STMicroelectronics STH315N10F7 STripFET VII DeepGATE 功率 MOSFET
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ 功率 MOSFET 是 AEC-Q101 汽车级 N 沟道功率 MOSFET，它具有同类最佳的导通状态电阻以及很低的内部电容和栅极电荷，从而提高了传导和开关效率。这些器件采用 TO-220 或 2 引脚或 6 引脚 H2PAK 行业标准封装，可帮助设计人员减小电路板尺寸，提高功率密度。STH315N10F7 MOSFET 还具有很高的雪崩耐受性，可承受可能的破坏性条件。这些 STripFET VII DeepGATE MOSFET 有 100V 的额定电压，提供充足的安全裕量，可承受典型的过压浪涌。STH315N10F7 STripFET VII DeepGATE MOSFET 还非常适合于需要高耐受性能的汽车和开关应用。
Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, the STMicroelectronics STH315N10F7 STripFET VII DeepGATE Power MOSFETs help designers reduce board size and maximize power density.
特性
- AEC-Q101 qualified
- Ultra-low RDS(on)
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Available in TO-220 or 2-lead or 6-lead H2PAK packages
应用
- Switching applications
规范
- 2.3mΩ maximum drain-source on-resistance (RDS(on))
- 100V drain-source voltage (VDS)
- ±20V gate-source voltage (VGS)
- 180A continuous drain current (ID)
- 720A pulsed drain current (IDM)
- 315W total dissipation at TC = +25°C (PTOT)
- 2.1W/°C derating factor
- 1J single pulse avalanche energy (EAS)
- -55°C to +175°C operating junction and storage temperature range (Tj, Tstg)
视频
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| 物料编号 | 数据表 | 封装 / 箱体 | 安装风格 |
|---|---|---|---|
| STH315N10F7-6 |  |
TO-263-7 | SMD/SMT |
| STH315N10F7-2 | |
H2PAK-2 | SMD/SMT |
| STP315N10F7 | |
TO-220-3 | Through Hole |
发布日期: 2014-07-10
| 更新日期: 2022-03-11