新款存储器 IC

Alliance Memory AS4C512M16D4D/1G8D4D 8Gb DDR4 SDRAMs are high-speed dynamic random-access memory devices internally organized into eight or sixteen banks. These SDRAMs use an 8n-bit prefetch architecture to achieve high-speed operation. The 8n-bit prefetch architecture is combined with an interface that transfers two data words per clock cycle at the I/O pins. The DDR4 SDRAMs offer a data bus write Cyclic Redundancy Check (CRC), read preamble training, control gear-down mode, per-DRAM Addressability (PDA), output driver impedance control, and ODT. The AS4C512M16D4D/1G8D4D 8Gb DDR4 SDRAMs comply with JEDEC standard and RoHS. Typical applications include industrial, medical, networking, IoT, automotive, gaming, 5G designs, enterprise, and computing and server applications.
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Alliance Memory AS4C512M16D4D/1G8D4D 8Gb DDR4 SDRAMsHigh-speed dynamic random-access memory is internally organized with eight banks or sixteen banks.2026/8/10 -
Microchip Technology EV34X05A存储器Xplorer SPI子板用于存储器Xplorer串行电子擦除可编程只读存储器(EEPROM)评估的SPI子板。2026/7/21 -
Microchip Technology 25CSM01 1Mbit SPI串行EEPROM1Mbit SPI EEPROM,带ECC、序列号和增强型写保护。2026/7/21 -
Microchip Technology EV08L40A 子板用于存储器Xplorer串行电子擦除可编程只读存储器评估的单线子板。2026/7/21 -
Kingston LPDDR4x Low-Power DRAMsSupport data rates up to 4266Mb/s and maintain backward compatibility with lower speeds.2026/7/10 -
Texas Instruments TMF00xxEVM 评估模块用于单线FRAM设备测试和存储器管理的USB评估模块。2026/6/30 -
Macronix MX25L3233F MXSMIO® NOR Flash MemoryProvides sequential read operations across the entire chip and multi-I/O features.2026/6/4 -
Mikroe Flash 14 ClickA compact add-on board that supplies reliable non-volatile data storage for embedded systems.2026/4/20 -
STMicroelectronics B-M2MEM-PACK1 M.2串行存储器套件包含五款不同的非易失性串行存储器扩展板。2026/3/23 -
RAMXEED Wide Voltage Range SPI FeRAMsSupports high memory capacity of up to 4Mbit and 1.7V to 3.6V operating voltage range.2026/3/23 -
Infineon Technologies EVAL-CY15B104QSN 评估板该板可将EXCELON™ F-RAM轻松快速地集成到任何开发套件中。2026/3/16 -
Infineon Technologies EVAL-CY15V116QSN 评估板该板可将EXCELON™ F-RAM轻松快速地集成到任何开发套件中。2026/3/16 -
Texas Instruments TMF0008 8 K位串行FRAM具有出厂编程的48位唯一识别号和8位系列代码的非易失性存储器 (NVM) 器件 。2026/1/23 -
STMicroelectronics M24C64X-DRE 64Kb串行I2C总线电子擦除可编程只读存储器工作电源电压范围为1.7V至5.5V,时钟频率高达1MHz。2025/10/3 -
onsemi NV250x0LV低电压汽车级串行EEPROM1Kb、2Kb和4Kb SPI串行EEPROM器件,内部分别组织为128×8、256×8和512×8位。2025/8/25 -
ROHM Semiconductor BR25G-5 SPI总线EEPROM该设备为16Kbit串行EEPROM,带SPI总线接口,写入次数高达400万次。2025/8/19 -
GigaDevice D5F1GM9 High-Speed QSPI NAND FlashFeatures breakthrough read speeds and innovative Bad Block Management (BBM) functionality.2025/7/24 -
STMicroelectronics M24M02E-U 2Mbit I2C兼容电子擦除可编程只读存储器该设备为256K x 8位,电源电压范围为1.6V至5.5V。2025/6/30 -
ISSI IS25LP512MJ & IS25WP512MJ Flash Memory DevicesFeature 80MHz normal read, up to 166MHz fast read, and up to 104MHz Double Transfer Rate (DTR).2025/6/16 -
Macronix e.MMC™ Embedded Flash Memory ModulesCompatible with the JEDEC e.MMC™ 5.1 standard and are ideal for smartphones and digital TVs.2025/6/2 -
onsemi N24C256X 256Kb I2C CMOS串行电子擦除可编程只读存储器该产品采用低功耗CMOS技术,内部组织为32,768字,每字8位。2025/5/22 -
STMicroelectronics M24C64-U 64-Kbit串行I2C总线EEPROM其组织形式为8K × 8位,宽工作电源电压范围为1.7V至5.5V。2025/5/2 -
STMicroelectronics M24128-U 128Kb串行I²C总线电子擦除可编程只读存储器支持标准模式 (100kHz)、快速模式 (400kHz) 和快速模式+ (1MHz) I2C总线模式。2025/4/29 -
RAMXEED MB85RS256B/128B/64/64V/64VY/16/16N FeRAM ChipsSupport a wide range of capacities, from 16Kbit to 256Kbit, with a serial peripheral interface.2025/4/10 -
Microchip Technology 24CS128 128Kbit 3.4MHz I2C串行EEPROM器件采用具有3.4MHz高速模式能力的I2(两线)串行接口。2025/4/10 -
