|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
¥228.8702
-
714库存量
|
Mouser 零件编号
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714库存量
|
|
|
¥228.8702
|
|
|
¥173.1273
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
¥160.7199
-
47库存量
-
600预期 2026/4/20
|
Mouser 零件编号
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
47库存量
600预期 2026/4/20
|
|
|
¥160.7199
|
|
|
¥150.9567
|
|
|
¥144.2558
|
|
|
¥142.7642
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥73.45
-
592库存量
|
Mouser 零件编号
511-SCT1000N170
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592库存量
|
|
|
¥73.45
|
|
|
¥50.2963
|
|
|
¥37.1431
|
|
|
¥32.5892
|
|
|
¥32.5101
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥131.5207
-
510库存量
|
Mouser 零件编号
511-SCT20N120AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510库存量
|
|
|
¥131.5207
|
|
|
¥97.0218
|
|
|
¥67.574
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥142.267
-
593库存量
|
Mouser 零件编号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593库存量
|
|
|
¥142.267
|
|
|
¥88.253
|
|
|
¥77.0886
|
|
|
¥77.0095
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
¥211.9993
-
317库存量
-
NRND
|
Mouser 零件编号
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317库存量
|
|
|
¥211.9993
|
|
|
¥188.0998
|
|
|
¥186.111
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
¥238.9611
-
151库存量
|
Mouser 零件编号
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151库存量
|
|
|
¥238.9611
|
|
|
¥182.1447
|
|
|
¥168.1666
|
|
|
¥145.2502
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
¥75.936
-
844预期 2026/11/23
|
Mouser 零件编号
511-SCT10N120AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844预期 2026/11/23
|
|
|
¥75.936
|
|
|
¥43.0078
|
|
|
¥34.1599
|
|
|
¥34.0808
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
¥233.5032
-
69预期 2026/5/4
|
Mouser 零件编号
511-SCTWA90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69预期 2026/5/4
|
|
|
¥233.5032
|
|
|
¥151.2844
|
|
|
¥144.753
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
- SCT018W65G3AG
- STMicroelectronics
-
受限供货情况
-
新产品
|
Mouser 零件编号
511-SCT018W65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
|
|
|
|
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
76 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3
- STMicroelectronics
-
受限供货情况
-
新产品
|
Mouser 零件编号
511-SCT040W120G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
|
|
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
-10 V, 22 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
