
|
|
|
¥37.3465
|
|
|
¥44.1265
|
|
|
¥41.5162
|
|
|
¥39.8664
|
|
|
¥37.3465
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
|
136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230HS
- MRFE6VP61K25HSR5
- NXP Semiconductors
-
1:
¥3,441.415
-
100在途量
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP61K25HSR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1.25KW ISM NI1230HS
|
|
100在途量
|
|
|
¥3,441.415
|
|
|
¥2,793.3261
|
|
|
¥2,793.3261
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
|
1.8 MHz to 600 MHz
|
24 dB
|
1.25 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230S-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
- TAV1-331+
- Mini-Circuits
-
1:
¥141.8602
-
1,513在途量
|
Mouser 零件编号
139-TAV1-331
|
Mini-Circuits
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LOW NOISE AMPL / SM / RoHS
|
|
1,513在途量
在途量:
13 预期 2026/6/30
500 预期 2026/10/12
1,000 预期 2026/11/2
|
|
|
¥141.8602
|
|
|
¥18.3625
|
|
|
¥17.289
|
|
|
¥16.5432
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
GaAs
|
60 mA
|
4 V
|
|
10 MHz to 4 GHz
|
12 dB
|
21.3 dBm
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
MCLP-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
- VRF151
- Microchip Technology
-
1:
¥580.0855
-
154在途量
|
Mouser 零件编号
494-VRF151
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 150 W 175 MHz M174
|
|
154在途量
在途量:
79 预期 2026/7/8
75 预期 2026/10/26
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
16 A
|
180 V
|
|
175 MHz
|
22 dB
|
150 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
- MRF166W
- MACOM
-
1:
¥1,706.0175
-
40预期 2026/8/7
|
Mouser 零件编号
937-MRF166W
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
|
|
40预期 2026/8/7
|
|
|
¥1,706.0175
|
|
|
¥1,440.5805
|
|
最低： 1
倍数： 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
- MRF171A
- MACOM
-
1:
¥1,189.8674
-
50预期 2026/10/13
|
Mouser 零件编号
937-MRF171A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
|
|
50预期 2026/10/13
|
|
|
¥1,189.8674
|
|
|
¥994.3322
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4.5 A
|
65 V
|
|
150 MHz
|
17 dB
|
45 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
211-07-3
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 26 GHz Medium Power Packaged GaAs FET
- MWT-773
- CML Micro
-
1:
¥500.703
-
100预期 2026/6/23
|
Mouser 零件编号
938-MWT-773
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 26 GHz Medium Power Packaged GaAs FET
|
|
100预期 2026/6/23
|
|
|
¥500.703
|
|
|
¥469.8653
|
|
|
¥454.4069
|
|
|
¥454.4069
|
|
最低： 1
倍数： 1
:
100
|
|
|
|
GaAs
|
26 mA
|
|
173 Ohms
|
26 GHz
|
11 dB
|
20 dBm
|
|
+ 150 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART150FE/SOT467C/TRAY
- ART150FEU
- Ampleon
-
1:
¥1,162.0807
-
120预期 2026/11/20
-
Mouser 的新产品
|
Mouser 零件编号
94-ART150FEU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART150FE/SOT467C/TRAY
|
|
120预期 2026/11/20
|
|
|
¥1,162.0807
|
|
|
¥946.5219
|
|
|
¥917.5713
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
LDMOS
|
|
65 V
|
482 mOhms
|
1 MHz to 650 MHz
|
31 dB
|
150 W
|
|
+ 225 C
|
Screw Mount
|
SOT467C-3
|
Tray
|
|
