新款射频结栅场效应晶体管(RF JFET)晶体管
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.2023/7/9
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Qorvo QPD2160D 1600µm 分立式GaAs pHEMT输出功率为32.5dBm（P1dB时），增益为10.4dB，功率附加效率为63%（1dB时）。2022/4/19 -
Qorvo QPD2120D 1200µm分立式GaAs pHEMT输出功率为31dBm（P1dB时），增益为11.5dB，功率附加效率为57%（1dB时）。2022/4/19 -
Qorvo QPD2080D 800µm 分立式GaAs pHEMT输出功率为29.5dBm（P1dB时），增益为11.5dB，功率附加效率为56%（1dB时）。2022/4/19 -
Qorvo QPD2060D 600µm分立式GaAs pHEMT输出功率为28dBm（P1dB时），增益为12dB，功率附加效率为55%（1dB时）。2022/4/19