MACOM X 波段氮化镓高电子迁移率晶体管和单片微波集成电路

Wolfspeed/Cree X 波段氮化镓高电子迁移率晶体管和单片微波集成电路具有宽带隙，与基于砷化镓的器件相比，击穿场强增加了五倍，功率密度增加了 10 到 20 倍。对于相同的工作电源，Cree 氮化镓元件的尺寸更小、电容更低。这意味着放大器可以在更宽的带宽范围内工作，同时具有良好的输入和输出匹配。考虑到氮化镓高电子迁移率晶体管和单片微波集成电路的显著优势，X 波段功率放大器逐渐不再采用低效的 GaAs pHEMT 和不可靠的行波管。

MACOM GaN HEMTs and MMICs feature a wide bandgap that increases the breakdown field by 5x and the power density by a factor of 10 to 20 compared to GaAs-based devices. The GaN components are smaller and have a lower capacitance for the same operating power. They can operate over a wider bandwidth while exhibiting good input and output matching. Typical applications include weather, defense and commercial-based systems, air traffic control, and fire control.

特性

MMICs
- Multi-stage
- Variety of power levels
- High gain
- High efficiency

IM-FETs
- 50Ω building blocks in support of higher power systems
- Highly accurate modeling support
- Maximum flexibility to optimize amplifier design