|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥166.0083
-
252库存量
-
600预期 2026/11/16
-
新产品
|
Mouser 零件编号
511-SCT019HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
252库存量
600预期 2026/11/16
|
|
|
¥166.0083
|
|
|
¥136.5605
|
|
|
¥118.1189
|
|
|
¥118.1189
|
|
最低： 1
倍数： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥93.6318
-
969库存量
|
Mouser 零件编号
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
969库存量
|
|
|
¥93.6318
|
|
|
¥64.9298
|
|
|
¥54.8389
|
|
|
¥44.748
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
¥228.8702
-
714库存量
|
Mouser 零件编号
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714库存量
|
|
|
¥228.8702
|
|
|
¥173.1273
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥132.5151
-
2,329库存量
|
Mouser 零件编号
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,329库存量
|
|
|
¥132.5151
|
|
|
¥93.6318
|
|
|
¥86.106
|
|
|
¥86.0269
|
|
|
查看
|
|
|
¥70.3086
|
|
|
¥85.9365
|
|
|
¥70.3086
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
¥186.8568
-
47库存量
-
600预期 2026/4/20
|
Mouser 零件编号
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
47库存量
600预期 2026/4/20
|
|
|
¥186.8568
|
|
|
¥167.2513
|
|
|
¥144.2558
|
|
|
¥144.1767
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥192.891
-
882库存量
-
新产品
|
Mouser 零件编号
511-SCT016H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
882库存量
|
|
|
¥192.891
|
|
|
¥139.4646
|
|
|
¥139.3742
|
|
|
¥139.216
|
|
|
¥113.7345
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
¥206.8691
-
274库存量
-
600预期 2026/3/9
-
新产品
|
Mouser 零件编号
511-SCT011HU75G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
274库存量
600预期 2026/3/9
|
|
|
¥206.8691
|
|
|
¥152.0302
|
|
|
¥151.9511
|
|
|
¥124.1531
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥171.6357
-
640库存量
-
新产品
|
Mouser 零件编号
511-SCT012W90G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640库存量
|
|
|
¥171.6357
|
|
|
¥146.3237
|
|
|
¥126.56
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥169.6469
-
739库存量
-
新产品
|
Mouser 零件编号
511-SCT020HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
739库存量
|
|
|
¥169.6469
|
|
|
¥140.5381
|
|
|
¥121.5089
|
|
|
¥112.7401
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥157.9853
-
513库存量
-
新产品
|
Mouser 零件编号
511-SCT020W120G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513库存量
|
|
|
¥157.9853
|
|
|
¥130.3568
|
|
|
¥129.2833
|
|
|
¥127.0572
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥149.3069
-
502库存量
-
新产品
|
Mouser 零件编号
511-SCT025W120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502库存量
|
|
|
¥149.3069
|
|
|
¥119.5201
|
|
|
¥103.3159
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥104.3894
-
1,082库存量
-
新产品
|
Mouser 零件编号
511-SCT027H65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,082库存量
|
|
|
¥104.3894
|
|
|
¥73.45
|
|
|
¥63.8563
|
|
|
¥54.0931
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥111.7457
-
1,011库存量
-
600预期 2026/12/14
-
新产品
|
Mouser 零件编号
511-SCT040HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
1,011库存量
600预期 2026/12/14
|
|
|
¥111.7457
|
|
|
¥78.2525
|
|
|
¥68.9865
|
|
|
¥67.6644
|
|
|
¥58.4775
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥89.6655
-
547库存量
-
新产品
|
Mouser 零件编号
511-SCT040W65G3-4
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
547库存量
|
|
|
¥89.6655
|
|
|
¥53.5959
|
|
|
¥50.9517
|
|
|
¥42.4315
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥103.5645
-
641库存量
-
新产品
|
Mouser 零件编号
511-SCT040W65G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
641库存量
|
|
|
¥103.5645
|
|
|
¥84.2867
|
|
|
¥70.2295
|
|
|
¥62.6133
|
|
|
¥53.0987
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥70.3086
-
1,779库存量
-
新产品
|
Mouser 零件编号
511-SCT055TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,779库存量
|
|
|
¥70.3086
|
|
|
¥51.2003
|
|
|
¥42.6801
|
|
|
¥37.968
|
|
|
¥33.8322
|
|
|
¥33.7531
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
¥141.9393
-
14库存量
-
2,000预期 2026/10/12
-
新产品
|
Mouser 零件编号
511-SCT025H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
14库存量
2,000预期 2026/10/12
|
|
|
¥141.9393
|
|
|
¥100.7508
|
|
|
¥94.0499
|
|
|
¥76.7609
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥79.4051
-
37库存量
-
新产品
|
Mouser 零件编号
511-SCT040TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37库存量
|
|
|
¥79.4051
|
|
|
¥55.8333
|
|
|
¥44.3412
|
|
|
¥36.1487
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥169.9859
-
160库存量
|
Mouser 零件编号
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
160库存量
|
|
|
¥169.9859
|
|
|
¥122.0852
|
|
|
¥118.6161
|
|
|
¥96.8636
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥128.0403
-
202库存量
|
Mouser 零件编号
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
202库存量
|
|
|
¥128.0403
|
|
|
¥90.4113
|
|
|
¥82.3883
|
|
|
¥67.2463
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥131.4303
-
532库存量
|
Mouser 零件编号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532库存量
|
|
|
¥131.4303
|
|
|
¥101.7452
|
|
|
¥98.4343
|
|
|
¥95.8692
|
|
|
查看
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥106.785
-
353库存量
|
Mouser 零件编号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
353库存量
|
|
|
¥106.785
|
|
|
¥79.8232
|
|
|
¥68.9865
|
|
|
¥53.3473
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥107.6099
-
698库存量
|
Mouser 零件编号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
698库存量
|
|
|
¥107.6099
|
|
|
¥76.0151
|
|
|
¥57.5735
|
|
|
¥54.3417
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥107.8585
-
629库存量
|
Mouser 零件编号
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
629库存量
|
|
|
¥107.8585
|
|
|
¥75.4388
|
|
|
¥57.0763
|
|
|
¥53.9349
|
|
|
¥53.8445
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥103.9713
-
473库存量
-
1,200预期 2026/4/20
|
Mouser 零件编号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
473库存量
1,200预期 2026/4/20
|
|
|
¥103.9713
|
|
|
¥72.9528
|
|
|
¥66.0937
|
|
|
¥62.2856
|
|
|
¥51.6975
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
