新款分立半导体

Bourns CDSOT23-SM712-Q Surface Mount TVS Diode provides protection for data ports that meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and IEC 61000-4-5 (surge) requirements. This diode is AEC-Q101 compliant and offers a working peak voltage of 7V to 12V, 30kV maximum ESD protection, and a 400W peak pulse power rating. The SOT23 packaged device mounts directly on the industry-standard SOT23 footprint, and this diode conforms to JEDEC standards, making it easy to handle with standard pick-and-place equipment. Bourns CDSOT23-SM712-Q Surface Mount TVS Diode is suitable for wireless systems, network protection, portable electronics, and RS-485 port protection.
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Bourns CDSOT23-SM712-Q Surface Mount TVS DiodeProvides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.2026/5/12 -
Littelfuse TP1KSMB-FL FlatSuppressX™ TVS二极管专为保护敏感的 电子设备免受电压瞬变影响而设计。2026/5/4 -
Littelfuse TP5.0SMD-FL FlatSuppressX™ TVS二极管使用10/1000µs波形提供5000W峰值脉冲功率能力,耗散功率为6.5W。2026/5/4 -
Littelfuse AK-FL TVS二极管轴向引线式、FlatSuppressX™扁平低钳位双向TVS二极管。2026/5/4 -
RECOM Power ICs, Transformers, & Discrete SolutionsFeatures components ideal for energy, industrial, and medical applications.2026/4/24 -
Littelfuse QVx35xHx高温交变型三端双向可控硅提供35A额定电流,并可提供TO-220AB、TO-220隔离和TO-263封装。2026/4/24 -
Littelfuse SJx08x高温SCR电压最高可达800V,浪涌电流能力最高可达100A,以及额定温度为+150°C。2026/4/24 -
Diotec Semiconductor BAS70-05W Schottky DiodeDesigned for high‑speed switching and voltage clamping in space‑constrained applications.2026/4/16 -
onsemi NVBYST0D8N08X单N沟道功率MOSFET针对高压运行进行了优化,并可承受快速开关及大电流应力。2026/4/14 -
ROHM Semiconductor 高密度SiC功率模块TRCDRIVE pack™、DOT-247及HSDIP20封装有助于实现高效能电源转换。2026/4/10 -
Vishay S07x-M 标准恢复型高压整流器玻璃钝化表面贴装整流器,最大VRRM在100V和1000V 之间。2026/4/7 -
Vishay RS07x快速恢复型整流器玻璃钝化表面贴装整流器,最大重复峰值电压 (VRRM) 为100V至800V。2026/4/7 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.2026/4/7 -
onsemi NTMFD0D9N02P1E MOSFET一款双N沟道MOSFET,采用低Rg设计,适用于快速开关应用。2026/4/6 -
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS DiodesAEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.2026/4/2 -
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor DiodesHigh-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.2026/4/2 -
Vishay VS-HOT200C080 200A 80V功率MOSFET模块相较于标准分立式解决方案,该设备能够减少高达15%的电路板空间占位需求。2026/4/2 -
Toshiba N沟道/P沟道功率MOSFET适用于高速开关、电源管理开关、DC-DC转换器和电机驱动器。2026/3/31 -
STMicroelectronics STL059N4S8AG功率MOSFET一款采用Smart STripFET F8技术设计的40V N沟道增强模式功率MOSFET。2026/3/31 -
Infineon Technologies 多用途ESD保护二极管该系列二极管采用小巧封装,可提供卓越保护,具备出色的ESD性能。2026/3/27 -
Infineon Technologies OptiMOS™ 6 60V功率MOSFET凭借强大的功率MOSFET技术,为OptiMOS 5提供卓越的性能。2026/3/27 -
Infineon Technologies N沟道OptiMOS™ 7 25V功率MOSFET性能针对应用而优化,可为数据中心、服务器及人工智能提供最佳性能。2026/3/27 -
RECOM Power RVS002 Micropower Isolated Power Bridge RectifiersCompact and ideal for micro-power isolated power supply applications with limited space.2026/3/24 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.2026/3/24 -
Renesas Electronics TP65B110HRU双向开关(BDS)一款650V、110mΩ常关型氮化镓(GaN)双向开关(BDS),采用紧凑型TOLT封装。2026/3/20 -
