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STMicroelectronics STL059N4S8AG功率MOSFET
STMicroelectronics STL059N4S8AG功率MOSFET
03/31/2026
一款采用Smart STripFET F8技术设计的40V N沟道增强模式功率MOSFET。
STMicroelectronics N沟道MDmesh K6功率MOSFET
STMicroelectronics N沟道MDmesh K6功率MOSFET
07/22/2024
该模块的击穿电压为800V，齐纳保护，100%雪崩测试，非常适用于反激式转换器和LED灯。
STMicroelectronics STripFET F8N通道功率MOSFET
STMicroelectronics STripFET F8N通道功率MOSFET
12/01/2023
符合AEC-Q101标准，提供30V至150V的全面封装解决方案
STMicroelectronics STP80N1K1K6 N沟道功率MOSFET
STMicroelectronics STP80N1K1K6 N沟道功率MOSFET
10/01/2023
采用MDmesh K6技术，利用了20年的超级结技术经验。
STMicroelectronics SH63N65DM6AG功率MOSFET
STMicroelectronics SH63N65DM6AG功率MOSFET
08/18/2023
汽车级N通道MDmesh DM6半桥拓扑功率MOSFET具有650V阻断电压。
STMicroelectronics STL120N10F8 100V N沟道STripFET MOSFET
STMicroelectronics STL120N10F8 100V N沟道STripFET MOSFET
05/08/2023
该器件采用ST的STripFET F8技术，具有增强型沟道栅极结构。
STMicroelectronics STD80N450K6 800V 10A MDmesh K6功率MOSFET
STMicroelectronics STD80N450K6 800V 10A MDmesh K6功率MOSFET
01/25/2023
高电压N通道功率MOSFET，具有齐纳保护功能以及100%通过雪崩测试。
STMicroelectronics STP80N450K6 800V N沟道功率MOSFET
STMicroelectronics STP80N450K6 800V N沟道功率MOSFET
10/19/2022
采用终极MDmesh K6技术设计的高压N沟道功率MOSFET。
STMicroelectronics STL325N4LF8AG N通道功率MOSFET
STMicroelectronics STL325N4LF8AG N通道功率MOSFET
06/24/2022
采用STripFET F8技术，具有增强型沟槽栅极结构。
STMicroelectronics STL320N4LF8 N沟道STripFET F8功率MOSFET
STMicroelectronics STL320N4LF8 N沟道STripFET F8功率MOSFET
06/21/2022
采用STripFET F8沟槽式MOSFET技术制造而成。
STMicroelectronics STP60N043DM9 MDmesh DM9功率MOSFET
STMicroelectronics STP60N043DM9 MDmesh DM9功率MOSFET
05/27/2022
适用于中/高压，具有非常低的单位面积RDS(on)，联接有快速恢复二极管。
STMicroelectronics STP65N045M9 MDmesh M9功率MOSFET
STMicroelectronics STP65N045M9 MDmesh M9功率MOSFET
05/25/2022
设计用于中/高压MOSFET，具有非常低的单位面积RDS(on)。
STMicroelectronics STD80N240K6 800V 16A MDmesh K6功率MOSFET
STMicroelectronics STD80N240K6 800V 16A MDmesh K6功率MOSFET
05/04/2022
具有出色的RDS(on) x 面积和低Qg，可实现高开关速度和低损耗。
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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04/14/2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
onsemi NTMFD0D9N02P1E MOSFET
04/06/2026
一款双N沟道MOSFET，采用低Rg设计，适用于快速开关应用。
STMicroelectronics STL059N4S8AG功率MOSFET
STMicroelectronics STL059N4S8AG功率MOSFET
03/31/2026
一款采用Smart STripFET F8技术设计的40V N沟道增强模式功率MOSFET。
Toshiba N沟道/P沟道功率MOSFET
Toshiba N沟道/P沟道功率MOSFET
03/31/2026
适用于高速开关、电源管理开关、DC-DC转换器和电机驱动器。   
Infineon Technologies OptiMOS™ 6 60V功率MOSFET
Infineon Technologies OptiMOS™ 6 60V功率MOSFET
03/27/2026
凭借强大的功率MOSFET技术，为OptiMOS 5提供卓越的性能。 
Infineon Technologies N沟道OptiMOS™ 7 25V功率MOSFET
Infineon Technologies N沟道OptiMOS™ 7 25V功率MOSFET
03/27/2026
性能针对应用而优化，可为数据中心、服务器及人工智能提供最佳性能。
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03/24/2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Infineon Technologies OptiMOS™ 8功率MOSFET
Infineon Technologies OptiMOS™ 8功率MOSFET
03/17/2026
该系列为N沟道标准电平80V或100VMOSFET，具有极低的导通电阻（RDS(ON)）。
onsemi NVMFD5873NL双N沟道功率MOSFET
onsemi NVMFD5873NL双N沟道功率MOSFET
03/13/2026
专为紧凑高效的设计打造，兼具卓越的热性能。
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET
Infineon Technologies N沟道OptiMOS™ 7 80V功率MOSFET
03/05/2026
80V N沟道标准电平设备，热阻优异，PG‑TDSON‑8封装。
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs
02/19/2026
Features low switching losses, QSW, and EOSS, suitable for high-efficiency SMPS and motor drives.
IXYS X4级功率MOSFET
IXYS X4级功率MOSFET
02/02/2026
导通电阻和导通损耗低，效率更高。
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET
onsemi NVBYST0D6N08X 80V N沟道功率MOSFET
12/26/2025
该器件具有低QRR和软恢复体二极管，采用TCPAK1012 (TopCool) 封装。
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
Infineon Technologies OptiMOS™ 6 80V功率MOSFET
12/23/2025
凭借广泛的产品组合确立了行业性能基准。
onsemi NVMFD5877NL双N沟道MOSFET
onsemi NVMFD5877NL双N沟道MOSFET
12/19/2025
专为紧凑高效的设计而打造，具有优异的热性能。
onsemi NTTFS007P02P8 P沟道低/中压MOSFET
onsemi NTTFS007P02P8 P沟道低/中压MOSFET
11/25/2025
采用PowerTrench技术打造，具备极低RDS(on)、快速开关性能及耐用性。
onsemi FDC642P-F085小信号MOSFET
onsemi FDC642P-F085小信号MOSFET
11/25/2025
采用高性能沟槽技术，具备极低RDS(on)和快速开关速度。
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFET
11/24/2025
Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.
onsemi NVD5867NL单N沟道功率MOSFET
onsemi NVD5867NL单N沟道功率MOSFET
11/20/2025
具有60V漏源电压、39mΩ漏源导通电阻，并通过AEC-Q101认证。
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