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SemiQ GEN3 1200V SiC MOSFET电源模块
08/11/2025
08/11/2025
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.
SemiQ GEN3 1200V SiC MOSFET分立器件
01/02/2025
01/02/2025
Developed to increase performance and cut switching losses in high-voltage applications.
SemiQ GP2T020A120H 1200V SiC MOSFET
11/15/2023
11/15/2023
Offers reduced switching losses, higher efficiency, and increased power density.
SemiQ GCMX040B120S1-E1 1200V SiC MOSFET Power Module
03/09/2023
03/09/2023
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module
03/09/2023
03/09/2023
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GP2T080A120H 1200V SiC MOSFET
07/28/2022
07/28/2022
Features high-speed switching, a driver source pin for gate driving, and a reliable body diode.
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onsemi GaNEXUS™ GaN FETs
07/08/2026
07/08/2026
Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.
Bourns CDDFN2 Surface Mount TVS Diodes
07/07/2026
07/07/2026
ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.
Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode
06/29/2026
06/29/2026
Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Bourns CDSOT23-SM712-Q表面贴装TVS二极管
05/12/2026
05/12/2026
符合IEC 61000-4-2、IEC 61000-4-4和IEC 61000-4-5标准，为数据端口提供保护。
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
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