最新分立半导体

IXYS IXSH65N120L3KHV SiC MOSFET
IXYS IXSH65N120L3KHV SiC MOSFET
09/02/2026
适用于工业开关电源的1200V、35mΩ和67A SiC MOSFET。
IXYS IXSH100N120L3KHV SiC MOSFET
IXYS IXSH100N120L3KHV SiC MOSFET
09/02/2026
1200V、21mΩ和102A SiC MOSFET,推荐用于工业开关电源。
IXYS IXSH50N120L3KHV SiC MOSFET
IXYS IXSH50N120L3KHV SiC MOSFET
09/02/2026
1200V、55mΩ和48.3A SiC MOSFET,推荐用于工业开关电源。
IXYS IXSH150N120L3KHV SiC MOSFET
IXYS IXSH150N120L3KHV SiC MOSFET
09/02/2026
1200V、13.5mΩ和147A SiC MOSFET,推荐用于工业开关电源。
IXYS IXSH110N120L3KHV SiC MOSFET
IXYS IXSH110N120L3KHV SiC MOSFET
09/02/2026
1200V、18mΩ和112A SiC MOSFET,推荐用于工业开关电源。
Microchip Technology HV-D3 mSiC® Power Modules
Microchip Technology HV-D3 mSiC® Power Modules
09/01/2026
Simplifies and accelerates adoption of SSTs in data centers & other high-voltage power applications.
IXYS SK002xSx敏感型SCR
IXYS SK002xSx敏感型SCR
08/27/2026
具有微处理器驱动支持和高抗噪的敏感型SCR。
onsemi 80V单N沟道功率MOSFET
onsemi 80V单N沟道功率MOSFET
08/25/2026
具有低RDS(on),可最大限度降低导通损耗,同时具备低QG和低电容,可最大限度减少驱动器损耗。
onsemi NXH011F120M3F2碳化硅MOSFET
onsemi NXH011F120M3F2碳化硅MOSFET
08/25/2026
全桥EliteSiC MOSFET模块,导通电阻为11mΩ,额定电压为1200V。
STMicroelectronics STGI15C60S三相逆变器和IGBT SLLIMM
STMicroelectronics STGI15C60S三相逆变器和IGBT SLLIMM
08/19/2026
该器件非常适用于工作频率高达20kHz的硬开关电路的电机驱动。
Diotec Semiconductor BAS40-06-AQ SMD Small Signal Schottky Diode
Diotec Semiconductor BAS40-06-AQ SMD Small Signal Schottky Diode
08/17/2026
Offers a very high switching speed, low leakage current, and a low junction capacitance.
Diotec Semiconductor ESD9BL24P-AQ ESD Protection Diode
Diotec Semiconductor ESD9BL24P-AQ ESD Protection Diode
08/17/2026
Features a low junction capacitance and low leakage current in a miniature case outline.
Diotec Semiconductor P6KE47CA-AQ Transient Voltage Suppressor Diode
Diotec Semiconductor P6KE47CA-AQ Transient Voltage Suppressor Diode
08/14/2026
Provide reliable protection against transient voltage spikes, ESD, and other overvoltage events.
Diotec Semiconductor ESD3B36WS-AQ ESD Protection Diode
Diotec Semiconductor ESD3B36WS-AQ ESD Protection Diode
08/14/2026
Features high peak-pulse power and bidirectional clamping.
Diotec Semiconductor SKL12-AQ SMD Schottky Barrier Rectifier Diode
Diotec Semiconductor SKL12-AQ SMD Schottky Barrier Rectifier Diode
08/14/2026
Features a low forward voltage drop in a low-profile package.
Nexperia 400V/650V DPAK回流整流器
Nexperia 400V/650V DPAK回流整流器
08/12/2026
适用于高压电源转换的超快和特快DPAK回流整流器。
iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
08/12/2026
Automotive 200V N-channel MOSFET with SuperQ technology and TO-220 packaging.
STMicroelectronics SGT1D5R10MEA PowerGaN晶体管
STMicroelectronics SGT1D5R10MEA PowerGaN晶体管
08/11/2026
具有极低的导通损耗、大电流能力和超快的开关操作速度。
STMicroelectronics STH4N150-2AG N沟道功率MOSFET
STMicroelectronics STH4N150-2AG N沟道功率MOSFET
08/10/2026
专为确保汽车应用的高电压和可靠性而设计。
STMicroelectronics SGT3D5R10MEB PowerGaN晶体管
STMicroelectronics SGT3D5R10MEB PowerGaN晶体管
08/10/2026
设计用于高效大功率开关应用。
Texas Instruments ESD2CANFD24W-Q1 ESD 保护二极管
Texas Instruments ESD2CANFD24W-Q1 ESD 保护二极管
08/04/2026
用于CAN、CAN FD、CAN SIC和CAN XL网络的汽车级ESD保护二极管。
onsemi EMD4DXV6数字晶体管(BRT)
onsemi EMD4DXV6数字晶体管(BRT)
07/30/2026
设计用于替代单个设备及其外部电阻偏置网络。
onsemi NVNJWS1K6N061L N 沟道 MOSFET
onsemi NVNJWS1K6N061L N 沟道 MOSFET
07/30/2026
具有低RDS(on)和低栅极阈值,且集成ESD保护。
ROHM Semiconductor 600V超接合点(SJ)MOSFET
ROHM Semiconductor 600V超接合点(SJ)MOSFET
07/21/2026
紧凑、扁平封装选项,提供出色的散热性能。
IXYS DK010S3ARP 1000V 10A整流器
IXYS DK010S3ARP 1000V 10A整流器
07/20/2026
该整流器采用玻璃钝化结,稳定性更强,采用DO-214AB封装组装。
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