分离式半导体类型
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
Navitas Semiconductor 650V SiC Schottky MPS™ Diodes
09/03/2024
09/03/2024
Combine excellent forward and switching characteristics with best-in-class thermal conductivity.
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Navitas Semiconductor 4th Generation SiC Schottky MPS™ Diodes
06/08/2022
06/08/2022
Thin Chip Technology for low VF, enhanced surge and avalanche robustness, and a superior FOM.
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TDK-Lambda i1R ORing MOSFET Modules
02/05/2026
02/05/2026
High-efficiency and low-loss power devices designed to replace traditional diodes.
Vishay SE30CLJ Surface-Mount High Voltage Rectifiers
02/03/2026
02/03/2026
Engineered for robust performance in demanding power conversion applications.
Diotec Semiconductor BZX84B3V6 SMD Planar Zener Diode
02/03/2026
02/03/2026
Offers a sharp zener voltage breakdown and a low leakage current.
Vishay High Current Density/Voltage Schottky Rectifiers
02/03/2026
02/03/2026
Delivers robust performance for demanding power‑conversion applications.
Vishay SE40CLJ Surface-Mount High Voltage Rectifiers
02/03/2026
02/03/2026
Designed for demanding power conversion applications
IXYS X4-Class Power MOSFETs
02/02/2026
02/02/2026
Offer low on-state resistance and conduction losses, with improved efficiency.
Qorvo QPD1014A GaN输入匹配晶体管
01/20/2026
01/20/2026
一款输出功率 (P3dB)为15W、输入阻抗匹配为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。
Qorvo QPD1011A GaN输入匹配晶体管
01/19/2026
01/19/2026
一款输出功率(P3dB)为7W、输入阻抗匹配特性为50Ω的分立式GaN-on-SiC HEMT，其工作频率范围为30MHz至1.2GHz。
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETs
11/24/2025
11/24/2025
Designed for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.
Diotec Semiconductor LDP02-26CAYD2-AQ SMD TVS Diode
11/24/2025
11/24/2025
Offers 6600 W peak power, fast response, and ISO-16750-2 load-dump test compliance.
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