新款RF晶体管
Ampleon BLF981/BLF981S Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistors are 170W devices designed for high-efficiency broadband applications across a wide frequency range from HF to 1400MHz. These transistors are particularly well-suited for use in broadcast transmitters, industrial, scientific, medical (ISM), avionics, and other non-cellular communication systems. Built to withstand extreme operating conditions, the Ampleon BLF981/BLF981S offers excellent ruggedness, high power gain, and integrated dual-sided ESD protection. The devices are optimized for both analog and digital signal transmission, ensuring reliable performance and easy power control. The BLF981 is housed in a SOT467C package, while the BLF981S comes in a SOT467B package, both supporting robust thermal management and long-term reliability.
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Ampleon BLF981/BLF981S LDMOS Power TransistorsDesigned for high-efficiency broadband applications across a frequency range from HF to 1400MHz.2025/5/15
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Ampleon BLP981 LDMOS Power Transistor170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.2025/5/15 -
Mini-Circuits TAV1 TransistorsDesigned with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.2023/12/1 -
CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.2023/7/9 -
Nexperia SOT23表面贴装封装产品采用塑料、表面贴装、三个端子、1.9mm脚距、2.9mm x 1.3mm x 1mm封装。2022/7/26 -
Nexperia SOT323表面贴装封装产品塑料、3引脚、1.3mm脚距、2mm x 1.25mm x 0.95mm主体表面贴装封装。2022/7/26 -
Qorvo QPD2160D 1600µm 分立式GaAs pHEMT输出功率为32.5dBm（P1dB时），增益为10.4dB，功率附加效率为63%（1dB时）。2022/4/19 -
Qorvo QPD2120D 1200µm分立式GaAs pHEMT输出功率为31dBm（P1dB时），增益为11.5dB，功率附加效率为57%（1dB时）。2022/4/19 -
Qorvo QPD2080D 800µm 分立式GaAs pHEMT输出功率为29.5dBm（P1dB时），增益为11.5dB，功率附加效率为56%（1dB时）。2022/4/19 -
Qorvo QPD2060D 600µm分立式GaAs pHEMT输出功率为28dBm（P1dB时），增益为12dB，功率附加效率为55%（1dB时）。2022/4/19 -
Qorvo QPD2040D 400um分立式GaAs pHEMT裸片采用Qorvo经过验证的标准0.25um功率pHEMT生产工艺设计。2022/2/14 -
Qorvo QPD2018D 180um分立式GaAs pHEMT裸片采用Qorvo经过验证的标准0.25um功率pHEMT生产工艺。2022/2/14 -
Qorvo QPD2025D 250um分立式GaAs pHEMT裸片采用Qorvo经过验证的标准0.25um功率pHEMT生产工艺开发。2022/2/14