SemiQ SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.

The SemiQ SiC MOSFET Modules have enhanced performance with powerful SiC chipsets and minimized parasitic package elements. The SiC MOSFET Modules are ideal for applications in solar inverters, power supplies, motor drives, and charging stations.

Features

  • Low switching losses
  • Low junction to case thermal resistance
  • Very rugged and easy to mount
  • Direct mounting to the heatsink (isolated package)
  • High-frequency operation with ultra-low loss
  • Zero reverse recovery current from SiC SBDs
  • Small turn-off tail current from SiC MOSFETs
  • Low stray inductance
  • Normally-off device operation

Applications

  • Photo voltaic inverter
  • Aerospace actuators
  • Server power supplies
  • High voltage AC/DC converter
  • Motor drivers

Typical Application

SemiQ SiC MOSFET Power Modules
View Results ( 6 ) Page
物料编号 数据表 描述
GCMS080B120S1-E1 GCMS080B120S1-E1 数据表 分立半导体模块 SiC 1200V 80mO MOSFET & 10A SBD SOT-227
GCMX040B120S1-E1 GCMX040B120S1-E1 数据表 MOSFET模块 1200V SiC MOSFET Power Module
GCMX080B120S1-E1 GCMX080B120S1-E1 数据表 MOSFET模块 SiC 1200V 80mO MOSFET SOT-227
GCMS040B120S1-E1 GCMS040B120S1-E1 数据表 MOSFET模块 1200V SiC COPACK Power Module
GCMX020B120S1-E1 GCMX020B120S1-E1 数据表 MOSFET模块 SiC 1200V 20mohm MOSFET SOT-227
GCMS020B120S1-E1 GCMS020B120S1-E1 数据表 分立半导体模块 SiC 1200V 20mohm MOSFET & 50A SBD SOT-227
发布日期: 2020-08-31 | 更新日期: 2025-08-01