|
|
GaN 场效应晶体管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
¥41.0303
-
700库存量
-
新产品
|
Mouser 零件编号
511-SGT140R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
700库存量
|
|
|
¥41.0303
|
|
|
¥28.702
|
|
|
¥21.5039
|
|
|
¥19.1083
|
|
|
查看
|
|
|
¥15.8765
|
|
|
¥18.7806
|
|
|
¥15.8765
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ILB
- STMicroelectronics
-
1:
¥32.0129
-
700库存量
-
新产品
|
Mouser 零件编号
511-SGT240R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
700库存量
|
|
|
¥32.0129
|
|
|
¥22.1706
|
|
|
¥16.7918
|
|
|
¥14.7239
|
|
|
查看
|
|
|
¥12.2379
|
|
|
¥14.4753
|
|
|
¥12.2379
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
- SGT190R70ILB
- STMicroelectronics
-
1:
¥33.4141
-
700库存量
-
新产品
|
Mouser 零件编号
511-SGT190R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
|
|
700库存量
|
|
|
¥33.4141
|
|
|
¥24.8939
|
|
|
¥18.8597
|
|
|
¥18.193
|
|
|
查看
|
|
|
¥12.656
|
|
|
¥14.9725
|
|
|
¥12.656
|
|
|
报价
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
11.5 A
|
190 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
- SGT105R70ILB
- STMicroelectronics
-
1:
¥54.1835
-
693库存量
-
新产品
|
Mouser 零件编号
511-SGT105R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
|
|
693库存量
|
|
|
¥54.1835
|
|
|
¥42.1038
|
|
|
¥31.8434
|
|
|
¥30.7699
|
|
|
¥22.4192
|
|
|
¥18.9388
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
21.7 A
|
105 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
4.8 nC
|
- 55 C
|
+ 150 C
|
158 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
¥82.3883
-
351库存量
-
新产品
|
Mouser 零件编号
511-SGT070R70HTO
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
351库存量
|
|
|
¥82.3883
|
|
|
¥56.50
|
|
|
¥42.4315
|
|
|
¥34.6571
|
|
|
¥34.578
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
SMD/SMT
|
TO-LL-11
|
|
|
700 V
|
26 A
|
70 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
231 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
¥56.6582
-
675库存量
-
新产品
|
Mouser 零件编号
511-SGT080R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
675库存量
|
|
|
¥56.6582
|
|
|
¥38.1375
|
|
|
¥27.6285
|
|
|
¥25.8883
|
|
|
¥22.4983
|
|
|
¥21.0971
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
29 A
|
80 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
¥23.165
-
679库存量
-
新产品
|
Mouser 零件编号
511-SGT350R70GTK
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
679库存量
|
|
|
¥23.165
|
|
|
¥14.9725
|
|
|
¥10.2604
|
|
|
¥8.2377
|
|
|
¥6.8817
|
|
|
查看
|
|
|
¥7.6953
|
|
|
¥6.2828
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
SMD/SMT
|
DPAK-3
|
|
|
700 V
|
6 A
|
350 mOhms
|
- 1.4 V, + 7 V
|
2.5 V
|
1.5 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
|
|
|
GaN 场效应晶体管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
- SGT65R65AL
- STMicroelectronics
-
3,000:
¥45.3243
-
无库存交货期 52 周
|
Mouser 零件编号
511-SGT65R65AL
|
STMicroelectronics
|
GaN 场效应晶体管 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
|
|
无库存交货期 52 周
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
25 A
|
65 mOhms
|
+ 6 V
|
1.8 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
305 W
|
|
|