|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
Microchip Technology VRF154FL
- VRF154FL
- Microchip Technology
-
1:
¥3,573.2521
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF154FL
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
|
|
无库存交货期 22 周
|
|
|
¥3,573.2521
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
Microchip Technology VRF154FLMP
- VRF154FLMP
- Microchip Technology
-
10:
¥5,390.1904
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF154FLMP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
|
|
无库存交货期 22 周
|
|
|
¥5,390.1904
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
Microchip Technology VRF157FL
- VRF157FL
- Microchip Technology
-
10:
¥3,861.5151
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF157FL
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
|
|
无库存交货期 22 周
|
|
|
¥3,861.5151
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
Microchip Technology VRF157FLMP
- VRF157FLMP
- Microchip Technology
-
10:
¥7,723.0302
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF157FLMP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2
|
|
无库存交货期 22 周
|
|
|
¥7,723.0302
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174
Microchip Technology VRF161
- VRF161
- Microchip Technology
-
1:
¥676.531
-
无库存交货期 30 周
|
Mouser 零件编号
494-VRF161
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174
|
|
无库存交货期 30 周
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174
Microchip Technology VRF161MP
- VRF161MP
- Microchip Technology
-
10:
¥1,361.2545
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF161MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174
|
|
无库存交货期 22 周
|
|
|
¥1,361.2545
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
|
N-Channel
|
Si
|
20 A
|
180 V
|
|
150 MHz
|
24 dB
|
200 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177
Microchip Technology VRF2944MP
- VRF2944MP
- Microchip Technology
-
10:
¥3,298.8768
-
无库存交货期 30 周
|
Mouser 零件编号
494-VRF2944MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177
|
|
无库存交货期 30 周
|
|
最低: 10
倍数: 10
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
STMicroelectronics RF2L24280CB4
- RF2L24280CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF2L24280CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L10700CB4
- RF4L10700CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF4L10700CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L15400CB4
- RF4L15400CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF4L15400CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
STMicroelectronics RF5L0912750CB4
- RF5L0912750CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF5L0912750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
STMicroelectronics RF5L10111K0CB4
- RF5L10111K0CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF5L10111K0CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
STMicroelectronics RF5L1214750CB4
- RF5L1214750CB4
- STMicroelectronics
-
100:
¥1,642.907
-
无库存
|
Mouser 零件编号
511-RF5L1214750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
|
|
无库存
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
STMicroelectronics RF5L15030CB2
- RF5L15030CB2
- STMicroelectronics
-
180:
¥422.5974
-
无库存
|
Mouser 零件编号
511-RF5L15030CB2
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
|
|
无库存
|
|
|
¥422.5974
|
|
|
查看
|
|
|
报价
|
|
最低: 180
倍数: 180
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
STMicroelectronics SD2931-15W
- SD2931-15W
- STMicroelectronics
-
50:
¥566.2769
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD2931-15W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
|
|
无库存交货期 28 周
|
|
|
¥566.2769
|
|
|
¥560.7286
|
|
最低: 50
倍数: 50
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
STMicroelectronics SD2933-03W
- SD2933-03W
- STMicroelectronics
-
50:
¥1,016.9887
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD2933-03W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
|
|
无库存交货期 28 周
|
|
最低: 50
倍数: 50
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
STMicroelectronics STAC1011-500
- STAC1011-500
- STMicroelectronics
-
80:
¥1,225.0217
-
无库存交货期 28 周
|
Mouser 零件编号
511-STAC1011-500
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
|
|
无库存交货期 28 周
|
|
最低: 80
倍数: 80
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 1000 V 2000 W 30 MHz T4
Microchip Technology DRF1311
- DRF1311
- Microchip Technology
-
10:
¥3,417.1652
-
无库存交货期 26 周
|
Mouser 零件编号
579-DRF1311
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 1000 V 2000 W 30 MHz T4
|
|
无库存交货期 26 周
|
|
最低: 10
倍数: 10
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 140 V 150 W 175 MHz T12
Microchip Technology VRF152G
- VRF152G
- Microchip Technology
-
1:
¥1,444.0609
-
无库存交货期 22 周
|
Mouser 零件编号
579-VRF152G
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 140 V 150 W 175 MHz T12
|
|
无库存交货期 22 周
|
|
|
¥1,444.0609
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 140 V 150 W 175 MHz T12
Microchip Technology VRF152GMP
- VRF152GMP
- Microchip Technology
-
1:
¥2,945.7631
-
无库存交货期 22 周
|
Mouser 零件编号
579-VRF152GMP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 140 V 150 W 175 MHz T12
|
|
无库存交货期 22 周
|
|
|
¥2,945.7631
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8--600 MHz 150 W CW 50 V
NXP Semiconductors MRFE6VP5150GNR1
- MRFE6VP5150GNR1
- NXP Semiconductors
-
500:
¥444.5194
-
无库存交货期 99 周
|
Mouser 零件编号
841-MRFE6VP5150GNR1
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8--600 MHz 150 W CW 50 V
|
|
无库存交货期 99 周
|
|
最低: 500
倍数: 500
|
|
|
N-Channel
|
Si
|
|
133 V
|
|
1.8 MHz to 600 MHz
|
26.1 dB
|
150 W
|
- 40 C
|
+ 150 C
|
Screw Mount
|
TO-270WBG-4
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
NXP Semiconductors MRFE8VP8600HR5
- MRFE8VP8600HR5
- NXP Semiconductors
-
50:
¥1,951.3518
-
无库存交货期 16 周
|
Mouser 零件编号
841-MRFE8VP8600HR5
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
|
|
无库存交货期 16 周
|
|
|
¥1,951.3518
|
|
|
查看
|
|
|
报价
|
|
最低: 50
倍数: 50
|
|
|
N-Channel
|
Si
|
17 A
|
115 V
|
|
470 MHz to 860 MHz
|
21 dB
|
140 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
NI-1230H-4
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,15W,12V,2-175MHz
MACOM DU1215S
- DU1215S
- MACOM
-
40:
¥547.5754
-
无库存交货期 22 周
|
Mouser 零件编号
937-DU1215S
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,15W,12V,2-175MHz
|
|
无库存交货期 22 周
|
|
|
¥547.5754
|
|
|
¥532.117
|
|
|
查看
|
|
|
报价
|
|
最低: 40
倍数: 20
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,2-175 MHz
MACOM DU2805S
- DU2805S
- MACOM
-
1:
¥547.9144
-
无库存交货期 28 周
|
Mouser 零件编号
937-DU2805S
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,2-175 MHz
|
|
无库存交货期 28 周
|
|
|
¥547.9144
|
|
|
¥438.0671
|
|
|
¥419.7837
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,200W,28V,2-175MHz
MACOM DU28200M
- DU28200M
- MACOM
-
10:
¥3,529.9053
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU28200M
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,200W,28V,2-175MHz
|
|
无库存交货期 26 周
|
|
最低: 10
倍数: 10
|
|
|
N-Channel
|
Si
|
20 A
|
65 V
|
|
175 MHz
|
13 dB
|
200 W
|
|
+ 200 C
|
Screw Mount
|
|
|
|