碳化硅MOSFET

 碳化硅MOSFET
SiC MOSFETs are in stock with same-day shipping at Mouser from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more.
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Please view our selection of SiC MOSFETs below.
结果: 1,480
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 188库存量
最低: 1
倍数: 1

Through Hole PG-TO-247-4 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 215库存量
最低: 1
倍数: 1

Through Hole PG-TO-247-4 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 153库存量
480预期 2026/10/18
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 172 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 483 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 474库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 116 A 13.8 mOhms - 7 V, + 23 V 5.6 V 106 nC - 55 C + 175 C 333 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 340库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 431库存量
1,200在途量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 60 A 49 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 476库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 47 A 65.6 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 164 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 338库存量
240在途量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 40 A 80 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 490库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 32 A 104 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 122 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 500库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 28 A 124 mOhms - 7 V, + 23 V 5.6 V 20 nC - 55 C + 175 C 108 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET 168库存量
最低: 1
倍数: 1
: 240

Through Hole PG-TO247-4 1 Channel 1.4 kV 147 A 31.3 Ohms - 10 V to 25 V 4.2 V 130 nC - 55 C + 175 C 568 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 152库存量
最低: 1
倍数: 1

Through Hole TO-247-4 1 Channel 1.4 kV 92 A 53.8 mOhms - 10 V, + 23 V 4.2 V 78 nC - 55 C + 175 C 380 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 342库存量
最低: 1
倍数: 1

Through Hole TO-247-4 1 Channel 1.4 kV 65 A 35 mOhms - 10 V, + 25 V 4.2 V 54 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 478库存量
240预期 2027/8/20
最低: 1
倍数: 1

Through Hole TO-247-4 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC
IXYS 碳化硅MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L 900库存量
最低: 1
倍数: 1
: 800

SMD/SMT TO-263-7L 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS 碳化硅MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL 2,090库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT TOLL-8 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS 碳化硅MOSFET 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L 520库存量
最低: 1
倍数: 1

Through Hole TO-247-4L 1 Channel 650 V 99 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 454 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 12MOHM 650V M3S 423库存量
最低: 1
倍数: 1
最大: 44

Through Hole TO-247-4 1 Channel 650 V 102 A 17 mOhms - 10 V, 22.6 V 4 V 135 nC - 55 C + 175 C 375 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS TO247-4L 16MOHM 650V M3S 381库存量
最低: 1
倍数: 1
最大: 42

Through Hole TO-247-4 1 Channel 650 V 71 A 23.5 mOhms - 10 V, 22.6 V 4 V 100 nC - 55 C + 175 C 300 W Enhancement EliteSiC
onsemi 碳化硅MOSFET T2PAK SIC 650V M3S 12MOHM 710库存量
最低: 1
倍数: 1
最大: 71
: 800

SMD/SMT T2PAK-7 1 Channel 650 V 112 A 16.8 mOhms - 10 V, 22 V 4 V 135 nC - 55 C + 175 C 429 W Enhancement
onsemi 碳化硅MOSFET T2PAK SIC 650V M3S 16MOHM 540库存量
最低: 1
倍数: 1
最大: 54
: 800

SMD/SMT T2PAK-7 1 Channel 650 V 85 A 23.4 mOhms - 8 V, 22 V 4 V 100 nC - 55 C + 175 C 333 W Enhancement


onsemi 碳化硅MOSFET T2PAK SIC 650V M3S 23MOHM 582库存量
最低: 1
倍数: 1
最大: 60
: 800

SMD/SMT T2PAK-7 1 Channel 650 V 72 A 32.6 mOhms - 8 V, 22 V 4 V 74 nC - 55 C + 175 C 288 W Enhancement
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 22MOHM M3S 1200V 640库存量
最低: 1
倍数: 1
最大: 64
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 100 A 30 mOhms - 10 V, 22 V 4.4 V 142 nC - 55 C + 175 C 441 W Enhancement
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 30MOHM M3S 1200V 720库存量
最低: 1
倍数: 1
最大: 72
: 800

SMD/SMT D2PAK-7 1 Channel 1.2 kV 77 A 39 mOhms - 10 V, 22 V 4.4 V 107 nC - 55 C + 175 C 348 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 12MOHM 650V M3S 439库存量
最低: 1
倍数: 1
最大: 44

Through Hole TO-247-4 1 Channel 650 V 102 A 17 mOhms - 10 V, 22.6 V 4 V 135 nC - 55 C + 175 C 375 W Enhancement EliteSiC