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ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™with Molded Modules
03/17/2026
03/17/2026
该器件额定电压为1200V,外形尺寸为41.6mm × 52.5mm ,搭载第四代SiC MOSFET元件。
ROHM Semiconductor RH7G03BBJFRA P沟道功率MOSFET
11/18/2025
11/18/2025
该功率MOSFET的VDSS额定值为-40V,ID额定值(VDS =-10V)为±22A。
ROHM Semiconductor SCT2H12NWB 1700V N沟道SiC功率MOSFET
08/21/2025
08/21/2025
一款额定漏源电压 (VDSS) 为1700V、额定漏极连续电流 (ID) 为3.9A的SiC MOSFET。
ROHM Semiconductor RH7P04BBKFRA 100V N沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,其额定VDSS 为100V,额定ID 为±40A,符合AEC-Q101认证要求。
ROHM Semiconductor RQ3G120BKFRA 40V N沟道功率MOSFET
08/19/2025
08/19/2025
一款车规级MOSFET,额定VDSS 为40V,额定ID 为±12A,符合AEC-Q101认证要求。
ROHM Semiconductor RH7G04 40 V N通道功率MOSFET
08/19/2025
08/19/2025
该设备为车规级MOSFET,额定VDSS 为40V,额定ID为±40A,符合AEC-Q101认证要求。
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Infineon Technologies PSOC™ Control C1 Microcontrollers
08/06/2026
08/06/2026
32-bit control MCUs with Arm® Cortex®-M0 CPU and MATH coprocessor.
Infineon Technologies CoolGaN™ BDS Evaluation Boards
08/06/2026
08/06/2026
Compact daughter boards for evaluating 40V GaN bidirectional switches.
Infineon Technologies EVAL_GD_BDS_GAN Evaluation Board
08/06/2026
08/06/2026
Gate driver evaluation board for CoolGaN™ bidirectional switch designs.
Texas Instruments TRF2001 ISM Band Multiprotocol & Wi-SUN RF FEM
08/04/2026
08/04/2026
A high-performance RF FEM for low-power wireless applications in the sub-1GHz band.
Texas Instruments ESD2CANFD24W-Q1 ESD Protection Diodes
08/04/2026
08/04/2026
Automotive ESD protection diodes for CAN, CAN FD, CAN SIC, and CAN XL networks.
Texas Instruments TPS7H3xx4EVM-CVAL Evaluation Modules
08/04/2026
08/04/2026
Radiation-tolerant supervisor evaluation modules with flexible rail monitoring.
Chip Quik DFN-6 to DIP-6/10 SMT Adapters
08/03/2026
08/03/2026
Constructed using FR-4 material and PCB measures 25.4mm x 7.62mm x 1.6mm.
Chip Quik Extra-Narrow SMT-to-DIP Adapters
07/29/2026
07/29/2026
Designed to replace obsolete DIP ICs with newer surface-mount components.
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