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Nexperia GANB1R2-040QBA和GANB012-040CBA GaN HEMT
07/03/2025
07/03/2025
40V、1.2mΩ 或12mΩ 、双向氮化镓 (GaN) 高电子迁移率晶体管 (HEMT)。
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ROHM Semiconductor RGA50TxX2EHR Automotive Field Stop Trench IGBTs
10/22/2026
10/22/2026
These devices feature low switching and conduction losses.
ROHM Semiconductor RGA50TxX2HR Automotive Field Stop Trench IGBTs
10/22/2026
10/22/2026
These devices feature low switching and conduction losses.
Diodes Incorporated DMN2005K N-Ch E-Mode Field-Effect Transistor
10/19/2026
10/19/2026
Features low on-resistance, a very low gate threshold voltage, and fast switching performance.
Qorvo QPD2562L GaN射频功率晶体管
10/06/2026
10/06/2026
该器件是一款200W至300W分立GaN-on-SiC HEMT,工作频率范围为2.5GHz至2.9GHz和2.9GHz至3.3GHz。
Infineon Technologies HybridPACK™ HD CoolSiC™ MOSFET模块
10/02/2026
10/02/2026
适用于电动商用车牵引逆变器的1400V CoolSiC MOSFET模块。
MACOM MLP7102-0503 PIN Diode
09/14/2026
09/14/2026
Designed for use in passive or active limiters from 100MHz to beyond 20GHz frequency range.
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