Rectron 最新分立半导体
分离式半导体类型
已应用过滤器:
Rectron MMBD120x 100V Small Signal Diodes
03/01/2024
03/01/2024
Fast switching devices with 4ns maximum reverse recovery time available in a SOT-23 package.
Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET
10/10/2022
10/10/2022
Uses trench technology to provide excellent RDS(ON) with a low gate charge.
Rectron RM3134 Dual N-Channel MOSFET
10/10/2022
10/10/2022
Lead-free product housed in a surface mount package.
Rectron RM2312 N-Channel Enhancement Mode Power MOSFET
10/10/2022
10/10/2022
Uses advanced trench technology to provide excellent RDS(ON).
Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET
09/21/2022
09/21/2022
Features advanced Trench technology and design to provide excellent RDS(ON) and a low gate charge.
Rectron RM135N100HD N-Channel Super Trench Power MOSFET
09/21/2022
09/21/2022
Features Super Trench technology optimized for efficient high-frequency switching performance.
查看:6 的 1 - 6
Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs
05/27/2026
05/27/2026
Advanced N‑channel devices engineered for high-efficiency power switching.
Bourns CDSOT23-SM712-Q表面贴装TVS二极管
05/12/2026
05/12/2026
为数据端口提供保护,符合IEC 61000-4-2、IEC 61000-4-4和IEC 61000-4-5标准。
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04/02/2026
04/02/2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04/02/2026
04/02/2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
查看:1204 的 1 - 25
