|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD54008L-E
- STMicroelectronics
-
1:
¥69.3142
-
3,796库存量
|
Mouser 零件编号
511-PD54008L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
3,796库存量
|
|
|
¥69.3142
|
|
|
¥49.8782
|
|
|
¥43.505
|
|
|
¥42.9287
|
|
|
¥42.9287
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
15 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerFLAT (5x5)
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55003-E
- STMicroelectronics
-
1:
¥92.0611
-
6,627库存量
|
Mouser 零件编号
511-PD55003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
6,627库存量
|
|
|
¥92.0611
|
|
|
¥64.1049
|
|
|
¥58.9747
|
|
|
¥58.8956
|
|
|
¥58.647
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD54008-E
- STMicroelectronics
-
1:
¥126.221
-
1,549库存量
|
Mouser 零件编号
511-PD54008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
1,549库存量
|
|
|
¥126.221
|
|
|
¥89.3378
|
|
|
¥82.9646
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
11.5 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060-E
- STMicroelectronics
-
1:
¥474.4644
-
870库存量
|
Mouser 零件编号
511-PD57060-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
|
|
870库存量
|
|
|
¥474.4644
|
|
|
¥390.6636
|
|
|
¥386.121
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
7 A
|
65 V
|
|
1 GHz
|
14.3 dB
|
60 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
- SD2932W
- STMicroelectronics
-
1:
¥1,676.3211
-
128库存量
|
Mouser 零件编号
511-SD2932W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
|
|
128库存量
|
|
|
¥1,676.3211
|
|
|
¥1,358.5312
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
125 V
|
|
250 MHz
|
16 dB
|
300 W
|
|
+ 150 C
|
SMD/SMT
|
M244
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035-E
- STMicroelectronics
-
1:
¥273.3809
-
499库存量
|
Mouser 零件编号
511-PD85035-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
|
499库存量
|
|
|
¥273.3809
|
|
|
¥228.8702
|
|
|
¥200.2586
|
|
|
¥200.01
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
870 MHz
|
14.9 dB
|
35 W
|
- 65 C
|
+ 165 C
|
SMD/SMT
|
PowerSO-12
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003S-E
- STMicroelectronics
-
1:
¥88.0044
-
472库存量
|
Mouser 零件编号
511-PD55003S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
472库存量
|
|
|
¥88.0044
|
|
|
¥61.2912
|
|
|
¥58.647
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
- SD4933MR
- STMicroelectronics
-
1:
¥1,262.9106
-
93库存量
|
Mouser 零件编号
511-SD4933MR
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
|
|
93库存量
|
|
|
¥1,262.9106
|
|
|
¥1,072.4152
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
200 V
|
|
100 MHz
|
24 dB
|
300 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M177MR-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD55025-E
- STMicroelectronics
-
1:
¥256.171
-
212库存量
|
Mouser 零件编号
511-PD55025-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
212库存量
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
7 A
|
40 V
|
|
1 GHz
|
14.5 dB
|
25 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥226.226
-
148库存量
|
Mouser 零件编号
511-PD55025S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
148库存量
|
|
|
¥226.226
|
|
|
¥172.6301
|
|
|
¥172.551
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
7 A
|
40 V
|
|
1 GHz
|
14.5 dB
|
25 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
¥179.9073
-
576库存量
|
Mouser 零件编号
511-PD55015TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
576库存量
|
|
|
¥179.9073
|
|
|
¥134.9898
|
|
|
¥122.2547
|
|
|
¥122.2547
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD54003-E
- STMicroelectronics
-
1:
¥98.8411
-
115库存量
|
Mouser 零件编号
511-PD54003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
115库存量
|
|
|
¥98.8411
|
|
|
¥57.5735
|
|
|
¥55.8333
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
25 V
|
|
1 GHz
|
12 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-11W
- STMicroelectronics
-
1:
¥698.3739
-
5库存量
-
250在途量
|
Mouser 零件编号
511-SD2931-11W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
5库存量
250在途量
在途量:
100 预期 2026/4/27
150 预期 2026/5/4
|
|
|
¥698.3739
|
|
|
¥554.1972
|
|
|
¥532.8515
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
20 A
|
125 V
|
|
175 MHz
|
14 dB
|
150 W
|
|
+ 200 C
|
Screw Mount
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
- RF5L15120CB4
- STMicroelectronics
-
1:
¥1,593.1079
-
18库存量
-
NRND
|
Mouser 零件编号
511-RF5L15120CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
|
|
18库存量
|
|
|
¥1,593.1079
|
|
|
¥1,299.1384
|
|
|
¥1,299.0593
|
|
最低： 1
倍数： 1
|
|
|
Dual N-Channel
|
Si
|
2.5 A
|
95 V
|
1 Ohms
|
1 GHz
|
20 dB
|
120 W
|
|
+ 200 C
|
SMD/SMT
|
LBB-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥1,426.851
-
110库存量
-
NRND
|
Mouser 零件编号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
110库存量
|
|
|
¥1,426.851
|
|
|
¥1,211.6199
|
|
|
¥1,143.8764
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
110 V
|
1 Ohms
|
1 GHz
|
19 dB
|
400 W
|
|
+ 200 C
|
SMD/SMT
|
B4E-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
- RF2L16180CB4
- STMicroelectronics
-
1:
¥1,426.851
-
20库存量
-
NRND
|
Mouser 零件编号
511-RF2L16180CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
|
|
20库存量
|
|
|
¥1,426.851
|
|
|
¥1,158.9393
|
|
|
¥1,143.8764
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
65 V
|
1 Ohms
|
1.6 GHz
|
14 dB
|
180 W
|
|
+ 200 C
|
SMD/SMT
|
B4E-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55008-E
- STMicroelectronics
-
1:
¥142.0184
-
1,497库存量
|
Mouser 零件编号
511-PD55008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
1,497库存量
|
|
|
¥142.0184
|
|
|
¥95.0443
|
|
|
¥94.3776
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥190.744
-
310库存量
|
Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
310库存量
|
|
|
¥190.744
|
|
|
¥156.0869
|
|
|
¥137.8826
|
|
|
¥128.707
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-10W
- STMicroelectronics
-
1:
¥759.3374
-
312库存量
-
300预期 2026/4/2
|
Mouser 零件编号
511-SD2931-10W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
312库存量
300预期 2026/4/2
|
|
|
¥759.3374
|
|
|
¥603.2505
|
|
|
¥581.9952
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
20 A
|
125 V
|
|
230 MHz
|
15 dB
|
150 W
|
|
+ 150 C
|
SMD/SMT
|
M174
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD55003L-E
- STMicroelectronics
-
1:
¥63.6077
-
1,092库存量
-
6,000在途量
|
Mouser 零件编号
511-PD55003L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
1,092库存量
6,000在途量
在途量:
3,000 预期 2026/3/30
3,000 预期 2026/7/13
|
|
|
¥63.6077
|
|
|
¥45.6633
|
|
|
¥39.7873
|
|
|
¥39.0415
|
|
|
¥39.0415
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerFLAT (5x5)
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003TR-E
- STMicroelectronics
-
1:
¥73.0432
-
389库存量
|
Mouser 零件编号
511-PD55003TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
389库存量
|
|
|
¥73.0432
|
|
|
¥52.6919
|
|
|
¥46.0701
|
|
|
¥45.4938
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55008TR-E
- STMicroelectronics
-
1:
¥126.221
-
682库存量
|
Mouser 零件编号
511-PD55008TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
682库存量
|
|
|
¥126.221
|
|
|
¥93.3041
|
|
|
¥82.9646
|
|
|
¥82.9646
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥188.5066
-
167库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
167库存量
|
|
|
¥188.5066
|
|
|
¥136.1537
|
|
|
¥128.707
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD57018-E
- STMicroelectronics
-
1:
¥231.8534
-
580库存量
|
Mouser 零件编号
511-PD57018-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
580库存量
|
|
|
¥231.8534
|
|
|
¥180.8226
|
|
|
¥177.2631
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
65 V
|
760 mOhms
|
1 GHz
|
16.5 dB
|
18 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD57030-E
- STMicroelectronics
-
1:
¥404.3931
-
234库存量
-
400预期 2026/6/29
|
Mouser 零件编号
511-PD57030-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
234库存量
400预期 2026/6/29
|
|
|
¥404.3931
|
|
|
¥302.7383
|
|
|
¥294.9639
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
1 GHz
|
14 dB
|
30 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
