|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174 MATCHED PAIR
Microchip Technology VRF161MP
- VRF161MP
- Microchip Technology
-
10:
¥1,361.1754
-
无库存交货期 22 周
|
Mouser 零件编号
494-VRF161MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 200 W 175 MHz M174 MATCHED PAIR
|
|
无库存交货期 22 周
|
|
最低: 10
倍数: 1
|
|
|
N-Channel
|
Si
|
20 A
|
180 V
|
|
150 MHz
|
24 dB
|
200 W
|
- 65 C
|
+ 150 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177 MATCHED PAIR
Microchip Technology VRF2944MP
- VRF2944MP
- Microchip Technology
-
10:
¥3,298.8768
-
无库存交货期 30 周
|
Mouser 零件编号
494-VRF2944MP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 170 V 400 W 150 MHz M177 MATCHED PAIR
|
|
无库存交货期 30 周
|
|
最低: 10
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
STMicroelectronics RF2L24280CB4
- RF2L24280CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF2L24280CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L10700CB4
- RF4L10700CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF4L10700CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L15400CB4
- RF4L15400CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF4L15400CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
STMicroelectronics RF5L0912750CB4
- RF5L0912750CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L0912750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
STMicroelectronics RF5L10111K0CB4
- RF5L10111K0CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L10111K0CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
STMicroelectronics RF5L1214750CB4
- RF5L1214750CB4
- STMicroelectronics
-
100:
¥1,718.1763
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L1214750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
STMicroelectronics RF5L15030CB2
- RF5L15030CB2
- STMicroelectronics
-
180:
¥429.5469
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L15030CB2
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低: 180
倍数: 180
:
180
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
STMicroelectronics SD2931-15W
- SD2931-15W
- STMicroelectronics
-
1:
¥727.155
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD2931-15W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
|
|
无库存交货期 28 周
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
STMicroelectronics SD2933-03W
- SD2933-03W
- STMicroelectronics
-
50:
¥1,183.8332
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD2933-03W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
|
|
无库存交货期 28 周
|
|
最低: 50
倍数: 50
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
STMicroelectronics STAC1011-500
- STAC1011-500
- STMicroelectronics
-
80:
¥1,242.7288
-
无库存交货期 28 周
|
Mouser 零件编号
511-STAC1011-500
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
|
|
无库存交货期 28 周
|
|
最低: 80
倍数: 80
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 1000 V 2000 W 30 MHz T4
Microchip Technology DRF1311
- DRF1311
- Microchip Technology
-
1:
¥3,417.1652
-
无库存交货期 26 周
|
Mouser 零件编号
579-DRF1311
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) Push-Pull Hybrid 1000 V 2000 W 30 MHz T4
|
|
无库存交货期 26 周
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 130 V 150 W 175 MHz M208
Microchip Technology VRF152G
- VRF152G
- Microchip Technology
-
1:
¥1,444.14
-
无库存交货期 22 周
|
Mouser 零件编号
579-VRF152G
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 130 V 150 W 175 MHz M208
|
|
无库存交货期 22 周
|
|
|
¥1,444.14
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 130 V 150 W 175 MHz M208 MATCHED PAIR
Microchip Technology VRF152GMP
- VRF152GMP
- Microchip Technology
-
1:
¥2,945.8422
-
无库存交货期 22 周
|
Mouser 零件编号
579-VRF152GMP
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 130 V 150 W 175 MHz M208 MATCHED PAIR
|
|
无库存交货期 22 周
|
|
最低: 1
倍数: 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT05MP075N-54M
NXP Semiconductors AFT05MP075N-54M
- AFT05MP075N-54M
- NXP Semiconductors
-
1:
¥7,435.3435
-
无库存交货期 53 周
|
Mouser 零件编号
771-AFT05MP075N54M
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT05MP075N-54M
|
|
无库存交货期 53 周
|
|
|
¥7,435.3435
|
|
|
¥6,939.7933
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
136 MHz to 520 MHz
|
18.5 dB
|
70 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT05MS004-200M
NXP Semiconductors AFT05MS004-200M
- AFT05MS004-200M
- NXP Semiconductors
-
1:
¥3,393.4239
-
无库存交货期 53 周
|
Mouser 零件编号
771-AFT05MS004200M
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT05MS004-200M
|
|
无库存交货期 53 周
|
|
|
¥3,393.4239
|
|
|
¥3,009.4612
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
4 A
|
30 V
|
|
136 MHz to 941 MHz
|
20.9 dB
|
4.9 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
SOT-89-3
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT27S006N-1000M
NXP Semiconductors AFT27S006N-1000M
- AFT27S006N-1000M
- NXP Semiconductors
-
1:
¥8,408.1605
-
无库存交货期 53 周
|
Mouser 零件编号
771-AFT27S006N1000M
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AFT27S006N-1000M
|
|
无库存交货期 53 周
|
|
最低: 1
倍数: 1
|
|
|
N-Channel
|
Si
|
|
65 V
|
|
728 MHz to 3.7 GHz
|
16 dB
|
28.8 dBm
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5W
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,15W,12V,2-175MHz
MACOM DU1215S
- DU1215S
- MACOM
-
100:
¥804.1645
-
无库存交货期 22 周
|
Mouser 零件编号
937-DU1215S
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,15W,12V,2-175MHz
|
|
无库存交货期 22 周
|
|
最低: 100
倍数: 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,2-175 MHz
MACOM DU2805S
- DU2805S
- MACOM
-
120:
¥678.2712
-
无库存交货期 28 周
|
Mouser 零件编号
937-DU2805S
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,2-175 MHz
|
|
无库存交货期 28 周
|
|
最低: 120
倍数: 120
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,200W,28V,2-175MHz
MACOM DU28200M
- DU28200M
- MACOM
-
20:
¥5,193.4122
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU28200M
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,200W,28V,2-175MHz
|
|
无库存交货期 26 周
|
|
最低: 20
倍数: 20
|
|
|
N-Channel
|
Si
|
20 A
|
65 V
|
|
175 MHz
|
13 dB
|
200 W
|
|
+ 200 C
|
Screw Mount
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,40W,28V,2-175MHz
MACOM DU2840S
- DU2840S
- MACOM
-
120:
¥1,207.3259
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU2840S
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,40W,28V,2-175MHz
|
|
无库存交货期 26 周
|
|
最低: 120
倍数: 120
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,80W,28V,2-175MHz
MACOM DU2880T
- DU2880T
- MACOM
-
60:
¥1,793.6151
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU2880T
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,80W,28V,2-175MHz
|
|
无库存交货期 26 周
|
|
最低: 60
倍数: 60
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,RF,80W,28V,2-175_MHz
MACOM DU2880U
- DU2880U
- MACOM
-
60:
¥1,767.0601
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU2880U
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,RF,80W,28V,2-175_MHz
|
|
无库存交货期 26 周
|
|
最低: 60
倍数: 60
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,500-1000_MHz
MACOM LF2805A
- LF2805A
- MACOM
-
80:
¥1,233.1351
-
无库存交货期 26 周
|
Mouser 零件编号
937-LF2805A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,5W,28V,500-1000_MHz
|
|
无库存交货期 26 周
|
|
最低: 80
倍数: 80
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|