分离式半导体类型
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Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Navitas Semiconductor NV60x GaNFast™ Power FETs
02/26/2026
02/26/2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02/26/2026
02/26/2026
Designed to block voltage in both directions using unique substrate clamp technology.
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor 650V SiC Schottky MPS™ Diodes
09/03/2024
09/03/2024
Combine excellent forward and switching characteristics with best-in-class thermal conductivity.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
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onsemi GaNEXUS™ GaN FETs
07/08/2026
07/08/2026
Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.
Bourns CDDFN2 Surface Mount TVS Diodes
07/07/2026
07/07/2026
ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.
Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode
06/29/2026
06/29/2026
Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Bourns CDSOT23-SM712-Q表面贴装TVS二极管
05/12/2026
05/12/2026
符合IEC 61000-4-2、IEC 61000-4-4和IEC 61000-4-5标准,为数据端口提供保护。
Diotec Semiconductor BAS70-05W Schottky Diode
04/16/2026
04/16/2026
Designed for high‑speed switching and voltage clamping in space‑constrained applications.
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