碳化硅MOSFET

 碳化硅MOSFET
SiC MOSFETs are in stock with same-day shipping at Mouser from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more.
More...

Please view our selection of SiC MOSFETs below.
结果: 1,480
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 753库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
ROHM Semiconductor 碳化硅MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529库存量
最低: 1
倍数: 1

Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 861库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

Through Hole TO-247-4 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Diodes Incorporated DMWSH170H850HM4
Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 30库存量
最低: 1
倍数: 1

IXYS IXFN27N120SK
IXYS 碳化硅MOSFET SiCarbide-Discrete MOSFET SOT-227B(mini 14库存量
最低: 1
倍数: 1

SMD/SMT HiPerFET
Microchip Technology 碳化硅MOSFET MOSFET SIC 700 V 35 mOhm TO-268 96库存量
最低: 1
倍数: 1

SMD/SMT D3PAK-3 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package 32库存量
最低: 1
倍数: 1

Through Hole STPAK-4 1 Channel 1.2 kV 239 A 8.5 mOhms - 10 V, + 22 V 4.4 V 304 nC - 55 C + 200 C 994 W AEC-Q100
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 553库存量
1,000预期 2027/8/9
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 840 V 198 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 936库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 64 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C +175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 911库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 50 A 41 mOhms - 7 V,+ 23 V 5.6 V 79 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 1,942库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 42 A 50 mOhms - 7 V,+ 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 578库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 34 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 764库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 29 A 78 mOhms - 7 V, + 23V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 683库存量
750在途量
最低: 1
倍数: 1
: 750

SMD/SMT HD-SOP-22 1 Channel 750 V 53 A 65.6 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 734库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 200库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 172 A 9 mOhms - 11 V, + 25 V 5.6 V 169 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 181库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 167库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 198 A 9 mOhms - 7 V, 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 1,046库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 1,052库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 1,174库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 750 V 34 A 65 mOhms - 7 V, 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 in D2PAK 7pin, Q-DPAK TSC and TO247 4pin automotive and industrial qualified 566库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 in D2PAK 7pin, Q-DPAK TSC and TO247 4pin automotive and industrial qualified 824库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 in D2PAK 7pin, Q-DPAK TSC and TO247 4pin automotive and industrial qualified 1,080库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC